Patents by Inventor Paul Shen
Paul Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150311375Abstract: A method of making and a photodetector comprising a substrate; a p-type or n-type layer; first and second region each having polarizations, a first interface therebetween, the magnitudes and directions of the first and second polarizations being such that a scalar projection of second polarization on the growth direction relative to the scalar projection of the first polarization projected onto the growth direction is sufficient to create a first interface charge; and a third region suitable for forming one of an n-metal or p-metal contact thereon having a third polarization, a second interface between the second and third regions, the third polarization having a scalar projection on the growth direction that, relative to scalar projection of the second polarization onto the growth direction, is sufficient to create a second interface charge; the first and second interface charges creating an electrostatic potential barrier to carriers defining a predetermined wavelength range.Type: ApplicationFiled: May 23, 2014Publication date: October 29, 2015Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-IInventors: Paul Shen, Lee Ellen Rodak, Chad Stephen Gallinat, Anand Venktesh Sampath, Michael Wraback
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Publication number: 20150163555Abstract: The present invention relates to broadcasting/multicasting of media content over a communication network using shared bandwidth available from peer-to-peer networking. The system of the present invention includes a plurality of broadcast devices, a plurality of receiving devices, a plurality of databases, and a control center. The control center provides a number of services, including but not limited to channel control, ad insertion, conditional access, program guide services, and the like. The broadcast device converts media content, which can be television, radio, and other data, received from various content providers, into digital data packets, having a suitable format for transmission. Each receiving device will request the relevant packets, decode the received packets, and display or present the media content contained in the packets via an associated device. Packets may be received directly from the broadcast devices or from peers (other receiving devices) on the network.Type: ApplicationFiled: October 29, 2014Publication date: June 11, 2015Inventors: Paul Shen, Jay Shen
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Patent number: 8904456Abstract: The present invention relates to broadcasting/multicasting of media content over a communication network using shared bandwidth available from peer-to-peer networking. The system of the present invention includes a plurality of broadcast devices, a plurality of receiving devices, a plurality of databases, and a control center. The control center is the central nerve of the network, and provides a number of services, including but not limited to channel control, ad insertion, conditional access, program guide services, and the like. The broadcast device converts media content, which can be television, radio, and other data, received from various content providers, into digital data packets, having a suitable format for transmission over the Internet. Each receiving device will request the relevant packets, decode the received packets, and display or present the media content contained in the packets via an associated device.Type: GrantFiled: February 9, 2007Date of Patent: December 2, 2014Assignee: TVU Networks CorporationInventors: Paul Shen, Jay Shen
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Patent number: 8564014Abstract: An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.Type: GrantFiled: July 12, 2010Date of Patent: October 22, 2013Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Anand Venktesh Sampath, Charles J. Collins, Gregory Alan Garrett, H. Paul Shen, Michael Wraback
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Publication number: 20130238960Abstract: Apparatus and methods for maximizing utilization of a dynamically varying channel are provided. A transmitter encodes and transmits data over one or more digital data channels. A forward error correction coder is associated with the transmitter for error correction coding of one or more blocks of the data. The one or more blocks of error correction coded data are transmitted at a predetermined transmitting rate over the one or more digital data channels to a receiving module. A rate control module is provided for controlling a data rate of the transmitter and the sending of the error correction coded data of the forward error correction coder based on feedback from the receiving module. The feedback may comprise a receiving data rate of received data.Type: ApplicationFiled: March 8, 2013Publication date: September 12, 2013Applicant: TVU NETWORKS CORPORATIONInventor: Paul Shen
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Patent number: 8464357Abstract: The present invention provides methods and systems for fingerprint-based copyright protection of real-time content. A first fingerprint is provided for content from a fingerprint ingesting device to a central server. The first fingerprint is associated with one or more business rules for the content at the central server. At least one of (a) a second fingerprint is provided for the content from a broadcast device to the central server, and (b) a third fingerprint is provided for the content from a receiving device to the central server. The first fingerprint is then compared with the at least one of the second and third fingerprints at the central server. One or more corresponding business rules may then be determined for the content based on the comparing.Type: GrantFiled: June 21, 2010Date of Patent: June 11, 2013Assignee: TVU Networks CorporationInventor: Paul Shen
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Publication number: 20120313847Abstract: Methods, apparatuses and computer program products are provided for facilitating interaction via motion gestures. A method may include receiving an indication of at least one motion gesture made with a device. The method may further include determining a contextual state of a device. The method may additionally include determining, by a processor, a relationship between the at least one motion gesture and each of a plurality of predefined motion gestures and causing, based at least in part on the determined relationship, the device to perform an action associated with a respective predefined gesture. Corresponding apparatuses and computer program products are also provided.Type: ApplicationFiled: June 9, 2011Publication date: December 13, 2012Applicant: Nokia CorporationInventors: Peter Pal Boda, Hawk Yin Pang, John Paul Shen, Zhigang Liu
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Patent number: 8269222Abstract: A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer formed of a first semiconductor material crystal lattice which terminates at an interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer substantially transparent to light in the predetermined wavelength range and having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the first interface charge so as to increase the collection of photogenerated carriers by the photodetector.Type: GrantFiled: May 24, 2011Date of Patent: September 18, 2012Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Paul Shen, Michael Wraback, Anand V Sampath
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Patent number: 8269223Abstract: An avalanche photodetector comprising a multiplication layer formed of a first material having a first polarization; the multiplication layer having a first electric field upon application of a bias voltage; an absorption layer formed of a second material having a second polarization forming an interface with the multiplication layer; the absorption layer having a second electric field upon application of the bias voltage, the second electric field being less than the first electric field or substantially zero, carriers created by light absorbed in the absorption layer being multiplied in the multiplication layer due to the first electric field; the absorption layer having a second polarization which is greater or less than the first polarization to thereby create an interface charge; the interface charge being positive when the first material predominately multiplies holes, the interface charge being negative when the first material predominately multiplies electrons, the change in electric field at the inteType: GrantFiled: May 26, 2011Date of Patent: September 18, 2012Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Michael Wraback, Paul Shen, Anand V Sampath
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Patent number: 7956369Abstract: A light emitting device comprising: a polar template; a p-type layer grown thereon; the p-type layer having a first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a second polarization vector that is larger than the first polarization vector; the n-type layer and p-type layer forming an interface. Another preferred embodiment light emitting device comprises a polar template; an n-type layer grown on the template; the n-type layer having a first polarization vector having a first projection relative to a growth direction; a p-type layer grown on the n-type layer having a second polarization vector that is larger than the first polarization vector. In both embodiments, the first polarization vector in the p-layer and second polarization vector in the n-layer create discontinuity at the interface resulting in a negative charge appearing at the interface.Type: GrantFiled: May 7, 2009Date of Patent: June 7, 2011Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Meredith L. Reed, Michael Wraback, Paul Shen
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Patent number: 7919764Abstract: A method and device for generating terahertz radiation comprising a polar crystal material layer operative to emit terahertz radiation; the polar crystal material layer comprising a plurality of stacking faults; the stacking faults lying substantially perpendicular to the polar axis and forming boundaries at which the internal electric polarization terminates leading to charges accumulating at the boundaries, and creation of internal electric fields oriented along the polar axis; a pulsed radiation source for creating photogenerated carriers in the polar crystal material; whereby the photogenerated carriers accelerate in the internal electric fields associated with the termination of the internal electric polarization by the stacking faults to thereby generate terahertz radiation.Type: GrantFiled: May 5, 2009Date of Patent: April 5, 2011Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Grace D. Metcalfe, Michael Wraback, Paul Shen
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Publication number: 20110004944Abstract: The present invention provides methods and systems for fingerprint-based copyright protection of real-time content. A first fingerprint is provided for content from a fingerprint ingesting device to a central server. The first fingerprint is associated with one or more business rules for the content at the central server. At least one of (a) a second fingerprint is provided for the content from a broadcast device to the central server, and (b) a third fingerprint is provided for the content from a receiving device to the central server. The first fingerprint is then compared with the at least one of the second and third fingerprints at the central server. One or more corresponding business rules may then be determined for the content based on the comparing.Type: ApplicationFiled: June 21, 2010Publication date: January 6, 2011Applicant: TVU NETWORKS CORPORATIONInventor: Paul Shen
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Publication number: 20100276710Abstract: An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.Type: ApplicationFiled: July 12, 2010Publication date: November 4, 2010Applicant: UNITED STATES GOVERNMENT AS REPRESENTED BY THE SECRETARY OF THE ARMYInventors: Anand Venktesh Sampath, Charles J. Collins, Gregory Alan Garrett, H. Paul Shen, Michael Wraback
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Patent number: 7812366Abstract: An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.Type: GrantFiled: March 15, 2006Date of Patent: October 12, 2010Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Anand Venktesh Sampath, Charles J. Collins, Gregory Alan Garrett, H. Paul Shen, Michael Wraback
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Publication number: 20100187550Abstract: In a preferred embodiment, a light emitting device comprising: a polar template; a p-type layer grown on the polar template; the p-type layer having a first polarization vector; the first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a second polarization vector; the second polarization vector having a second projection relative to said growth direction that is larger than the first projection of the first polarization vector for the p-type layer; the n-type layer and p-type layer forming an interface; whereby the first polarization vector in the p-layer and second polarization vector in the n-layer create a discontinuity at the interface resulting in a negative charge appearing at the interface.Type: ApplicationFiled: May 7, 2009Publication date: July 29, 2010Applicant: U.S. Government as represented by the Secretary of the ArmyInventors: MEREDITH L. REED, MICHAEL WRABACK, PAUL SHEN
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Publication number: 20100006780Abstract: A method and device for generating terahertz radiation comprising a polar crystal material layer operative to emit terahertz radiation; the polar crystal material layer comprising a plurality of stacking faults; the stacking faults lying substantially perpendicular to the polar axis and forming boundaries at which the internal electric polarization terminates leading to charges accumulating at the boundaries, and creation of internal electric fields oriented along the polar axis; a pulsed radiation source for creating photogenerated carriers in the polar crystal material; whereby the photogenerated carriers accelerate in the internal electric fields associated with the termination of the internal electric polarization by the stacking faults to thereby generate terahertz radiation.Type: ApplicationFiled: May 5, 2009Publication date: January 14, 2010Applicant: U.S. Government as represented by the Secretary of the ArmyInventors: GRACE D. METCALFE, MICHAEL WRABACK, PAUL SHEN
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Publication number: 20070204321Abstract: The present invention relates to broadcasting/multicasting of media content over a communication network using shared bandwidth available from peer-to-peer networking. The system of the present invention includes a plurality of broadcast devices, a plurality of receiving devices, a plurality of databases, and a control center. The control center is the central nerve of the network, and provides a number of services, including but not limited to channel control, ad insertion, conditional access, program guide services, and the like. The broadcast device converts media content, which can be television, radio, and other data, received from various content providers, into digital data packets, having a suitable format for transmission over the Internet. Each receiving device will request the relevant packets, decode the received packets, and display or present the media content contained in the packets via an associated device.Type: ApplicationFiled: February 9, 2007Publication date: August 30, 2007Applicant: TVU Networks CorporationInventors: Paul Shen, Jay Shen
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Publication number: 20060169970Abstract: Methods and devices for creating an anisotropic strain in a semiconductor quantum well structure to induce anisotropy thereof are disclosed herein. Initially, a substrate is provided, and a quantum well structure formed upon the substrate. A first crystalline layer (e.g., a GaAs layer) having a first crystalline phase can then be deposited upon the quantum well structure. Thereafter, a second crystalline layer (e.g., a GaN layer) having a second crystalline phase and a thickness thereof can be formed upon the first crystalline layer to thereby induce an anisotropic strain in the quantum well structure to produce a quantum well device thereof. Additionally, the second crystalline layer (e.g., GaN) can be formed from a transparent material and utilized as an anti-reflection layer. By properly choosing the thickness of the second crystalline layer (e.g., a GaN layer), a desired anisotropic strain as well as a desired anti-reflection wavelength can be achieved.Type: ApplicationFiled: February 3, 2005Publication date: August 3, 2006Inventors: Michael Wraback, Mitra Dutta, Paul Shen
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Publication number: 20060088284Abstract: The present invention provides systems and methods for automating the conversion of digital images from a first storage media used by digital cameras to a second storage media used by computers and video playback devices. The conversion can be performed by a self-contained kiosk which detects the insertion of the first storage media containing the images in a first format. A processor at the kiosk converts the images into a second format (e.g., one that is compatible with video playback devices such as a DVD player). The images may then be copied to and stored on a second storage media in both the first (original) format and the second format. The second storage media is then dispensed from the kiosk. The resulting second storage media is compatible with video playback devices and serves as a master negative.Type: ApplicationFiled: October 26, 2004Publication date: April 27, 2006Inventors: Paul Shen, Edward Krause, Chong Lee
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Patent number: 6476596Abstract: A terahertz electromagnetic energy detector comprises a (100) oriented multiple quantum well thermally bonded to a first transparent substrate having a direction dependent thermal coefficient of expansion such that this coefficient matches the thermal coefficient of expansion of MQW in one direction but different form the direction-dependent thermal coefficient of expansion of the MQW in a perpendicular direction. The resultant internal thermally induced anisotropic strain leads to a polarization dependence of the optical absorption that is strongest near the lowest heavy-hole and light-hole exciton peaks. A second transparent substrate is placed beneath the first transparent substrate and is oriented so that its thermal coefficients of expansion act in a direction perpendicular to those of the first transparent substrate so that the accumulated phase retardation of the optical wave associated with birefringence of the substrate is effectively cancelled.Type: GrantFiled: December 6, 1999Date of Patent: November 5, 2002Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Michael Wraback, Paul Shen, Mitra Dutta