Abstract: A rotary member for restricting the flow of high temperature gas from a first cavity, intermediate rotating and stationary members of a gas turbine engine, and a second cavity, includes a central disc bore segment having an inner circumference and an outer circumferential seal segment. A closed cavity is formed by a portion of the rotating member and a portion of the rotating seal disc, with the inner circumference of the central disc bore segment positioned in a predetermined spaced relation with respect to the rotating member, forming a gap therebetween. The closed cavity contains at least one aperture adjacent the outer circumferential seal segment. A portion of the high temperature gas flows through the aperture into the closed cavity, then exits the closed cavity through the gap formed between the inner circumference of the central disc bore segment and the rotating member. The gap in effect presents a constriction which causes a concomitant increase in the velocity of the gas through the gap.

Abstract: Apparatus and a method for generating timing signals to be utilized in latched type memories only when the address signals are valid. A CAS signal is generated in response to an RAS signal via a device which tracks the worst case delay of memory address signals and does not permit the application of the CAS signal to memory until the worst case delay of the memory address signals has been accounted for.A memory array is comprised of any combination of latched or non-latched tri-state memories. The latched memories are coupled to a data bus utilizing conventional TTL circuits in combination with a power driver to simulate conventional tri-state buffer circuits. When the power driver/drivers remove(s) power from TTL circuits, the tri-state characteristics are simulated; whereas when the power driver applies power to the TTL circuits, they operate in their normal mode and present a normal impedance between the data bus and data-out lines of the memory array.

Abstract: An apparatus is disclosed which comprises an improved voltage driver circuit. Commonly available voltage driver circuits are deficient for driving n-channel MOS RAMs due to insufficient peak voltage and extended rise time. The apparatus, without requiring an additional voltage power supply or modifications to the memory system environment, effectively increases an internal drive voltage which results in the desired performance characteristics for driver circuits.