Patents by Inventor Paul Siffert

Paul Siffert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for the production of Cd XTe semiconductor crystals with high resistivity and resulting crystalline material
    Patent number: 7067008
    Abstract: Process for the production of semiconductor crystals with high resistivity of the CdXTe type, wherein X=Zn, Se, ZnSe or 0, characterized in that it consists in carrying out a multiple doping with iron and with at least one second doping element selected from the group formed by the elements of group III of the periodic chart of the elements.
    Type: Grant
    Filed: March 5, 2003
    Date of Patent: June 27, 2006
    Assignee: Eurorad 2-6 SA
    Inventors: Anne Kazandjian, Jean-Marie Koebel, Paul Siffert
  • Process for the production of CdXTe semiconductor crystals with high resistivity and resulting crystalline material
    Publication number: 20030209184
    Abstract: Process for the production of semiconductor crystals with high resistivity of the CdXTe type, wherein X═Zn, Se, ZnSe or 0, characterized in that it consists in carrying out a multiple doping with iron and with at least one second doping element selected from the group formed by the elements of group III of the periodic chart of the elements.
    Type: Application
    Filed: March 5, 2003
    Publication date: November 13, 2003
    Inventors: Anne Kazandjian, Jean-Marie Koebel, Paul Siffert
  • Process for doping semiconductors
    Patent number: 4187124
    Abstract: A process and apparatus for doping a substrate by ion implantation or discharge. The process comprises the steps of maintaining an electric discharge in an evacuated enclosure containing a gaseous compound of a dopant for creating ions of said dopant; extracting and accelerating a beam of said ions from said atmosphere toward said substrate under a voltage selected for achieving a predetermined doping profile; and circulating said substrate transversely to said beam.
    Type: Grant
    Filed: March 15, 1978
    Date of Patent: February 5, 1980
    Assignee: Agence Nationale de Valorisation de la Recherche (ANVAR)
    Inventors: Jean-Claude Muller, Jean-Pierre Ponpon, Joseph Kurek, Paul Siffert