Patents by Inventor Paul Simon PONTIN
Paul Simon PONTIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11848348Abstract: Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.Type: GrantFiled: January 5, 2021Date of Patent: December 19, 2023Assignee: Meridian Innovation Pte LtdInventors: Piotr Kropelnicki, Ilker Ender Ocak, Paul Simon Pontin
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Publication number: 20210159263Abstract: A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.Type: ApplicationFiled: January 25, 2021Publication date: May 27, 2021Inventors: Wan Chia ANG, Piotr KROPELNICKI, Ilker Ender OCAK, Paul Simon PONTIN
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Publication number: 20210126038Abstract: Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.Type: ApplicationFiled: January 5, 2021Publication date: April 29, 2021Inventors: Piotr KROPELNICKI, Ilker Ender OCAK, Paul Simon PONTIN
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Patent number: 10937824Abstract: Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.Type: GrantFiled: December 18, 2018Date of Patent: March 2, 2021Assignee: Meridian Innovation Pte LtdInventors: Piotr Kropelnicki, Ilker Ender Ocak, Paul Simon Pontin
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Patent number: 10923525Abstract: A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.Type: GrantFiled: March 5, 2020Date of Patent: February 16, 2021Assignee: Meridian Innovation Pte LtdInventors: Wan Chia Ang, Piotr Kropelnicki, Ilker Ender Ocak, Paul Simon Pontin
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Patent number: 10903262Abstract: Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.Type: GrantFiled: July 21, 2019Date of Patent: January 26, 2021Assignee: Meridian Innovation Pte LtdInventors: Piotr Kropelnicki, Ilker Ender Ocak, Paul Simon Pontin
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Publication number: 20200203417Abstract: A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.Type: ApplicationFiled: March 5, 2020Publication date: June 25, 2020Inventors: Wan Chia ANG, Piotr KROPELNICKI, Ilker Ender OCAK, Paul Simon PONTIN
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Publication number: 20190341419Abstract: Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.Type: ApplicationFiled: July 21, 2019Publication date: November 7, 2019Inventors: Piotr KROPELNICKI, Ilker Ender OCAK, Paul Simon PONTIN
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Patent number: 10403674Abstract: Device and method of forming the devices are disclosed. The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectric membrane in the sensor region, forming a transistor in the transistor region and forming a micro-electrical mechanical system (MEMS) component on the dielectric membrane in the sensor region. The method continues by forming a back-end-of-line (BEOL) dielectric having a plurality of interlayer dielectric (ILD) layers with metal and via levels disposed on the substrate for interconnecting the components of the device. The metal lines in the metal levels are configured to define an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.Type: GrantFiled: July 12, 2017Date of Patent: September 3, 2019Assignee: Meridian Innovation Pte LtdInventors: Piotr Kropelnicki, Ilker Ender Ocak, Paul Simon Pontin
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Publication number: 20190148424Abstract: Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.Type: ApplicationFiled: December 18, 2018Publication date: May 16, 2019Inventors: Piotr KROPELNICKI, Ilker Ender OCAK, Paul Simon PONTIN
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Patent number: 10199424Abstract: Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.Type: GrantFiled: July 19, 2017Date of Patent: February 5, 2019Assignee: MERIDIAN INNOVATION PTE LTDInventors: Piotr Kropelnicki, Ilker Ender Ocak, Paul Simon Pontin
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Publication number: 20190027522Abstract: Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.Type: ApplicationFiled: July 19, 2017Publication date: January 24, 2019Inventors: Piotr KROPELNICKI, Ilker Ender OCAK, Paul Simon PONTIN
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Publication number: 20190019838Abstract: Device and method of forming the devices are disclosed. The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectric membrane in the sensor region, forming a transistor in the transistor region and forming a micro-electrical mechanical system (MEMS) component on the dielectric membrane in the sensor region. The method continues by forming a back-end-of-line (BEOL) dielectric having a plurality of interlayer dielectric (ILD) layers with metal and via levels disposed on the substrate for interconnecting the components of the device. The metal lines in the metal levels are configured to define an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.Type: ApplicationFiled: July 12, 2017Publication date: January 17, 2019Inventors: Piotr KROPELNICKI, Ilker Ender OCAK, Paul Simon PONTIN