Abstract: The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium oxide both dispersed in an organic medium, wherein the paste is fireable at temperatures below 420° C. The paste is especially useful for forming electrodes on substrates such as glass or films, particularly electrochromic glass or films, that would be damaged by higher firing temperatures. The present invention is further directed to a device comprising an electrode formed from the paste composition and, in particular, to an electrochromic device comprising such an electrode.

Abstract: The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Ph-free Bi-based glass frit both dispersed in an organic medium, wherein the paste is fireable at temperatures below 420° C. The paste is especially useful for forming electrodes on substrates such as glass or films, particularly electrochromic glass or films, that would be damaged by higher firing temperatures. The present invention is further directed to a device comprising an electrode formed from the paste composition and, in particular, to an electrochromic device comprising such an electrode.

Abstract: The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium oxide both dispersed in an organic medium, wherein the paste is fireable at temperatures below 420° C. The paste is especially useful for forming electrodes on substrates such as glass or films, particularly electrochromic glass or films, that would be damaged by higher firing temperatures. The present invention is further directed to a device comprising an electrode formed from the paste composition and, in particular, to an electrochromic device comprising such an electrode.

Abstract: Disclosed is the use of carbon layers as barriers to prevent silver migration in circuitry crossovers, either over a bottom circuitry layer and/or beneath subsequent circuit layers.

Abstract: The present invention is directed to processes for ink jet printing of etchant or modifier materials for creating patterns, particularly for electronics and display applications. The present invention also relates to devices made using the processes.

Abstract: A method for fabricating semiconductor wafers as multiple-depth structure (i.e., having portions of varying height). The method includes patterning a first substrate and bonding a second substrate to the first. This process creates a subsurface patterned layer. Portions of the second substrate may then be etched, exposing the subsurface patterned layer for selective processing. For example, the layered structure may then be repeatedly etched to produce a multiple depth structure. Or, for example, exposed portions of the first substrate may have material added to them to create multiple-depth structures. This method of fabrication provides substantial advantages over previous methods.