Abstract: The various technologies presented herein relate to a three dimensional manufacturing technique for application with semiconductor technologies. A membrane layer can be formed over a cavity. An opening can be formed in the membrane such that the membrane can act as a mask layer to the underlying wall surfaces and bottom surface of the cavity. A beam to facilitate an operation comprising any of implantation, etching or deposition can be directed through the opening onto the underlying surface, with the opening acting as a mask to control the area of the underlying surfaces on which any of implantation occurs, material is removed, and/or material is deposited. The membrane can be removed, a new membrane placed over the cavity and a new opening formed to facilitate another implantation, etching, or deposition operation. By changing the direction of the beam different wall/bottom surfaces can be utilized to form a plurality of structures.

Abstract: Some embodiments of the present invention include apparatuses and methods relating to pixelated masks for high resolution photolithography.

Abstract: The present invention comprises a tool for and a method of inspecting a mask used in photolithography to determine errors in phase, amplitude, and pattern edges. An embodiment of the tool comprises a laser source, a polarizing beam splitter, a first shutter, a mask, a second shutter, a quarter wave retarder, a single-mode optical fiber, and a CCD detector array. An embodiment of the method comprises four independent measurements of light intensity, comprising: a pattern of a mask, a diffraction pattern of a reference pinhole, an interference pattern of the mask and the reference pinhole, and an interference pattern of the mask and the reference pinhole with a known phase difference. Calculations are performed to determine phase and amplitude information as a function of location on the mask. The phase and amplitude information is then compared with a design layout of the mask to determine pattern edge information and identify possible defects in the mask.