Abstract: An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.

Abstract: An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.

Abstract: An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.

Abstract: An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.

Abstract: A sputtering system and magnet array for depositing metal and metal-reactive gas coatings onto a substrate. The magnet array is designed for use in a rotating magnetron. The magnet array includes a plurality of magnets disposed on a plate. The plurality of magnets is arranged such that a closed-loop magnetic path is formed. The shape of the magnetic path is a double-lobe structure that includes first and second lobes that are symmetric to one another about an axis in the plane of the plate that intersects the center of rotation of the plate. The magnets are arranged in several rows. A first row of magnets has a double-lobe structure that corresponds to the first and second lobes of the magnetic path. Second and third rows of magnets are arranged in the shape of rings inside the first and second lobes of the magnetic path magnetic path. The lobe structure of the magnetic path can be circular or elliptical in shape.

Abstract: An improved cross-field diode sputtering target assembly adapted for sputtering a selected material having an ion target wherein a selected surface is formed of a selected material in a predetermined closed loop pattern having a central opening therein, and wherein the selected surface has spaced edges and is formed of a material adapted to be controllably eroded in a diode sputtering process, walls positioned contiguous or adjacent to each of the spaced edges of the selected surface wherein each of the walls extend substantially normal from and beyond each spaced edge of the selected surface of the ion target and a magnetic member having poles positioned in an opposed spaced relationship to each other and enclosing the walls and the ion target for providing a linear magnetic field (B) through the walls, over the selected surface and through the ion target and wherein the magnetic member has a linear magnetic field of sufficient strength for plasma entrapment between the walls and over the selected surface wh

Abstract: An integrated sputtering means having a housing including a first cavity and a second cavity spaced a predetermined distance from the first cavity and wherein the housing includes a predetermined path extending between the cavities, a mount for supporting an ion target formed of at least one selected material in the interior of the housing wherein the ion target is positioned therein with a selected surface of the ion target positioned contiguous the predetermined path and between said cavities forming a lower boundary for the predetermined path and wherein the mount or the ion target includes means for containing electrons adjacent the ion target selected surface, an electron emitter positioned in one of the cavities, an electron collector positioned in the other of the cavities, and magnetic elements positioned along the predetermined path and located in a predetermined spaced relationship from the ion target selected surface for producing substantially linear shaped lines of magnetic flux between the magne

Abstract: An integrated sputtering means for use in a triode sputtering apparatus having an ion target of a selected material positioned interior to a thin passageway in a housing and magnetic means which establishes a controlled magnetic field of flux having shaped magnetic lines of force which define a magnetic flux pattern having at least one selected flux density in at least one field direction contiguous the first surface of the ion target to encapsulate both electrons and plasma increasing efficiency of sputtering of selected material from the ion target and including an electron emitter and an electron collector to produce, in an evacuated enclosure, a controlled flow of electrons which collide with an ionizable gas within an evacuated enclosure forming a gas plasma which is attracted toward and impinges into an ion target surface formed of a selected material, the collision of which ejects from the ion target surface atoms of selected ion target material which adhere to a surface of the substrate forming a thin