Patents by Inventor Paul Tchertchian
Paul Tchertchian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9330877Abstract: Logic devices are provided in multiple sub-collector and sub-emitter microplasma devices formed in thin and flexible, or inflexible, semiconductor materials. Logic operations are provided with one of a plurality of microplasmas forming sub-collectors with a common emitter, or a common collector plasma with a plurality of sub-emitter regions in a solid state semi-conductor pn-junction, and generating a logic output from an electrode, based upon electrode inputs to two other electrodes.Type: GrantFiled: June 1, 2015Date of Patent: May 3, 2016Assignee: The Board of Trustees of the University of IllinoisInventors: J. Gary Eden, Paul A. Tchertchian, Clark J. Wagner, Dane J. Sievers, Thomas J. Houlahan, Benben Li
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Patent number: 9263558Abstract: A hybrid plasma semiconductor device has a thin and flexible semiconductor base layer. An emitter region is diffused into the base layer forming a pn-junction. An insulator layer is upon one side the base layer and emitter region. Base and emitter electrodes are isolated from each other by the insulator layer and electrically contact the base layer and emitter region through the insulator layer. A thin and flexible collector layer is upon an opposite side of the base layer. A microcavity is formed in the collector layer and is aligned with the emitter region. Collector electrodes are arranged to sustain a microplasma within the microcavity with application of voltage to the collector electrodes. A depth of the emitter region and a thickness of the base layer are set to define a predetermined thin portion of the base layer as a base region between the emitter region and the microcavity. Microplasma generated in the microcavity serves as a collector.Type: GrantFiled: August 5, 2014Date of Patent: February 16, 2016Assignee: The Board of Trustees of the University of IllinoisInventors: J. Gary Eden, Paul A. Tchertchian, Clark J. Wagner, Dane J. Sievers, Thomas J. Houlahan, Benben Li
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Patent number: 9184341Abstract: Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). A preferred device is a hybrid plasma semiconductor device having base, emitting and microcavity collector regions formed on a single side of a device layer. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.Type: GrantFiled: July 14, 2014Date of Patent: November 10, 2015Assignee: The Board of Trustees of the University of IllinoisInventors: J. Gary Eden, Paul A. Tchertchian, Clark J. Wagner, Dane J. Sievers, Thomas J. Houlahan, Benben Li
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Publication number: 20150294831Abstract: Logic devices are provided in multiple sub-collector and sub-emitter microplasma devices formed in thin and flexible, or inflexible, semiconductor materials. Logic operations are provided with one of a plurality of microplasmas forming sub-collectors with a common emitter, or a common collector plasma with a plurality of sub-emitter regions in a solid state semi-conductor pn-junction, and generating a logic output from an electrode, based upon electrode inputs to two other electrodes.Type: ApplicationFiled: June 1, 2015Publication date: October 15, 2015Inventors: J. Gary Eden, Paul A. Tchertchian, Clark J. Wagner, Dane J. Sievers, Thomas J. Houlahan, Benben Li
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Publication number: 20140339677Abstract: A hybrid plasma semiconductor device has a thin and flexible semiconductor base layer. An emitter region is diffused into the base layer forming a pn-junction. An insulator layer is upon one side the base layer and emitter region. Base and emitter electrodes are isolated from each other by the insulator layer and electrically contact the base layer and emitter region through the insulator layer. A thin and flexible collector layer is upon an opposite side of the base layer. A microcavity is formed in the collector layer and is aligned with the emitter region. Collector electrodes are arranged to sustain a microplasma within the microcavity with application of voltage to the collector electrodes. A depth of the emitter region and a thickness of the base layer are set to define a predetermined thin portion of the base layer as a base region between the emitter region and the microcavity. Microplasma generated in the microcavity serves as a collector.Type: ApplicationFiled: August 5, 2014Publication date: November 20, 2014Inventors: J. Gary Eden, Paul A. Tchertchian, Clark J. Wagner, Dane J. Sievers, Thomas J. Houlahan, Benben Li
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Publication number: 20140319654Abstract: Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). A preferred device is a hybrid plasma semiconductor device having base, emitting and microcavity collector regions formed on a single side of a device layer. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.Type: ApplicationFiled: July 14, 2014Publication date: October 30, 2014Inventors: J. Gary Eden, Paul A. Tchertchian, Clark J. Wagner, Dane J. Sievers, Thomas J. Houlahan, Benben Li
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Patent number: 8816435Abstract: Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). Doped solid state semiconductor regions are in a thin flexible solid state substrate, and a flexible non conducting material defining a microcavity adjacent the semiconductor regions. The flexible non conducting material is bonded to the thin flexible solid state substrate, and at least one electrode is arranged with respect to said flexible substrate to generate a plasma in said microcavity, where the plasma will influence or perform a semiconducting function in cooperation with said solid state semiconductor regions. A preferred on-wafer device is formed on a single side of a silicon on insulator wafer and defines the collector (plasma cavity), emitter and base regions on a common side, which provides a simplified and easy to manufacture structure.Type: GrantFiled: July 19, 2011Date of Patent: August 26, 2014Assignee: The Board of Trustees of the University of IllinoisInventors: J. Gary Eden, Paul A. Tchertchian, Thomas J. Houlahan, Dane J. Sievers, Benben Li, Clark J. Wagner
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Patent number: 8674461Abstract: The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.Type: GrantFiled: July 16, 2013Date of Patent: March 18, 2014Assignee: The Board of Trustees of the University of IllinoisInventors: Paul A. Tchertchian, Clark J. Wagner, J. Gary Eden
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Publication number: 20130299909Abstract: The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.Type: ApplicationFiled: July 16, 2013Publication date: November 14, 2013Inventors: Paul A. Tchertchian, Clark J. Wagner, J. Gary Eden
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Patent number: 8525276Abstract: The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.Type: GrantFiled: June 17, 2010Date of Patent: September 3, 2013Assignee: The Board of Trustees of the University of CaliforniaInventors: Paul A. Tchertchian, Clark J. Wagner, J. Gary Eden
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Patent number: 8492744Abstract: Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is produced throughout the cavity between single or multiple pn junctions and a dielectric layer isolates the microplasma from the single or multiple pn junctions. Additional preferred embodiments are devices in which the spatial extent of the plasma itself or the n or p regions associated with a pn junction are altered by a third (control) electrode.Type: GrantFiled: October 29, 2010Date of Patent: July 23, 2013Assignees: The Board of Trustees of the University of Illinois, Acumen ScientificInventors: J. Gary Eden, Paul Tchertchian, Clark J. Wagner, Steve Solomon, Robert Ginn
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Patent number: 8442091Abstract: The invention provides microchannel lasers having a microplasma gain medium. Lasers of the invention can be formed in semiconductor materials, and can also be formed in polymer materials. In a microlaser of the invention, high density plasmas are produced in microchannels. The microplasma acts as a gain medium with the electrodes sustaining the plasma in the microchannel. Reflectors are used with the microchannel for obtaining optical feedback to obtain lasing in the microplasma gain medium in devices of the invention for a wide range of atomic and molecular species. Several atomic and molecular gain media will produce sufficiently high gain coefficients that reflectors (mirrors) are not necessary. Microlasers of the invention are based on microplasma generation in channels of various geometries. Preferred embodiment microlaser designs can be fabricated in semiconductor materials, such as Si wafers, by standard photolithographic techniques, or in polymers by replica molding.Type: GrantFiled: October 27, 2008Date of Patent: May 14, 2013Assignee: The Board of Trustees of the University of IllinoisInventors: Sung-Jin Park, J. Gary Eden, Paoyei Chen, Paul A. Tchertchian, Thomas M. Spinka
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Publication number: 20120104554Abstract: Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). Doped solid state semiconductor regions are in a thin flexible solid state substrate, and a flexible non conducting material defining a microcavity adjacent the semiconductor regions. The flexible non conducting material is bonded to the thin flexible solid state substrate, and at least one electrode is arranged with respect to said flexible substrate to generate a plasma in said microcavity, where the plasma will influence or perform a semiconducting function in cooperation with said solid state semiconductor regions. A preferred on-wafer device is formed on a single side of a silicon on insulator wafer and defines the collector (plasma cavity), emitter and base regions on a common side, which provides a simplified and easy to manufacture structure.Type: ApplicationFiled: July 19, 2011Publication date: May 3, 2012Applicant: The Board of Trustees of the University of IllinoisInventors: J. Gary Eden, Paul A. Tchertchian, Thomas J. Houlahan, Dane J. Sievers, Benben Li, Clark J. Wagner
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Publication number: 20110140073Abstract: Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is produced throughout the cavity between single or multiple pn junctions and a dielectric layer isolates the microplasma from the single or multiple pn junctions. Additional preferred embodiments are devices in which the spatial extent of the plasma itself or the n or p regions associated with a pn junction are altered by a third (control) electrode.Type: ApplicationFiled: October 29, 2010Publication date: June 16, 2011Applicant: The Board of Trustees of the University of IllinoisInventors: J. Gary Eden, Paul Tchertchian, Clark J. Wagner, Steve Solomon, Robert Ginn
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Publication number: 20110037102Abstract: The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.Type: ApplicationFiled: June 17, 2010Publication date: February 17, 2011Applicant: The Board of Trustees of the University of IllinoisInventors: Paul A. Tchertchian, Clark J. Wagner, J. Gary Eden
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Publication number: 20100296978Abstract: The invention provides microchannel lasers having a microplasma gain medium. Lasers of the invention can be formed in semiconductor materials, and can also be formed in polymer materials. In a microlaser of the invention, high density plasmas are produced in microchannels. The microplasma acts as a gain medium with the electrodes sustaining the plasma in the microchannel. Reflectors are used with the microchannel for obtaining optical feedback to obtain lasing in the microplasma gain medium in devices of the invention for a wide range of atomic and molecular species. Several atomic and molecular gain media will produce sufficiently high gain coefficients that reflectors (mirrors) are not necessary. Microlasers of the invention are based on microplasma generation in channels of various geometries. Preferred embodiment microlaser designs can be fabricated in semiconductor materials, such as Si wafers, by standard photolithographic techniques, or in polymers by replica molding.Type: ApplicationFiled: October 27, 2008Publication date: November 25, 2010Inventors: Sung-Jin Park, J. Gary Eden, Paoyei Chen, Paul A. Tchertchian, Thomas M. Spinka
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Patent number: 7615926Abstract: Microcavity plasma devices and arrays of microcavity plasma devices are provided that have a reduced excitation voltage. A trigger electrode disposed proximate to a microcavity reduce the excitation voltage required between first and second electrodes to ignite a plasma in the microcavity when gas(es) or vapor(s) (or combinations thereof) are contained within the microcavity. The invention also provides symmetrical microplasma devices and arrays of microcavity plasma devices for which current waveforms are the same for each half-cycle of the voltage driving waveform. Additionally, the invention also provides devices that have standoff portions and voids that can reduce cross talk. The devices are preferably also used with a trigger electrode.Type: GrantFiled: June 12, 2007Date of Patent: November 10, 2009Assignee: The Board of Trustees of the University of IllinoisInventors: J. Gary Eden, Sung-Jin Park, Paul A. Tchertchian, Seung Hoon Sung
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Publication number: 20080129185Abstract: Microcavity plasma devices and arrays of microcavity plasma devices are provided that have a reduced excitation voltage. A trigger electrode disposed proximate to a microcavity reduce the excitation voltage required between first and second electrodes to ignite a plasma in the microcavity when gas(es) or vapor(s) (or combinations thereof) are contained within the microcavity. The invention also provides symmetrical microplasma devices and arrays of microcavity plasma devices for which current waveforms are the same for each half-cycle of the voltage driving waveform. Additionally, the invention also provides devices that have standoff portions and voids that can reduce cross talk. The devices are preferably also used with a trigger electrode.Type: ApplicationFiled: June 12, 2007Publication date: June 5, 2008Inventors: J.Gary Eden, Sung-Jin Park, Paul A. Tchertchian, Seung Hoon Sung