Abstract: Lighting components and fixtures having optical elements with multiple portions are disclosed. A wavelength conversion element can be mounted over a source, the wavelength conversion element including wavelength conversion material remote to the source, such as on or near the outside surface of a conversion element. The element can be filled with a transparent and thermally conductive material which thermally couples the remote conversion material and the source, aiding in thermal dissipation and improving fixture efficacy. An optical element can be formed by using an embossing plate to form a first portion, partially curing the first portion, removing the embossing plate, and introducing material to form a second portion.

Abstract: Lighting components and fixtures having optical elements with multiple portions are disclosed. A wavelength conversion element can be mounted over a source, the wavelength conversion element including wavelength conversion material remote to the source, such as on or near the outside surface of a conversion element. The element can be filled with a transparent and thermally conductive material which thermally couples the remote conversion material and the source, aiding in thermal dissipation and improving fixture efficacy. An optical element can be formed by using an embossing plate to form a first portion, partially curing the first portion, removing the embossing plate, and introducing material to form a second portion.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.

Abstract: Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

Abstract: The present invention provides nitride semiconductors having a moderate density of basal plane stacking faults and a reduced density of threading dislocations, various products based on, incorporating or comprising the nitride semiconductors, including without limitation substrates, template films, templates, heterostructures with or without integrated substrates, and devices, and methods for fabrication of templates and substrates comprising the nitride semiconductors.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.

Abstract: Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13 } gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.

Abstract: Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

Abstract: Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.

Abstract: Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

Abstract: The present invention provides nitride semiconductors having a moderate density of basal plane stacking faults and a reduced density of threading dislocations, various products based on, incorporating or comprising the nitride semiconductors, including without limitation substrates, template films, templates, heterostructures with or without integrated substrates, and devices, and methods for fabrication of templates and substrates comprising the nitride semiconductors.

Abstract: Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.

Abstract: Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.