Abstract: An example snow blower machine includes a first stage snow mover and a second stage snow mover. Snow is received at an inlet opening of the first stage and expels snow to the discharge opening. In a second stage, an impeller chamber receives snow from the first stage. The impeller chamber extends from a snow receiving end proximate the discharge opening to a distal end rearward of the discharge opening. To receive expelled snow from the first stage and deliver the snow to a second discharge opening, an impeller rotatable around an impeller axis at a hub is disposed in the impeller chamber. The impeller may be rotated by an impeller motor having a motor body that is at least partially disposed within the hub.

Abstract: Some embodiments relate to a device disposed on a semiconductor substrate. The semiconductor substrate includes a base region and a crown structure extending upwardly from the base region. The crown structure is narrower than the base region. A plurality of fins extend upwardly from an upper surface of the crown structure. A gate dielectric material is disposed over upper surfaces and sidewalls of the plurality of the fins. A conductive electrode is disposed along sidewall portions of the gate dielectric material. An uppermost surface of the conductive electrode resides below the upper surfaces of the plurality of fins.

Abstract: A hydraulic system for a machine includes a first pump, an implement pump, a control valve, and an auxiliary circuit. The first pump is configured to supply a first fluid flow to a first circuit, such as a steering circuit. The implement pump is configured to supply a second fluid flow to an implement circuit to actuate a primary implement function. The auxiliary circuit is configured to deliver fluid flow to actuate an auxiliary implement function. The auxiliary circuit is fluidly coupled to the implement circuit. The auxiliary circuit is also coupled to the first circuit by the control valve. The control valve is located downstream, in the direction of fluid flow, of the implement pump and the first pump. The control valve is configured to allow at least a portion of the first fluid flow to enter the auxiliary circuit and be delivered to the auxiliary implement function.

Abstract: An example snow blower machine includes a first stage snow mover and a second stage snow mover. Snow is received at an inlet opening of the first stage and expels snow to the discharge opening. In a second stage, an impeller chamber receives snow from the first stage. The impeller chamber extends from a snow receiving end proximate the discharge opening to a distal end rearward of the discharge opening. To receive expelled snow from the first stage and deliver the snow to a second discharge opening, an impeller rotatable around an impeller axis at a hub is disposed in the impeller chamber. The impeller may be rotated by an impeller motor having a motor body that is at least partially disposed within the hub.

Abstract: Some embodiments relate to a device disposed on a semiconductor substrate. The semiconductor substrate includes a base region and a crown structure extending upwardly from the base region. The crown structure is narrower than the base region. A plurality of fins extend upwardly from an upper surface of the crown structure. A gate dielectric material is disposed over upper surfaces and sidewalls of the plurality of the fins. A conductive electrode is disposed along sidewall portions of the gate dielectric material. An uppermost surface of the conductive electrode resides below the upper surfaces of the plurality of fins.

Abstract: Some embodiments relate to a method. A semiconductor substrate is provided and has a base region and a crown structure extending upwardly from the base region. A plurality of fins are formed to extend upwardly from an upper surface of the crown structure. A gate dielectric material is formed over upper surfaces and sidewalls of the plurality of the fins. A conductive electrode material is formed over upper surfaces and sidewalls of the gate dielectric material. An etch is performed to etch back the conductive electrode material so upper surfaces of etched back conductive electrodes reside below the upper surfaces of the plurality of fins.

Abstract: Some embodiments relate to a two transistor band gap reference circuit. A first transistor includes a first source, a first drain, a first body region separating the first source from the first drain, and a first gate. The first drain and first gate are coupled to a DC supply terminal. The second transistor includes a second source, a second drain, a second body region separating the second source from the second drain, and a second gate. The second gate is coupled to the DC supply terminal, and the second drain is coupled to the first source. Body bias circuitry is configured to apply a body bias voltage to at least one of the first and second body regions. Other embodiments relate to FinFET devices.

Abstract: A hydraulic system for a machine includes a first pump, an implement pump, a control valve, and an auxiliary circuit. The first pump is configured to supply a first fluid flow to a first circuit, such as a steering circuit. The implement pump is configured to supply a second fluid flow to an implement circuit to actuate a primary implement function. The auxiliary circuit is configured to deliver fluid flow to actuate an auxiliary implement function. The auxiliary circuit is fluidly coupled to the implement circuit. The auxiliary circuit is also coupled to the first circuit by the control valve. The control valve is located downstream, in the direction of fluid flow, of the implement pump and the first pump. The control valve is configured to allow at least a portion of the first fluid flow to enter the auxiliary circuit and be delivered to the auxiliary implement function.

Abstract: Some embodiments relate to a method. A semiconductor substrate is provided and has a base region and a crown structure extending upwardly from the base region. A plurality of fins are formed to extend upwardly from an upper surface of the crown structure. A gate dielectric material is formed over upper surfaces and sidewalls of the plurality of the fins. A conductive electrode material is formed over upper surfaces and sidewalls of the gate dielectric material. An etch is performed to etch back the conductive electrode material so upper surfaces of etched back conductive electrodes reside below the upper surfaces of the plurality of fins.

Abstract: Some embodiments relate to a two transistor band gap reference circuit. A first transistor includes a first source, a first drain, a first body region separating the first source from the first drain, and a first gate. The first drain and first gate are coupled to a DC supply terminal. The second transistor includes a second source, a second drain, a second body region separating the second source from the second drain, and a second gate. The second gate is coupled to the DC supply terminal, and the second drain is coupled to the first source. Body bias circuitry is configured to apply a body bias voltage to at least one of the first and second body regions. Other embodiments relate to FinFET devices.

Abstract: A process for manufacturing glazing including a substrate provided with a coating including a layer consisting of a porous material, includes depositing on the substrate, via a physical vapor deposition (PVD) process in a vacuum chamber, a coating including a layer of a material including an element selected from Si, Ti, Sn, Al, Zr, In or a mixture of at least two of these elements, oxygen and carbon, the layer in addition optionally including hydrogen, heat treatment of the layer thus deposited, under conditions that enable at least one portion of the carbon to be removed and the layer of porous material to be obtained, wherein the deposition is carried out, on the substrate passing through the chamber, by the sputtering of a carbon target, under a reactive plasma atmosphere including a precursor of the element or elements.

Abstract: A process for manufacturing glazing including a substrate provided with a coating including a layer consisting of a porous material, includes depositing on the substrate, via a physical vapor deposition (PVD) process in a vacuum chamber, a coating including a layer of a material including an element selected from Si, Ti, Sn, Al, Zr, In or a mixture of at least two of these elements, oxygen and carbon, the layer in addition optionally including hydrogen, heat treatment of the layer thus deposited, under conditions that enable at least one portion of the carbon to be removed and the layer of porous material to be obtained, wherein the deposition is carried out, on the substrate passing through the chamber, by the sputtering of a carbon target, under a reactive plasma atmosphere including a precursor of the element or elements.

Abstract: An evaporative heat exchanger includes first and second stacked plates forming a first fluid flow path between a first end and a second end. The first stacked plate defines a plane. Third and fourth stacked plates define a second fluid flow path. A fluid flow plate is positioned between the first and second stacked plates, and has a plurality of flow channels extending substantially parallel to the plane between the first end and the second end. At least one of the first and second stacked plates defines slots that form a portion of the first fluid flow path so that fluid flowing along the first fluid flow path flows along the flow channels in the first direction, then flows along at least one of the slots, then flows into adjacent flow channels and then along the adjacent flow channels in a second direction parallel to the first direction.

Abstract: A mounting method for a skid steer loader is disclosed including coupling a first end portion of a component directly to a first wall of a skid steer loader frame. The method also includes coupling a second end portion of the component to an opposite wall of the skid steer loader frame by a mounting system that allows for dimensional differences between the component and the skid steer loader frame.

Abstract: A mounting method for a skid steer loader is disclosed including coupling a first end portion of a component directly to a first wall of a skid steer loader frame. The method also includes coupling a second end portion of the component to an opposite wall of the skid steer loader frame by a mounting system that allows for dimensional differences between the component and the skid steer loader frame.

Abstract: A mounting method for a skid steer loader is disclosed including coupling a first end portion of a component directly to a first wall of a skid steer loader frame. The method also includes coupling a second end portion of the component to an opposite wall of the skid steer loader frame by a mounting system that allows for dimensional differences between the component and the skid steer loader frame.

Abstract: A method for the continuous vacuum cleaning of a substrate, characterized in that: a species is chosen that has a low sputtering efficiency and is chemically active with regard to the soiling matter; using at least one linear ion source, a plasma is generated from a gas mixture comprising predominantly the species having a low sputtering efficiency, especially one based on oxygen; and at least one surface portion of the substrate is subjected to the plasma so that said ionized species at least partly eliminates, by chemical reaction, the soiling matter possibly adsorbed or located on the surface portion.

Abstract: The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam is crystallized.

Abstract: The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam has a refractive index that can be adjusted according to the parameters of the ion source, said ion source being a linear source.

Abstract: A mounting method for a skid steer loader is disclosed including coupling a first end portion of a component directly to a first wall of a skid steer loader frame. The method also includes coupling a second end portion of the component to an opposite wall of the skid steer loader frame by a mounting system that allows for dimensional differences between the component and the skid steer loader frame.