Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a first non-conductive layer over a top side a semiconductor die and patterning the first non-conductive layer to form a collar structure surrounding an opening exposing a top surface of a bond pad. A second non-conductive layer is formed over the first non-conductive layer and exposed portions of the top side of the semiconductor die. The second non-conductive layer is different from the first non-conductive layer. The second non-conductive layer is patterned to expose the top surface of the bond pad and inner sidewalls of the of the collar structure surrounding the opening such that the second non-conductive layer does not contact the bond pad. A metal redistribution layer is formed over the second non-conductive layer and exposed top surface of the bond pad.

Abstract: A semiconductor device may include a semiconductor substrate and an isolation structure including a first dielectric layer formed over the semiconductor substrate, the first dielectric layer including one or more air gaps, and a first conductive structure formed on the dielectric layer, the conductive structure having a lower surface that faces the semiconductor substrate. Respective air gaps of the one or more air gaps of the first dielectric layer each may be disposed directly between corners of the lower surface of the conductive structure and the semiconductor substrate.

Abstract: An electronic device substrate with a substantially planar surface formed from an electrically non-conductive material is provided with one or more metalized pads on the substantially planner surface. Each of the one or more metalized pads is surrounded by and coplanar with the first electrically nonconductive material along an outer boundary of the metalized pad. The metalized pad is patterned such that portions of the metalized pad form metalized fingers that extend radially from the outer boundary of the metalized pad in an interdigitated arrangement with the first electrically nonconductive material. The metalized pad has a solderable surface.

Abstract: An electronic device substrate with a substantially planar surface formed from an electrically non-conductive material is provided with one or more metalized pads on the substantially planner surface. Each of the one or more metalized pads is surrounded by and coplanar with the first electrically nonconductive material along an outer boundary of the metalized pad. The metalized pad is patterned such that portions of the metalized pad form metalized fingers that extend radially from the outer boundary of the metalized pad in an interdigitated arrangement with the first electrically nonconductive material. The metalized pad has a solderable surface.

Abstract: Embodiments are provided for package semiconductor devices, each device including: a low stress pad structure comprising: a dielectric layer, a seed layer having: a center section, and a ring section formed around the center section and over a top surface of the dielectric layer, wherein the ring section of the seed layer includes a set of elongated openings through which a portion of the top surface of the dielectric layer is exposed, and a metal layer having: an inner section formed over a top surface of the center section of the seed layer, and an outer section formed over a top surface of the ring section of the seed layer, wherein a bottom surface of the outer section of the metal layer directly contacts the portion of the top surface of the dielectric layer exposed through the set of elongated openings.

Abstract: Embodiments are provided for package semiconductor devices, each device including: a low stress pad structure comprising: a dielectric layer, a seed layer having: a center section, and a ring section formed around the center section and over a top surface of the dielectric layer, wherein the ring section of the seed layer includes a set of elongated openings through which a portion of the top surface of the dielectric layer is exposed, and a metal layer having: an inner section formed over a top surface of the center section of the seed layer, and an outer section formed over a top surface of the ring section of the seed layer, wherein a bottom surface of the outer section of the metal layer directly contacts the portion of the top surface of the dielectric layer exposed through the set of elongated openings.

Abstract: Embodiments are provided for a multi-die packaged semiconductor device including: a panel of embedded dies including a plurality of radio frequency (RF) dies, wherein each RF die includes RF front-end circuitry, each RF die has an active side that includes a plurality of pads, each RF die has a back side exposed in a back side of the panel; a plurality of antenna connectors formed on a subset of the plurality of pads of each RF die; and an array of antennas formed over a front side of the panel and connected to the plurality of antenna connectors.

Abstract: Embodiments are provided for a multi-die packaged semiconductor device including: a panel of embedded dies including a plurality of radio frequency (RF) dies, wherein each RF die includes RF front-end circuitry, each RF die has an active side that includes a plurality of pads, each RF die has a back side exposed in a back side of the panel; a plurality of antenna connectors formed on a subset of the plurality of pads of each RF die; and an array of antennas formed over a front side of the panel and connected to the plurality of antenna connectors.

Abstract: A structure is disclosed for growing semiconductor surfaces. A substrate such as a single crystal silicon substrate is treated by electrical biasing in the presence of a carbon-containing plasma to cause nucleation of the surface. By direct observation using atomic force microscopy (AFM), a nucleated surface consisting of a thin film of mutually parallel, quadrilateral carbon-containing platelets was seen to develop on the substrate. An optimum nucleated surface was determined to be substantially covered with such platelets whose slope relative to the substrate was less than 5.degree.. Such a surface can serve as a template for growing semiconductor films, particularly of diamond, of well defined structure.

Abstract: A method is disclosed for producing an oriented diamond film on a single crystal silicon substrate which comprises preconditioning the surface of the substrate by exposing the surface of the substrate to a carbon-containing plasma, subjecting the preconditioned surface to electrical bias to effect nucleation of the substrate surface for oriented diamond crystal growth while monitoring the completion of nucleation over the surface of the substrate and depositing crystalline diamond on the nucleated surface from a carbon-containing plasma. The resulting structure comprises a crystalline diamond film on the silicon substrate characterised by oriented columnar diamond crystals which form a substantially uniform tessellated pattern. In practice, the columnar crystals normally have a generally quadrilateral shape whose sides are mutually aligned.