Abstract: A design structure. The design structure includes: a first set of FETs having a designed first Vt and a second set of FETs having a designed second Vt, the first Vt different from the second Vt; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit configured to generate a compare signal based on a performance measurement of the first monitor circuit and of the second monitor circuit; a control unit responsive to the compare signal and configured to generate a control signal regulator based on the compare signal; and an adjustable voltage regulator responsive to the control signal and configured to voltage bias wells of FETs of the second set of FETs, the value of the voltage bias applied based on the control signal.

Abstract: Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.

Abstract: In a first aspect, an inventive apparatus for imaging a chip on a wafer includes a combined diamond chip image and kerf image having a plurality of sloped sides. The combined diamond chip image and kerf image includes a diamond chip image comprising a plurality of chip image rows that are parallel to at least one diagonal of the diamond chip image, and includes a kerf image adjacent to the diamond chip image. The kerf image comprises at least one kerf image row that is parallel to the at least one diagonal of the diamond chip image. The apparatus further includes a blocking material extending from the combined diamond chip image and kerf image to at least a periphery of an exposure field of a stepper. In a second aspect the imaging apparatus comprises an n-sided polygon-shaped combined chip image and kerf image. Also provided are inventive methods of manufacturing chips, and wafers manufactured in accordance with the inventive methods.

Abstract: Disclosed are embodiments of a method and an associated first system for extending product life of a second system in the presence of phenomena that cause the exhibition of both performance degradation and recovery properties within system devices. The first system includes duplicate devices incorporated into the second system (e.g., on a shared bus). These duplicate devices are adapted to independently perform the same function within that second system. Reference signal generators, a reference signal comparator, a power controller and a state machine, working in combination, can be adapted to seamlessly switch performance of that same function within the second system between the duplicate devices based on a measurement of performance degradation to allow for device recovery. A predetermined policy accessible by the state machine dictates when and whether or not to initiate a switch.

Abstract: A method for increasing the manufacturing yield of field programmable gate arrays (FPGAS) or other programmable logic devices (PLDs). An FPGA or other PLD is formed in several sections, each of the sections having its own power bus and input/output connections. Each section of the FPGA or other PLD is tested to identify defects in the FPGA or other PLD. The FPGA or other PLD is sorted according to whether the section has an acceptable number of defects. An assigned unique number for the FPGA or other PLD chip or part identifies it as partially good. Software for execution and configuring the FPGA or other PLD may use the unique number for programming only the identified functional sections of the FPGA or other PLD. The result is an increase in yield as partially good FPGAs or other PLDs may still be utilized.

Abstract: A voltage island architecture wherein the source voltage of each voltage island can be independently turned on/off or adjusted during a scan-based test. The architecture includes a plurality of voltage islands (102, 104), each powered by a respective island source voltage (VDDI1, VDDI2), and a testing circuit (116), coupled to the voltage islands, and powered by a global source voltage (Vg) that is always on during test, wherein each island source voltage may be independently controlled (106, 108) during test.

Abstract: Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.

Abstract: A system and method of providing error detection and correction capability in an IC using redundant logic cells and an embedded field programmable gate array (FPGA). The system and method provide error correction (EC) to enable a defective logic function implemented within an IC chip design to be replaced, wherein at least one embedded FPGA is provided in the IC chip to perform a logic function. If a defective logic function is identified in the IC design, the embedded FPGA is programmed to correctly perform the defective logic function. All inputs in an input cone of logic of the defective logic function are identified and are directed into the embedded FPGA, such that the embedded FPGA performs the logic function of the defective logic function.

Abstract: The invention provides a method for providing an integrated circuit (6) having a substantially uniform density between parts (10, 12, 14 and 16) of the IC that are non-orthogonally angled. In particular, the invention provides fill tiling patterns (32, 34) oriented substantially parallel to electrical structure regardless of their angle. A method of electrical analysis based on this provision is also provided as is a related program product.

Abstract: Macro design techniques are disclosed for facilitating subsequent stage wiring across the macro. Whitespace areas within the macro are rearranged to accommodate the wiring. The rearrangement may take the form of physical rearrangement of the whitespace areas into routing tracks extending from one side of the macro to another; shielding using, for example, macro power bussing and/or macro wiring; routing power busses to the rearranged whitespace; and/or inserting active circuits with pins accessible to the wiring. In a preferred embodiment, active circuits are placed into rearranged macro whitespace during the design of subsequent stages. The rearrangement of the whitespace facilitates the wiring across the macro so that slew rate and path delay requirements of the subsequent stage wiring can be maintained, without excessive buffering or rerouting of wiring.

Abstract: An integrated circuit comprising: a parent terrain; and a hierarchal order of nested voltage islands within the parent terrain, each higher-order voltage island nested within a lower-order voltage island, each nested voltage island having the same hierarchal structure.