Patents by Inventor Pauls Stradins
Pauls Stradins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961925Abstract: The present disclosure relates to a passivating contact that includes a dielectric layer constructed of a first material, an intervening layer constructed of a second material, and a substrate constructed of a semiconductor, where the dielectric layer is positioned between the substrate and the intervening layer, the dielectric layer has a first thickness, and the substrate has a second thickness. The passivating contact also includes a plurality of conductive pathways that include the second material and pass through the first thickness, the second material penetrates into the second thickness forming a plurality of penetrating regions within the substrate, and the plurality of conductive pathways are configured to allow current to pass through the first thickness.Type: GrantFiled: November 1, 2021Date of Patent: April 16, 2024Assignee: Alliance for Sustainable Energy, LLCInventors: Pauls Stradins, William Michael Nemeth, David Levi Young, Caroline Lima Salles de Souza
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Patent number: 11508864Abstract: Presented herein are embodiments of a tandem solar panel subunit with 2-terminals, made from two 3-terminal cell tandems, whose top-cells are strongly current-mismatched to the Si 3-terminal bottom cell.Type: GrantFiled: August 17, 2020Date of Patent: November 22, 2022Assignee: Alliance for Sustainable Energy, LLCInventors: Pauls Stradins, Emily Lowell Warren, Adele Clare Tamboli
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Publication number: 20220293802Abstract: A flexible, non-flat solar cell comprises a flexible substrate. A pn junction is on or in the flexible substrate. The solar cell has been flexed so as to have a non-flat geometry that results in an increased surface area of the flexed solar cell with respect to the surface area of a flat solar cell that is the same as the flexed solar cell except that the flat solar cell has a flat surface geometry that has the same projected area on a lateral plane as does the flexed solar cell.Type: ApplicationFiled: September 3, 2020Publication date: September 15, 2022Inventors: Sang Eon HAN, Sang M. HAN, Seok Jun HAN, Pauls STRADINS
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Patent number: 11362221Abstract: PolySi:Ga/SiO2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.Type: GrantFiled: February 6, 2018Date of Patent: June 14, 2022Assignee: Alliance for Sustainable Energy, LLCInventors: David Levi Young, Pauls Stradins, Benjamin Guocian Lee
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Publication number: 20220140161Abstract: The present disclosure relates to a passivating contact that includes a dielectric layer constructed of a first material, an intervening layer constructed of a second material, and a substrate constructed of a semiconductor, where the dielectric layer is positioned between the substrate and the intervening layer, the dielectric layer has a first thickness, and the substrate has a second thickness. The passivating contact also includes a plurality of conductive pathways that include the second material and pass through the first thickness, the second material penetrates into the second thickness forming a plurality of penetrating regions within the substrate, and the plurality of conductive pathways are configured to allow current to pass through the first thickness.Type: ApplicationFiled: November 1, 2021Publication date: May 5, 2022Inventors: Pauls STRADINS, William Michael NEMETH, David Levi YOUNG, Caroline Lima Salles de SOUZA
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Publication number: 20210083135Abstract: The present disclosure provides systems and methods for improving the performance of a silicon solar cell by improving the contact layer. This involves chemically bonding an interlayer to the dielectric layer. An interlayer introduces specific impurities into the passivated contact. These impurities (such as nitrogen, fluorine, and/or carbon) can improve the passivation of the contact by improving or rejecting adhesion.Type: ApplicationFiled: September 14, 2020Publication date: March 18, 2021Inventors: Pauls STRADINS, William Michael NEMETH, Sumit AGARWAL
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Publication number: 20210050466Abstract: Presented herein are embodiments of a tandem solar panel subunit with 2-terminals, made from two 3-terminal cell tandems, whose top-cells are strongly current-mismatched to the Si 3-terminal bottom cell.Type: ApplicationFiled: August 17, 2020Publication date: February 18, 2021Inventors: Pauls STRADINS, Emily Lowell WARREN, Adele Clare TAMBOLI
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Patent number: 10714652Abstract: Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.Type: GrantFiled: June 21, 2018Date of Patent: July 14, 2020Assignee: Alliance for Sustainable Energy, LLCInventors: William Michael Nemeth, Pauls Stradins, Vincenzo Anthony LaSalvia, Matthew Robert Page, David Levi Young
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Publication number: 20180374984Abstract: Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.Type: ApplicationFiled: June 21, 2018Publication date: December 27, 2018Inventors: William Michael Nemeth, Pauls Stradins, Vincenzo Anthony LaSalvia, Matthew Robert Page, David Levi Young
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Publication number: 20180358480Abstract: Multijunction solar cells having an interdigitated back contact (IBC) platform cell are provided. According to an aspect of the invention, a multijunction device includes a top cell; a platform cell that is electrically connected to the top cell, wherein the platform cell comprises an interdigitated contact layer having a first contact of a first semiconductor type and a second contact of a second semiconductor type; a first bottom cell that is electrically connected to the first contact; a first electrical connection that is configured to deliver a first current from the first bottom cell to the second contact; and a second electrical connection that is configured to deliver a second current from the top cell to the second contact. The platform cell is positioned between the top cell and the first bottom cell.Type: ApplicationFiled: June 7, 2018Publication date: December 13, 2018Inventors: Pauls Stradins, Adele Clare Tamboli
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Publication number: 20180226521Abstract: PolySi:Ga/SiO2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.Type: ApplicationFiled: February 6, 2018Publication date: August 9, 2018Inventors: David Levi Young, Pauls Stradins, Benjamin Guocian Lee
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Patent number: 9985159Abstract: Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.Type: GrantFiled: November 11, 2016Date of Patent: May 29, 2018Assignee: Alliance for Sustainable Energy, LLCInventors: David L. Young, Pauls Stradins, William Nemeth
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Publication number: 20180138337Abstract: Transparent and conductive adhesive (TCA) materials that may be incorporated into various devices are provided. According to an aspect of the invention, a device includes a first layer, a second layer, and a third layer including a TCA material. The third layer is arranged between the first layer and the second layer, and is configured to provide electrical conductivity between the first layer and the second layer. The TCA material includes conductive elements dispersed within a transparent adhesive, and the conductive elements are deformable.Type: ApplicationFiled: November 14, 2017Publication date: May 17, 2018Inventors: Adele Clare Tamboli, Benjamin Guocian Lee, Pauls Stradins, Marinus Franciscus Antonius Maria van Hest, Talysa Renae Klein
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Patent number: 9911873Abstract: Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.Type: GrantFiled: August 11, 2016Date of Patent: March 6, 2018Assignee: Alliance for Sustainable Energy, LLCInventors: William Nemeth, Hao-Chih Yuan, Vincenzo LaSalvia, Pauls Stradins, Matthew R. Page
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Publication number: 20170141254Abstract: Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.Type: ApplicationFiled: November 11, 2016Publication date: May 18, 2017Inventors: David L. YOUNG, Pauls STRADINS, William NEMETH
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Publication number: 20170047458Abstract: Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.Type: ApplicationFiled: August 11, 2016Publication date: February 16, 2017Inventors: William NEMETH, Hao-Chih YUAN, Vincenzo LaSALVIA, Pauls STRADINS, Matthew R. PAGE
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Patent number: 9029792Abstract: An apparatus (200) for detecting slow or thermal neutrons (160). The apparatus (200) includes an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel.Type: GrantFiled: September 13, 2013Date of Patent: May 12, 2015Assignee: Alliance for Sustainable Energy, LLCInventors: Pauls Stradins, Howard M. Branz, Qi Wang, Harold R. McHugh
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Publication number: 20140141563Abstract: Systems and Methods for back contact to film silicon on metal for photovoltaic cells are provided. In one embodiment, a method for creating a conductive pathway in a photovoltaic cell comprises: obtaining a layered photovoltaic device comprising: a metal substrate with a crystal orientation; a crystal semiconductor layer with the crystal orientation; and a heteroepitaxially grown buffer layer positioned between the substrate and the crystal semiconductor layer; and forming one or more conductive pathways between the crystal semiconductor layer and the metal substrate, the pathways being through at least a portion of the buffer layer.Type: ApplicationFiled: February 5, 2014Publication date: May 22, 2014Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Howard M. Branz, Charles W. Teplin, Pauls Stradins
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Publication number: 20140061829Abstract: An apparatus (200) for detecting slow or thermal neutrons (160). The apparatus (200) includes an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel.Type: ApplicationFiled: September 13, 2013Publication date: March 6, 2014Applicant: Alliance for Sustainable Energy, LLCInventors: Pauls STRADINS, Howard M. BRANZ, Qi WANG, Harold R. McHUGH
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Patent number: 8569708Abstract: An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel.Type: GrantFiled: January 30, 2009Date of Patent: October 29, 2013Assignee: Alliance for Sustainable Energy, LLCInventors: Pauls Stradins, Howard M. Branz, Qi Wang, Harold R. McHugh