Abstract: An apparatus and associated method for reorienting the magnetic anisotropy of magnetic recording discs. A pallet that is moveable along a path of travel is also sized to selectively hold either a first magnetic recording disc of a first size or a second magnetic recording disc of a second size different than the first size. A first processing chamber in the path of travel is adapted for forming a soft underlayer (SUL) of magnetic material with non-radially oriented magnetic anisotropy on a substrate corresponding to one of the first and second magnetic recording discs. A second processing chamber in the path of travel downstream of the first processing chamber is adapted for selectively re-orienting the SUL's magnetic anisotropy via a magnetic source emanating a first magnetic field if the substrate corresponds to the first magnetic recording disc and emanating a different second magnetic field if the substrate corresponds to the second magnetic recording disc.

Abstract: A method of forming a layer of a magnetic material with radially oriented magnetic anisotropy, comprising sequential steps of providing a circular, annular disk-shaped substrate having an inner diameter and an outer diameter, forming a layer of a magnetic material with non-radially oriented magnetic anisotropy over at least one surface of the substrate, and re-orienting the magnetic anisotropy in a radial direction. Preferably, the re-orientation is performed magnetically and the radially oriented layer serves as a magnetically soft underlayer (SUL) of a magnetic recording medium. Also disclosed is a multi-chamber apparatus for performing the disclosed process.

Abstract: Methods and apparatus are provided for static-biasing a pre-metalized non-conductive substrate within a process chamber. A substrate holder that holds a pre-metalized non-conductive substrate is engaged by a lift mechanism that provides movement of the substrate in a first, upward direction to a contact position within the process chamber and in a second direction to a non-contact position. When the substrate holder is moved to the contact position, the substrate electrically engages a conductive spring-loaded compliance mechanism that is mounted in a fixed position within the process chamber. The spring-loaded compliance mechanism is connected to a bias-voltage feed-through for the process chamber that applies a bias voltage to the substrate via the spring-loaded compliance mechanism.

Abstract: An apparatus and associated method for reorienting the magnetic anisotropy of magnetic recording discs. A pallet that is moveable along a path of travel is also sized to selectively hold either a first magnetic recording disc of a first size or a second magnetic recording disc of a second size different than the first size. A first processing chamber in the path of travel is adapted for forming a soft underlayer (SUL) of magnetic material with non-radially oriented magnetic anisotropy on a substrate corresponding to one of the first and second magnetic recording discs. A second processing chamber in the path of travel downstream of the first processing chamber is adapted for selectively re-orienting the SUL's magnetic anisotropy via a magnetic source emanating a first magnetic field if the substrate corresponds to the first magnetic recording disc and emanating a different second magnetic field if the substrate corresponds to the second magnetic recording disc.

Abstract: A cylindrical magnetron sputtering cathode comprises a rotatable cylindrical sputtering target, a magnet assembly that includes a plurality of Halbach magnet arrays disposed within the rotatable cylindrical sputtering target and a magnetic magnet support and field shaper disposed within the sputtering target and to which the magnet assembly is attached.

Abstract: Methods and apparatus are provided for static-biasing a pre-metalized non-conductive substrate within a process chamber. A substrate holder that holds a pre-metalized non-conductive substrate is engaged by a lift mechanism that provides movement of the substrate in a first, upward direction to a contact position within the process chamber and in a second direction to a non-contact position. When the substrate holder is moved to the contact position, the substrate electrically engages a conductive spring-loaded compliance mechanism that is mounted in a fixed position within the process chamber. The spring-loaded compliance mechanism is connected to a bias-voltage feed-through for the process chamber that applies a bias voltage to the substrate via the spring-loaded compliance mechanism.

Abstract: A magnetron sputtering target assembly, comprises a target adapted to comprise of at least one material to be sputtered, the target including a pair of oppositely facing surfaces; and a magnet assembly comprising a plurality of Halbach magnet arrays adjacent one of the surfaces for providing magnetic field lines which emerge from and re-enter the other of the surfaces to form an arched, closed-loop magnetic field path over the other surface. The enhanced magnetic flux intensity provided by the Halbach magnet assemblies, relative to conventional magnetron magnet assemblies, facilitates sputtering of thick targets comprised of magnetic materials in the manufacture of recording media, as well as low pressure sputtering of high quality carbon-containing protective overcoat materials for such media.

Abstract: A method of forming a thin film on a substrate/workpiece by sputtering, comprising steps of: (a) providing an apparatus comprising a vacuum chamber including at least one sputtering source and a gas supply means for injecting a gas containing at least one reactive component into said chamber, the gas supply means comprising a plurality of differently-sized outlet orifices adapted for providing substantially the same flow rate of gas from each orifice; (b) providing a substrate/workpiece having at least one surface for formation of a thin film thereon; (c) generating a sputtered particle flux from the at least one sputtering source; (d) injecting the gas containing the at least one reactive component into the chamber via the gas supply means, such that the same gas flow rate is provided at each orifice; and (e) forming a reactively sputtered thin film on the at least one surface of the substrate/workpiece, the reactively sputtered thin film having a substantially uniform content of the at least one reactive

Abstract: Apparatus for forming a multilayer film on at least one surface of a substrate comprises a vacuum chamber including: (a) a pair of parallel top and bottom walls connected by a side wall; (b) at least one entry/exit means in the side wall for insertion and withdrawal of a substrate from the chamber; (c) a plurality of spaced-apart, radially extending, linearly elongated sputtering sources arranged in a co-planar array adjacent one of the top or bottom walls of the chamber, each of the linearly elongated sputtering sources having a length and a width; and (d) a gripper/transporter for gripping and moving a substrate in a generally circular, planar path past each of the plurality of radially extending sputtering sources, such that the at least one deposition surface of the substrate faces each of the sputtering sources during movement along the circular path, for deposition of the multilayer film thereon.

Abstract: A vacuum chemical epitaxy apparatus comprising a first mixing chamber having an inlet for introducing a metal-organic gaseous materials and n-type and p-type dopants, and a plurality of outlets for directing the flow of said metal-organic gases and n-type and p-type dopants toward a substrate; a second mixing chamber disposed below said first chamber having an inlet for introducing a metal-organic gaseous material and n-type and p-type dopants, and a plurality of passages through said first chamber and an outlet for each passage, wherein the passage outlets are in substantially the same plane with the outlets of the first chamber; and means for exhausting the metal-organic gaseous materials and n-type and p-type dopants from the second chamber.

Abstract: An injection block having a plurality of geometrically arranged injection sources for gaseous Group III metal organic compounds is oriented substantially perpendicular to the placement of at least one semiconductor wafer substrate within a vacuum reaction chamber. The injector sources are sized to provide disbursing flow of the compounds capable of depositing a layer of about 5% uniform thickness or less over substantially the entire semiconductor wafer. An injection source of Group V compounds is located centrally within the geometrically arranged injection sources for the Group III compounds. The Group V injection source is sized to supply an excess of the Group V compounds required to react with the Group III compounds in order to form Group III-V semiconductor layers on the substrate and partition the Group III sources into groups having substantially equal numbers of injection sources. An excess of Group V comounds is injected.

Abstract: The present invention is an apparatus of mechanically stacked photovoltaic cells having two cells. The bottom cell has a layer of GaSb having regions of different conductivity forming a homojunction therein. The GaSb layer is sandwiched between a conductive substrate and a bottom passivating layer. In the bottom cell is a means for forming electrical contacts to the substrate and the incident surface of the bottom passivating layer. The top cell has a layer of GaAs having regions of different conductivity forming a homojunction therein, a top passivating layer contacting the surface of the layer of GaAs which is incident to solar radiation, and a means for forming electrical contacts to the layer of GaAs opposed to solar radiation and the incident surface of the passivating layer.

Abstract: The present invention is an apparatus of mechanically stacked photovoltaic cells having a bottom heat spreader and a top heat spreader, a bottom photovoltaic cell and a top photovoltaic cell, and means for forming the necessary electrical contacts. The heat spreaders are electrically insulated from each other but are thermally connected to each other. The bottom photovoltaic cell has an anode and a cathode and is thermally bonded to the bottom heat spreader and is thermally connected to the top heat spreader. The top photovoltaic cell has an anode and a cathode, is electrically insulated from the bottom photovoltaic cell, and is thermally bonded to the top heat spreader and is thermally connected to the bottom heat spreader.

Abstract: A mechanically stacked module package is described. The package permits the effective mechanical stacking of two solar cells in a compact arrangement. The design also permits the easy wiring of the package into a voltage matching configuration for module wiring thus eliminating the problems of current matching the top and bottom cells. The package design can be used with any mechanically stacked cells although the design is most suitable for concentrator solar cell configurations where the removal of heat to avoid degradation and shortening of lifetime is a major concern.

Abstract: Disclosed is a vapor source assembly comprising a means for supporting at least one material to be vaporized, a plurality of electron-beam guns for producing electron beams, and a deflecting means for producing a magnetic field to deflect each electron beam through an arcuate path from its electron-beam gun to the material to be vaporized. The deflecting means includes a plurality of pairs of pole pieces positioned such that a north pole piece and a south pole piece, are on opposite sides of each electron-beam gun, and a plurality of magnetic means including magnets for interconnecting the south pole piece of each successive electron-beam gun with the north pole piece of the next successive electron-beam gun so as to form a single magnetic circuit. In preferred embodiments, the electron-beam guns are positioned below the maximum level of material in a cluster of crucibles, and two long pole pieces extend on opposite sides of the crucibles, but no pole piece extends between adjacent crucibles.

Abstract: A method for depositing aluminum layers having a predetermined reflectance or a predetermined resistivity is disclosed. The layers are deposited by sputtering a target comprising 90% or greater aluminum. The parameters which must be controlled include the partial pressure of reactive gases, such as nitrogen, hydrogen, oxygen and water vapor, which are minor constituents of the sputtering gas, the total sputtering gas pressure, the substrate temperature, and the deposition rate.

Abstract: A planar magnetron sputtering apparatus is provided with an additional, variable magnetic field normal to and substantially throughout the erosion region of a cathode plate. Application of the foregoing variable magnetic field effects continuous variations in the general location of the points at which magnetic lines of flux are parallel to the cathode plate which correspondingly results in variations in the points of maximum cathode plate erosion. By producing a less acute erosion pattern over a wider cathode plate area, a greater portion of the cathode plate material may be sputtered from any particular planar cathode plate.