Abstract: An integrated circuit includes a core region and an input-output (I/O) region which has an I/O slot and a voltage supply slot. First and second voltage supply buses and a bias voltage bus extend along the I/O region through the I/O slot and the voltage supply slot. A bias voltage generator is fabricated in the voltage supply slot and is electrically coupled between the first and second voltage supply buses. The bias voltage generator has a bias voltage output which is electrically coupled to the bias voltage bus. A buffer is fabricated in the I/O slot for interfacing with the core region. The buffer includes a bias voltage input which is electrically coupled to the bias voltage bus.

Abstract: An integrated circuit die includes a plurality of semiconductor cells and first and second power supply conductors. The power supply conductors have different relative polarities and are electrically coupled to the plurality of semiconductor cells. A power supply de-coupling capacitor is formed within the die and is electrically coupled between the first and second power supply conductors.

Abstract: Field-effect transistors are formed on a substrate having silicided elements including diffusion (source and drain) regions and polysilicon gates. The silicided surfaces of these elements have low ohmic resistance and are used to provide interconnection between contacts that are spaced from each other, thereby freeing routing areas for other interconnections. The diffusion regions of adjacent transistors have edges that face each other, and are formed with indentations which constitute portions of a substrate tap area. The low ohmic resistance of the silicided surfaces of the diffusion regions enables the substrate tap area to be cut out of the diffusion regions without degrading the electrical performance of the transistors, thereby providing a substantial reduction in the space required for the transistors on the substrate.

Abstract: A current reference circuit includes a first, current mirror transistor having a gate coupled to a first feedback node, a source coupled to a first supply terminal and a drain forming a first reference node. A second, current mirror transistor has a gate coupled to the first feedback node, a source coupled to the first supply terminal and a drain forming a second reference node. A third transistor has a gate coupled to a second feedback node, a source coupled to a second supply terminal and a drain coupled to the first reference node. A fourth transistor has a gate coupled to the second feedback node, a source coupled to the second supply terminal and a drain coupled to the second reference node. A first operational amplifier has a first input coupled to the first reference node, a second input coupled to a bias node and an output forming the first feedback node.

Abstract: A system and method for detecting the voltage level of a power supply signal and generating a notification signal to indicate when the supply voltage exceeds a minimum voltage that is programmable by a user. A programming signal, that allows for multiple voltages to be detected, is applied to the voltage detection system to generate a notification signal in response to the supply voltage attaining the minimum voltage indicated by the programming signal.