Abstract: Mechanisms for controlling a solid-state drive (SSD), including: determining a workload type of the SSD using a hardware processor; determining an available bandwidth of the SSD based on at least the workload type; determining a number of host requests allowed to be processed during a current time interval based at least on the available bandwidth and a target moving average of flash translation layer (FTL) relocation source bands of the SSD; determining a number of relocations allowed to be performed in the SSD during the current time interval based at least on a number of host requests that were allowed to have been processed in a previous time interval, the target moving average, and an actual moving average of FTL relocation source bands of the SSD; and controlling the SSD to process the number of host requests and perform the number of relocations during the current time interval.

Abstract: This application is directed to managing garbage collection using a plurality of queues of memory bands of a memory system. The memory system obtains a request to organize data stored in a plurality of memory bands of the memory system, and each memory band has a data validity level. In response to the request, the memory system generates the plurality of queues of memory bands based on the data validity levels of the plurality of memory bands, and the plurality of queues correspond to a plurality of non-overlapping validity level ranges. The plurality of memory bands are assigned into a subset of queues based on the data validity levels of the plurality of memory bands. The memory system 200 allocates a first memory bandwidth among the subset of queues, and implements garbage collection operations on the subset of queues in parallel using respective portions of the first memory bandwidth.

Abstract: A method and controller for operating a memory system in communication with a host. The method and controller logically arrange a sequence of reclaim sub-groups within a memory device. The method and controller process the reclaim sub-groups according to the sequence to control the memory device to perform garbage collection on the reclaim sub-groups in the memory device. In the sequence, the reclaim sub-groups are processed during the garbage collection such that at least one re-ordered data sequence in the sequence of the reclaim sub-groups being processed has re-ordered valid data that is not clumped.

Abstract: This application is directed to managing garbage collection using a plurality of queues of memory bands of a memory system. The memory system obtains a request to organize data stored in a plurality of memory bands of the memory system, and each memory band has a data validity level. In response to the request, the memory system generates the plurality of queues of memory bands based on the data validity levels of the plurality of memory bands, and the plurality of queues correspond to a plurality of non-overlapping validity level ranges. The plurality of memory bands are assigned into a subset of queues based on the data validity levels of the plurality of memory bands. The memory system 200 allocates a first memory bandwidth among the subset of queues, and implements garbage collection operations on the subset of queues in parallel using respective portions of the first memory bandwidth.

Abstract: A method and controller for operating a memory system in communication with a host. The method and controller logically arrange a sequence of reclaim sub-groups within a memory device. The method and controller process the reclaim sub-groups according to the sequence to control the memory device to perform garbage collection on the reclaim sub-groups in the memory device. In the sequence, the reclaim sub-groups are processed during the garbage collection such that at least one re-ordered data sequence in the sequence of the reclaim sub-groups being processed has re-ordered valid data that is not clumped.

Abstract: This application is directed to managing garbage collection using a plurality of queues of memory bands of a memory system. The memory system obtains a request to organize data stored in a plurality of memory bands of the memory system, and each memory band has a data validity level. In response to the request, the memory system generates the plurality of queues of memory bands based on the data validity levels of the plurality of memory bands, and the plurality of queues correspond to a plurality of non-overlapping validity level ranges. The plurality of memory bands are assigned into a subset of queues based on the data validity levels of the plurality of memory bands. The memory system 200 allocates a first memory bandwidth among the subset of queues, and implements garbage collection operations on the subset of queues in parallel using respective portions of the first memory bandwidth.

Abstract: A device and related method, the device including memory, communications circuitry, and processing circuitry. The processing circuitry allocates processing bandwidth of the device to process the received instructions and executes the instructions based on the allocated processing bandwidth using a first amount of free memory. If the used first amount of free memory is at least a first threshold, processing circuitry reduces the allocated processing bandwidth to process the received instructions based on the used first amount of free memory and continues to execute the instructions based on the reduced allocated processing bandwidth using a second amount of free memory of the device. If the used second amount of free memory is at least a second threshold, processing circuitry further reduces the allocated processing bandwidth to process the received instructions based on the used second amount of free memory, and allocates processing bandwidth to perform garbage collection of the memory.

Abstract: An indirect addressing memory system and related method for a storage device, including memory and processing circuitry, the processing circuitry to receive a read request from a host. The processing circuitry is to determine to relocate data at an address of the memory associated with the read request using a write stream of a plurality of write streams. The processing circuitry is then to cause the data to be relocated using the write stream. The plurality of write streams include a hot write stream, a warm write stream and a cold write stream. To cause the data to be relocated using the write stream, the processing circuitry is to determine the write stream based on an age of the data or an amount of invalid data in the data.

Abstract: A method and controller for operating a memory system in communication with a host. The method and controller logically arrange a sequence of reclaim sub-groups within a memory device. The method and controller process the reclaim sub-groups according to the sequence to control the memory device to perform garbage collection on the reclaim sub-groups in the memory device. In the sequence, the reclaim sub-groups are processed during the garbage collection such that at least one re-ordered data sequence in the sequence of the reclaim sub-groups being processed has re-ordered valid data that is not clumped.

Abstract: Methods and apparatus for compensating for charge loss in memories include tracking a specific block of the main memory array and determining charge loss compensation by comparing pre-cycled and post-cycled mean threshold voltages for the tracking block; or tracking each block of the main memory and determining charge loss and compensation on a block by block basis.

Abstract: Methods and apparatus for compensating for charge loss in memories include tracking a specific block of the main memory array and determining charge loss compensation by comparing pre-cycled and post-cycled mean threshold voltages for the tracking block; or tracking each block of the main memory and determining charge loss and compensation on a block by block basis.

Abstract: Methods and apparatus for compensating for charge loss in memories include tracking a specific block of the main memory array and determining charge loss compensation by comparing pre-cycled and post-cycled mean threshold voltages for the tracking block; or tracking each block of the main memory and determining charge loss and compensation on a block by block basis.

Abstract: Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of memory cells; and a data randomizer configured to randomly or pseudo-randomly change original data to be stored in the memory block to changed data. The original data is changed such that a pattern of data as stored in the memory block is different than what it would have been if the original data had been stored in the memory block during a write operation. This configuration can reduce or eliminate data pattern-dependent errors in data digits stored in memory cells.

Abstract: Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of memory cells; and a data randomizer configured to randomly or pseudo-randomly change original data to be stored in the memory block to changed data. The original data is changed such that a pattern of data as stored in the memory block is different than what it would have been if the original data had been stored in the memory block during a write operation. This configuration can reduce or eliminate data pattern-dependent errors in data digits stored in memory cells.

Abstract: Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of memory cells; and a data randomizer configured to randomly or pseudo-randomly change original data to be stored in the memory block to changed data. The original data is changed such that a pattern of data as stored in the memory block is different than what it would have been if the original data had been stored in the memory block during a write operation. This configuration can reduce or eliminate data pattern-dependent errors in data digits stored in memory cells.

Abstract: Methods and apparatus for compensating for charge loss in memories include tracking a specific block of the main memory array and determining charge loss compensation by comparing pre-cycled and post-cycled mean threshold voltages for the tracking block; or tracking each block of the main memory and determining charge loss and compensation on a block by block basis.

Abstract: Methods and apparatus for compensating for charge loss in memories include tracking a specific block of the main memory array and determining charge loss compensation by comparing pre-cycled and post-cycled mean threshold voltages for the tracking block; or tracking each block of the main memory and determining charge loss and compensation on a block by block basis.

Abstract: A method for use with devices in a stacked package is discussed. By preprogramming a unique identifier into a device during manufacture, the device can determine its position in the stack and perform a task based on its position in the stack. In one embodiment, the task is power-up.

Abstract: Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of memory cells; and a data randomizer configured to randomly or pseudo-randomly change original data to be stored in the memory block to changed data. The original data is changed such that a pattern of data as stored in the memory block is different than what it would have been if the original data had been stored in the memory block during a write operation. This configuration can reduce or eliminate data pattern-dependent errors in data digits stored in memory cells.

Abstract: Methods and apparatuses for refreshing non-volatile memories due to changes in memory cell charges, such as charge loss, are disclosed. Embodiments generally comprise a voltage generator to create a sub-threshold voltage for a memory state of memory cells in a block. Once the sub-threshold voltage is applied to a word line a state reader determines states of memory cells coupled to the word line. If the state reader determines that one or more of the memory cells coupled to the word line is in the memory state, despite the sub-threshold voltage, a memory refresher may program a number of memory cells in the block. Method embodiments generally comprise applying a sub-threshold voltage to a word line for a plurality of memory cells, detecting at least one memory cell of the plurality violates a state parameter, and refreshing a block of memory cells associated with the plurality of cells.