Abstract: An apparatus includes a first processor that accesses memory according to a first clock frequency, a second processor that accesses memory according to a second clock frequency, and a memory device is configurable to selectively operate according to the first clock frequency or the second clock frequency. A memory controller enables dynamic configuration of organization of the memory device to allow a first portion of the memory device to be accessed by the first processor according to the first clock frequency and a second portion of the memory device to be accessed by the second processor according to the second clock frequency.

Abstract: A dual power rail word line driver for driving a word line of a memory array according to a predecode signal from a decoder powered by a first supply voltage is provided. A signal buffering unit is coupled between the word line and a node. A pull-down unit is coupled between the node and a ground. A pull-up unit is coupled between the node and a second supply voltage higher than or equal to the first supply voltage. The signal buffering unit provides a word line signal corresponding to the predecode signal to the memory array via the word line when the pull-down unit is turned on by the predecode signal and a first pulse signal and the pull-up unit is turned off by a second pulse signal. There is no level shifter on a critical timing path of the dual power rail word line driver.

Abstract: An apparatus includes a first processor that accesses memory according to a first clock frequency, a second processor that accesses memory according to a second clock frequency, and a memory device is configurable to selectively operate according to the first clock frequency or the second clock frequency. A memory controller enables dynamic configuration of organization of the memory device to allow a first portion of the memory device to be accessed by the first processor according to the first clock frequency and a second portion of the memory device to be accessed by the second processor according to the second clock frequency.

Abstract: A dual power rail word line driver for driving a word line of a memory array according to a predecode signal from a decoder powered by a first supply voltage is provided. A signal buffering unit is coupled between the word line and a node. A pull-down unit is coupled between the node and a ground. A pull-up unit is coupled between the node and a second supply voltage higher than or equal to the first supply voltage. The signal buffering unit provides a word line signal corresponding to the predecode signal to the memory array via the word line when the pull-down unit is turned on by the predecode signal and a first pulse signal and the pull-up unit is turned off by a second pulse signal. There is no level shifter on a critical timing path of the dual power rail word line driver.

Abstract: A method and circuit for optimally controlling memory array bit line precharge timing to increase memory frequency of operation by generating a precharge output (110) for memory array bit lines in response to the earliest asserted control input among precharge control inputs. A write precharge signal (218) early enables a write precharge operation by enabling the precharge signal (110) a delayed period after an enabling falling dock edge of clock (104), as indicated by a write precharge enable signal (210), and during a write cycle, as indicated by a write precharge trigger (212). Thereafter, a default precharge trigger (216) is enabled to ensure that write precharging operation continues for an extended and optimal duration. A read precharge trigger (214) enables precharging after a read operation by enabling the precharge signal (110) in close proximity to the disabling of read sense amplifiers within the memory array to enhance post-read precharging.