Abstract: Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have a flexible shunt bar which has one end coupled to the deformable plate, and the other end coupled to a contact on the second substrate. Upon activating the switch, the deformable plate urges the shunt bar against a second contact formed in the second substrate, thereby closing the switch. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium plated over a layer of gold. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate.

Abstract: A method for forming moveable features suspended over a substrate is described, wherein a cavity beneath the moveable feature is first formed using a liquid etchant applied through one or more release holes. After formation of the cavity, the outline of the moveable feature is formed using a dry etch process. Since the moveable feature is free to move upon its formation using the dry etch process, no stiction issues arise using the systems and methods described here.

Abstract: Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have a flexible shunt bar which has one end coupled to the deformable plate, and the other end coupled to a contact on the second substrate. Upon activating the switch, the deformable plate urges the shunt bar against a second contact formed in the second substrate, thereby closing the switch. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium plated over a layer of gold. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate.

Abstract: A method for forming through wafer vias in a substrate uses a Cr/Au seed layer to plate the bottom of a blind trench formed in the front side of a substrate. Thereafter, a reverse plating process uses a forward current to plate the bottom and sides of the blind hole, and a reverse current to de-plate material in or near the top. Using the reverse pulse plating technique, the plating proceeds generally from the bottom of the blind hole to the top. To form the through wafer via, the back side of the substrate is ground or etched away to remove material up to and including the dead-end wall of the blind hole.