Abstract: An apparatus for obtaining ion energy distribution, IED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid, and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; wherein at least one insulation layer includes a peripheral portion which is of reduced thickness with respect to the remaining portion of the insulation layer.

Abstract: A system for non-invasive sensing of radio-frequency current spectra. In one example, the system comprises a plasma processing chamber, a plasma generator, and a shunt connector having a resistor therein. In one example, the shunt connector is attached across an opening in a ground-return path between the chamber and the generator.

Abstract: Methods of operating an apparatus to obtain ion energy distribution measurements in a plasma processing system are described.

Abstract: A matching unit controller working in combination with a matching unit for a plasma processing machine is described. In one example, the controller has a master controller application and acts as a local master in the matching unit. In one example, the controller gathers data from the input and output sensors and feeds the data to an intelligent algorithm. In one example, the output from the algorithm is used to set the matching unit capacitor positions. In one example, the controller also has a slave controller application to communicate with a master controller of the plasma processing machine.

Abstract: A sensing device for monitoring electromagnetic radiation emanating from a plasma processing system. The sensing device may, for example, comprise at least two of a first probe for detecting a time varying RF electric field, a second probe for detecting a time varying RF magnetic field, and an optical probe for detecting the modulated light emission. The sensing device may, for example, further comprise a signal processing unit configured to receive a signal from each probe and to monitor the electromagnetic radiation with respect to only a single frequency of each signal.

Abstract: An apparatus for obtaining ion energy distribution, IED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; and a high voltage generating circuit.

Abstract: An apparatus for obtaining ion energy distribution, TED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid, and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; wherein at least one insulation layer includes a peripheral portion which is of reduced thickness with respect to the remaining portion of the insulation layer.

Abstract: A system for monitoring a condition in an enclosed plasma processing space (102). The system comprises a sensor (338), arranged to be provided within the enclosed plasma processing space, for sensing a condition in the enclosed plasma processing space and a modulation circuit (342), connected to the sensor, and arranged to modulate an output of the sensor to provide a modulated signal. The system further comprises a first transmission line coupler (330) arranged to be disposed within the enclosed plasma processing space. The first transmission line coupler (546) is connected to the modulation circuit and is arranged to couple the modulated signal to a transmission line, which is arranged to deliver energy into the enclosed plasma space.

Abstract: Samples representing signals and noise from a plasma system across a frequency range are collected. A first complex frequency-domain signal component is identified from a sample corresponding to a frequency value F at which a local maximum signal is found. This first component is phase-adjusted by a variable angle ? to a predetermined phase angle ?, and stored. A further complex component is identified corresponding to a frequency F(N) representing an Nth order harmonic of F. This further component is phase-adjusted by an angle N×?, and stored. The procedure is repeated to build up sets of phase-adjusted first and further components, with ? chosen in each iteration for the first component to give a constant phase angle ?, and within any iteration the value of ? used for the first component is employed in the adjustment of the further component. The aggregated, phase-adjusted components exhibit increased signal-to-noise.

Abstract: A system for monitoring a condition in an enclosed plasma processing space (102). The system comprises a sensor (338), arranged to be provided within the enclosed plasma processing space, for sensing a condition in the enclosed plasma processing space and a modulation circuit (342), connected to the sensor, and arranged to modulate an output of the sensor to provide a modulated signal. The system further comprises a first transmission line coupler (330) arranged to be disposed within the enclosed plasma processing space. The first transmission line coupler (546) is connected to the modulation circuit and is arranged to couple the modulated signal to a transmission line, which is arranged to deliver energy into the enclosed plasma space.

Abstract: A method of measuring ion current between a plasma and an electrode in communication with the plasma is disclosed. A time-varying voltage at the electrode and a time- varying current through the electrode are measured. The method comprise recording, for each of a plurality of voltage values, v?, a plurality, n, of current values I(v?); and obtaining from the current and voltage values a value of the ion current. The electrode is insulated from the plasma by an insulating layer, so that the current values lack a DC component.

Abstract: A method for detecting electrical arcing in a plasma process powered by an AC source comprises the steps of sampling at least one Fourier component of the AC source waveform distorted by the non-linear response of the plasma, determining when a change in amplitude of the component, irrespective of the direction of the change, exceeds any one of a plurality of different threshold levels, and determining the duration that each such threshold is exceeded. Each threshold is a predetermined fraction of a running average of the amplitude of the component.