Abstract: A blood species concentration tester, and corresponding method, are disclosed herein. The tester employs the measurement of the characteristics of at least one wavelength of light returned from the eye of a patient to determine the concentration of a species, such as glucose, in a blood stream. The correlation of the characteristics of the at least one wavelength with each other, is utilised to derive an accurate measure that can provide a simpler and more accurate test of blood sugar levels, along with other species concentration levels.

Abstract: A multi-level control system for optical components is disclosed herein. The control of optical components uses the representation of an optical component as an optical function, and the ability to represent a plurality of optical functions as a compound optical function that can be controlled by a higher level controller.

Abstract: An optical edge regeneration system is disclosed herein. The edge regeneration system employs selective amplification in the optical domain to amplify portions of a pulse train that correspond to peaks in the train, while allowing the non-peak portions of the pulse train to pass through without amplification.

Abstract: Existing photodiodes in an optical component used for monitoring input light levels are used to measure the internal temperature of the optical component. Electrical measurements are taken across the photodiode while it is slightly forward biased, and the approximate temperature is determined according to pre-measured current-voltage characteristics of the optical component calibrated at different temperatures. By adjusting its parameters to compensate for the temperature, the performance of the optical component can be optimized. An external microprocessor system controls biasing of the photodiode, electrical measurement of the photodiode, and determination of the optical component temperature.

Abstract: A semiconductor device having a structure originating from field effect transistors of a vertical configuration type in which a deflection is brought about between the electrons so as to be able to switch in an ultra-rapid manner a current or signal, or produce a phase shift. In a very thin monocrystalline gallium arsenide film, a certain number of cells are produced for this purpose and each of them includes a cathode, a first gate electrode embedded in the semiconductor material, a second gate electrode and at least one anode electrode serving as a target for the ballistic electrons. The electron beam is deflected as a function of the different polarizations applied to the gate electrodes.

Abstract: A vertical channel field effect transistor is disclosed which has a specialized grid structure in order to improve the characteristics. The improved field effect transistor utilizes an arrangement of two sets of parallel teeth which intersect to form a mesh-like structure in order to produce conduction filaments. The device is particularly applicable to field effect transistor structures which have two-grid transistors.

Abstract: A field-effect transistor having a gate consisting of a metallic plane projecting metallized wells of less than one micron in diameter through the channel layer downwards to the semiconductor substrate. They are formed by ion-beam etching. Metallization is performed by cathodic sputtering of a substance which forms a Schottky contact with the semiconductor. The wells are spaced at intervals of less than one micron so as to form a row and are joined together by means of a gate electrode.