Patents by Inventor Paul Sapp

Paul Sapp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090205692
    Abstract: The invention comprises an overhead shade device adapted to be attached to a mobility aid. The invention has an elongate shaft having an upper end and a lower end. The shaft is attached to the mobility aid at the shaft's lower end in a manner that holds the shaft functionally vertically. A shade is attached to the upper end of the shaft. The shade may be an umbrella-type shade, or a fan, or other functionally horizontal surface that shades the user when deployed. In one embodiment of the invention, the perimeter of the shade when opened includes a base side and an arc of less than 360 degrees, and more preferably, an arc of less than about 200 degrees. The base side does not extend significantly beyond the outer edge of one side of the user and/or mobility aid when said shaft is held in a functionally vertical orientation. The area of the shade may be continuously variable between its limits.
    Type: Application
    Filed: February 19, 2008
    Publication date: August 20, 2009
    Inventor: Paul Sapp
  • Patent number: 6424035
    Abstract: A semiconductor bilateral switch that minimizes the on-state resistance by making a common-source connection between the switch transistors internal to the package. Wire bonds internally connecting the source electrodes of the transistors also provide the function of one or both of a current sense resistor and fuse element.
    Type: Grant
    Filed: November 5, 1998
    Date of Patent: July 23, 2002
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Steven Paul Sapp, David S. Schoenwald
  • Patent number: 6351018
    Abstract: A monolithically integrated Schottky diode together with a high performance trenched gate MOSFET. A MOS enhanced Schottky diode structure is interspersed throughout the trench MOSFET cell array to enhance the performance characteristics of the MOSFET switch. The forward voltage drop is reduced by taking advantage of the low barrier height of the Schottky structure. In a specific embodiment, the width of the trench is adjusted such that depletion in the drift region of the Schottky is influenced and controlled by the adjacent MOS structure to increase the reverse voltage capability of the Schottky diode.
    Type: Grant
    Filed: February 26, 1999
    Date of Patent: February 26, 2002
    Assignee: Fairchild Semiconductor Corporation
    Inventor: Steven Paul Sapp