Abstract: An optical fiber pay-off system includes a draw spool around which an optical fiber is wound and defining a longitudinal axis; a pay-off arm movable parallel to the longitudinal axis and engaged with a pay-off portion of the optical fiber; a controller configured to receive first and second position signals and instructs the pay-off arm to selectively move in a first direction and in an opposite second direction; first and second proximity sensors mounted on the pay-off arm; a tilting support rotatably mounted on the pay-off arm. The system further includes an activation body fixed to the tilting support and extending between the first and second proximity sensors to be selectively detected by the sensors according to positions assumed by the tilting support. The system further includes first and second contacts fixed to the tilting support and defining an intermediate space in which the pay-off portion can move.

Abstract: A shot-peen forming system includes a shot-sourcing chamber and a plurality of conduits, each having a first end and a second end. The first ends are coupled to the shot-sourcing chamber for receiving a portion of shot. A plurality of peen-forming jets are coupled to the second end of a respective one of the plurality of conduits. The plurality of jets are each adapted to fire shot in one of a plurality of predetermined directions to simultaneously deliver shot to a workpiece. An omnidirectional shot peening delivery system includes a plurality of nozzles positioned for shot peening from a plurality of angles, respectively. A shot distributor is adapted to receive shot through an inlet and distribute shot to the plurality of nozzles, and a workpiece holder is adapted to constrain a workpiece for receiving shot from the plurality of nozzles simultaneously to provide conformity during shot-peen forming.

Abstract: The invention relates to a method for controlling rotation of a winding spool onto which an optical fiber is wound in a proof-testing machine. The optical fiber is guided in the proof-testing machine at a given line speed from an input pulling device to an output pulling device and then to the spool. The input and output pulling device is arranged to subject the optical fiber to a predetermined tensile stress. The method includes upon detection of a break between an output point (A) of the input pulling device and between an input point (B) of the output pulling device, a step of controlling the rotational speed of the spool to bring it to a complete stop; and a step of passing the optical fiber between an output point (C) of the output pulling device and an input point (D) of the winding spool in a fiber accumulation zone adapted to accumulate a predetermined fiber length preventing an fiber broken end resulting from the break going beyond the input point (D) of the winding spool.

Abstract: A shot-peen forming system includes a shot-sourcing chamber and a plurality of conduits, each having a first end and a second end. The first ends are coupled to the shot-sourcing chamber for receiving a portion of shot. A plurality of peen-forming jets are coupled to the second end of a respective one of the plurality of conduits. The plurality of jets are each adapted to fire shot in one of a plurality of predetermined directions to simultaneously deliver shot to a workpiece. An omnidirectional shot peening delivery system includes a plurality of nozzles positioned for shot peening from a plurality of angles, respectively. A shot distributor is adapted to receive shot through an inlet and distribute shot to the plurality of nozzles, and a workpiece holder is adapted to constrain a workpiece for receiving shot from the plurality of nozzles simultaneously to provide conformity during shot-peen forming.

Abstract: The invention relates to a method for controlling rotation of a winding spool (30) onto which an optical fiber (100) is wound in a proof-testing machine, the optical fiber being guided in the proof-testing machine at a given line speed from an input pulling device (10) to an output pulling device (20), then to the spool (30), the input and output pulling device being arranged to subject the optical fiber to a predetermined tensile stress, the method comprising: upon detection of a break between an output point (A) of the input pulling device and between an input point (B) of the output pulling device, a step of controlling the rotational speed of the spool to bring it to a complete stop; —a step of passing the optical fiber between an output point (C) of the output pulling device and an input point (D) of the winding spool in a fiber accumulation zone (90) adapted to accumulate a predetermined fiber length preventing an fiber broken end resulting from the break going beyond the input point (D) of the winding

Abstract: A semiconductor wafer having no photoresist craters at the completion of a two-step post-apply resist bake (soft bake) in the fabrication of an integrated circuit. A process and method for soft baking the semiconductor wafer so that photoresist layers are free of surface voids or craters. The semiconductor wafer is coated with resist and then baked at both a low-bake temperature and a high-bake temperature. It is theorized that the lower temperature bake either hardens the resist layer before trapped air expands through the resist or displaces the trapped air while the resist layer remains fluid and returns to its conformal shape.

Abstract: In general, the system provides for soft baking a semiconductor wafer so that photoresist layers on the wafer are free of surface voids or craters. In particular, the system provides for manufacturing a semiconductor wafer having no photoresist craters at the completion of a two-step post-apply resist bake (soft bake) in the fabrication of an integrated circuit. In the system, the semiconductor wafer is coated with resist and then baked at both a low-bake temperature and a high-bake temperature. It is theorized that the lower temperature bake either hardens the resist layer before trapped air expands through the resist or displaces the trapped air while the resist layer remains fluid and returns to its conformal shape.

Abstract: A semiconductor substrate undergoing processing to fabricate integrated circuit devices thereon is spun about a rotational axis while introducing liquid onto a surface of the substrate. An annular-shaped sheet of liquid is formed on the surface, the sheet of liquid having an inner diameter defining a liquid-free void. The size of a diameter of the void is reduced by manipulation of the annular-shaped sheet of liquid. The void may then be enlarged until the surface is substantially dry. The annular-shaped sheet of liquid may be formed and altered by selectively moving a contact area on the surface of the substrate on which the liquid is introduced. Systems for processing a substrate and configured to deposit and manipulate a sheet of liquid thereon are also disclosed.

Abstract: An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.

Abstract: An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.

Abstract: An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.

Abstract: Wafer holder cleaning devices, systems and methods that are capable of removing contaminants from a wafer holder. An embodiment includes a particle removal surface on the cleaning device. An embodiment of the surface is a brush. An embodiment includes moving the surface into contact with the wafer holder. An embodiment includes moving the surface into a close, non-contacting relationship to the wafer holder. An embodiment includes a vacuum removing the particles from the wafer holder. In an embodiment, the wafer holder is a spindle chuck. In an embodiment, the spindle chuck is in a fabrication station. In an embodiment, one of the cleaning device and wafer holder rotates.

Abstract: An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.

Abstract: A device and method for improving the uniformity of resist layers. The device includes a rotatable substrate support, a resist supply, a control fluid supply and a controller. In operation, the placement of a control fluid is varied locally to promote a localized change in a rate of evaporation of the deposited resist to form a substantially uniform thickness of the deposited resist layer. The control fluid supply includes a pressure source, a conduit and a discharge orifice such that control fluid impinges onto a localized portion of the deposited resist such that thickness variations that would otherwise occur across portions of the deposited resist are avoided or minimized.

Abstract: Wafer holder cleaning devices, systems and methods that are capable of removing contaminants from a wafer holder. An embodiment includes a particle removal surface on the cleaning device. An embodiment of the surface is a brush. An embodiment includes moving the surface into contact with the wafer holder. An embodiment includes moving the surface into a close, non-contacting relationship to the wafer holder. An embodiment includes a vacuum removing the particles from the wafer holder. In an embodiment, the wafer holder is a spindle chuck. In an embodiment, the spindle chuck is in a fabrication station. In an embodiment, one of the cleaning device and wafer holder rotates.

Abstract: Stepper and/or scanner machines including cleaning devices and methods for cleaning stepper and/or scanner machines are disclosed herein. In one embodiment, a stepper and/or scanner machine includes a housing, an illuminator, a lens, a workpiece support, a cleaning device for removing contaminants from the workpiece support, and a stage carrying the workpiece support. The stage and/or cleaning device is movable to selectively position the workpiece support proximate to the cleaning device. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 C.F.R. § 1.72(b).

Abstract: Stepper and/or scanner machines including cleaning devices and methods for cleaning stepper and/or scanner machines are disclosed herein. In one embodiment, a stepper and/or scanner machine includes a housing, an illuminator, a lens, a workpiece support, a cleaning device for removing contaminants from the workpiece support, and a stage carrying the workpiece support. The stage and/or cleaning device is movable to selectively position the workpiece support proximate to the cleaning device. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: In general, the system provides for soft baking a semiconductor wafer so that photoresist layers on the wafer are free of surface voids or craters. In particular, the system provides for manufacturing a semiconductor wafer having no photoresist craters at the completion of a two-step post-apply resist bake (soft bake) in the fabrication of an integrated circuit. In the system, the semiconductor wafer is coated with resist and then baked at both a low-bake temperature and a high-bake temperature. It is theorized that the lower temperature bake either hardens the resist layer before trapped air expands through the resist or displaces the trapped air while the resist layer remains fluid and returns to its conformal shape.

Abstract: A device and method for improving the uniformity of resist layers. The method includes controlling the evaporation of solvent from a deposited resist layer by impinging a control fluid onto a deposited resist layer. Optional sensing of flow parameters and other environmental conditions (such as temperature or humidity) adjacent the deposited resist layer, as well as determining whether a deviation exists between the sensed parameter(s) and a predetermined reference amount, and adjusting the appropriate parameter(s) to reduce the deviation if such deviation exists could also be performed. The device may also include a rotatable substrate support that can be used in conjunction with the control fluid supply.

Abstract: A semiconductor wafer having no photoresist craters at the completion of a two-step post-apply resist bake (soft bake) in the fabrication of an integrated circuit. A process and method for soft baking the semiconductor wafer so that photoresist layers are free of surface voids or craters. The semiconductor wafer is coated with resist and then baked at both a low-bake temperature and a high-bake temperature. It is theorized that the lower temperature bake either hardens the resist layer before trapped air expands through the resist or displaces the trapped air while the resist layer remains fluid and returns to its conformal shape.