Abstract: A power semiconductor device (2) has a first main electrode (S) for coupling to a first supply line (3), a second main electrode (D) coupled to a first terminal (4) for connection via a load (L) to a second voltage supply line (5) and an insulated gate electrode (G) coupled to a control terminal (GT) for supplying a gate control signal to enable conduction of the power semiconductor device (2). An open-circuit detection arrangement is integrated with the power semiconductor device (2) for providing an indication that a load (L) coupled to the power semiconductor device (2) is open-circuited. The detection arrangement has a reference current (Ir) providing arrangement (7, R3, R4, R7, Q1, Q2) and a current deriving arrangement (Q3, Q4) for deriving a current (Id) dependent on the voltage at the second main electrode (D).

Abstract: A power semiconductor device (e.g. MOSFET or IGBT) has a temperature sensing means in the form of thin-film sensing element (D1) on a first insulating layer (2) on the device body (10). The sensing element is preferably a reverse-biased p-n junction thin-film polycrystalline silicon diode (D1). In order to screen the sensitive element (D1) from electrical noise, an electrically conductive layer (4) is present on a second electrically insulating layer (5) over the thin-film element (D1) and forms part of an electrical screen (3,4) which is present over and under the thin-film element (D1). This electrical screen (3,4) also comprises a semiconductive region (3) underlying the thin-film element (D1), with the overlying conductive layer (4) electrically connected to the semiconductive region (3) at a window (6) in the insulating layers (2,5).

Abstract: A temperature sensing circuit (100) for sensing the temperature of an active semiconductor device, for example, a power MOSFET (11) of a semiconductor body (10). The circuit has a first temperature sensing device (R1R2) provided on the semiconductor body at a first position (P.sub.1) adjacent a periphery (12) of the active semiconductor device (11), a second temperature sensing device (R3,R4) provided on the semiconductor body at a second position (P.sub.2) further from the periphery of the active semiconductor device than the first position. An arrangement, for example, a comparator responsive to the first and second temperature sensing devices provides a control signal to switch off the active semiconductor device (11) when the difference in the temperature sensed by the first and second sensing devices reaches a predetermined value.

Abstract: A power semiconductor device circuit has an insulated gate field effect power semiconductor device with first and second main electrodes and a gate electrode. A gate control circuit provides a conductive path between the gate electrode and a gate voltage supply terminal. The gate control circuit has a resistance coupled between the gate electrode and the gate voltage supply terminal. A switching device has first and second main electrodes coupled to the gate voltage supply terminal and the gate electrode, respectively, so that the main current path between the first and second main electrodes is coupled in parallel with the resistance, the switching device having a first non-conducting state and a second conducting state for providing, in the second conducting state, an additional resistance in parallel with the resistance.

Abstract: A semiconductor body (2) has first and second major surfaces (2c and 2d) with a first region (2b) of one conductivity type adjacent the first major surface (2c). An insulated gate field effect transistor (6) is formed within the first region (2c) and has source and drain electrodes (S and D) and an insulated gate electrode (G). At least one further component (R4) is coupled between the insulated gate electrode (G) of the insulated gate field effect transistor (6) and a gate input terminal (GT). The further region requires a second region (21) of the opposite conductivity type provided within the first region (2b) so that a region (26) of the further component (R4), the second region (21) and the first region (2b) form a parasitic bipolar transistor (B).

Abstract: A semiconductor switch includes a power FET and a temperature sensor for providing a control signal to switch off the power FET when it reaches a predetermined thermal condition, such as a particular temperature. The power FET consists of a semiconductor body having a first region (13) of a first conductivity type adjacent one major surface (10a) thereof, and a plurality of cells (11). Each such cell has a second region (32) of the second (opposite) conductivity type provided within the first region (13), a third region (33) of the first conductivity type formed within the second region (32), and an insulated gate overlying a conduction channel in the second region (32) between the first and third regions (33 and 13). The temperature sensor (2) is formed within the semiconductor body (10) and consists of a number of further cells (11') of the same structure as the cells (11) of the power FET.

Abstract: A temperature responsive circuit (100) has a temperature sensitive device (1), a first current source (2) connected in series with the temperature sensitive device for generating a given current (I.sub.1) and a detector (3) having an output (4) for providing a voltage signal (V.sub.4) which varies with the temperature sensed by the temperature sensitive device (1). A current-limiting arrangement (6) is connected to the output (4) and includes a current mirror having first and second similar transistors (Q11 and Q7) with the main current path between first and second electrodes (S.sub.7 and d.sub.7) of the second transistor (Q7) providing an output current I.sub.out of the circuit. A second current source (Q10 and Q12) provides a current for the current mirror which is related to the given current (I.sub.1) when the voltage at the output of the detector (3) represents a temperature below a critical temperature (T.sub.