Abstract: A stack of layers 100, a lamp, a luminaire and a method of manufacturing a stack of layers is disclosed. The stack of layers 100 comprises a first outer layer 102, a second outer layer 106 and a luminescent layer 104. The first outer layer 102 and the second outer layer 106 are of a light transmitting polymeric material and have an oxygen transmission rate lower than 30 cm3/(m2-day) measured under standard temperature and pressure (STP). The luminescent layer 104 is sandwiched between the first outer layer 102 and the second outer layer 106 and comprises a light transmitting matrix polymer and a luminescent material 108 being configured to absorb light according to an absorption spectrum and convert a portion of the absorbed light towards light of a light emission spectrum.

Abstract: The present invention relates to a lighting device (100) to stimulate plant growth and bio-rhythm of a plant. The lighting device (100) comprising a solid state light source (102) arranged to emit direct red light having a wavelength of 600 to 680 nm, preferably 640 to 680 nm, and a wavelength converting member (106) arranged to receive at least part of said direct red light emitted from said solid state light source (102) and to convert said received direct red light to far-red light having a maximum emission wavelength of 700 to 760 nm, preferably 720 to 760 nm.

Abstract: A method for manufacturing a wavelength converting element (202, 301, 302, 303, 310, 312) the method comprising providing (100) a polymeric carrier material (200) having a first wavelength converting material (201) dispersed or molecular dissolved therein; the first wavelength converting material (201) is adapted to convert light of a first wavelength to light of a second wavelength, deforming (101) the polymeric carrier material at a first temperature at or above the glass transition temperature thereof such that at least part of the polymeric carrier material (200) is crystallized; and annealing (102) the polymeric carrier material(200) at a second temperature below the melting temperature thereof. Treatment of a polymeric material(200) according to the invention improves the stability and lifetime of a wavelength converting material (201) comprised in a such a treated polymeric material.

Abstract: A light emitting assembly (200), a lamp and a luminaire is provided. The light emitting assembly (200) comprises a first light source (214), a luminescent layer (208), a reflective area (212) and a second light source (210). The first light source (210) emits blue light (206) towards the luminescent layer (208) which is arranged at a distance from the first light source (214). The luminescent layer (208) comprises luminescent material which absorbs a portion of the received blue light (206) and converts a portion of the received light into green light (202). The second light source (210) emits orange, orange/red or red light towards the reflective area which reflect it towards the luminescent layer (208). The second light source (210) does not emit light (204) directly towards the luminescent layer (208).

Abstract: The invention provides a method for enhancing the nutritional value in a first plant part (2) of a crop (1), wherein the first plant part (2) comprises an edible plant part, wherein the crop (1) in addition to the first plant part (2) comprises one or more other plant parts (3), wherein the method comprises illuminating during a nutritional enhancement lighting period a target part (5) of said first plant part (2) with horticulture light (511) that is selected to enhance formation of a nutrient in said first plant part (2) while allowing one or more other plant parts (3) to be subjected to different light conditions, wherein the nutritional enhancement lighting period is started within two weeks from harvest of the first plant part (2).

Abstract: A stack of layers 100, a lamp, a luminaire and a method of manufacturing a stack of layers is disclosed. The stack of layers 100 comprises a first outer layer 102, a second outer layer 106 and a luminescent layer 104. The first outer layer 102 and the second outer layer 106 are of a light transmitting polymeric material and have an oxygen transmission rate lower than 30 cm3/(m2-day) measured under standard temperature and pressure (STP). The luminescent layer 104 is sandwiched between the first outer layer 102 and the second outer layer 106 and comprises a light transmitting matrix polymer and a luminescent material 108 being configured to absorb light according to an absorption spectrum and convert a portion of the absorbed light towards light of a light emission spectrum.

Abstract: A method for manufacturing a wavelength converting element (202, 301, 302, 303, 310, 312) the method comprising providing (100) a polymeric carrier material (200) having a first wavelength converting material (201) dispersed or molecular dissolved therein; the first wavelength converting material (201) is adapted to convert light of a first wavelength to light of a second wavelength, deforming (101) the polymeric carrier material at a first temperature at or above the glass transition temperature thereof such that at least part of the polymeric carrier material (200) is crystallized; and annealing (102) the polymeric carrier material(200) at a second temperature below the melting temperature thereof. Treatment of a polymeric material(200) according to the invention improves the stability and lifetime of a wavelength converting material (201) comprised in a such a treated polymeric material.

Abstract: The present invention relates to a dual gate field-effect transistor (1) comprising a first and a second dielectric layer (6,7), a first and a second gate electrode (9,11) and an assembly (2) of at least one source electrode (3), at least one drain electrode (4) and at least one organic semiconductor (5), wherein—the source electrode (3) and the drain electrode (4) are in contact with the semiconductor (5), the assembly (2) is located between the first dielectric layer (6) and the second dielectric layer (7), the first dielectric layer (6) is located between the first gate electrode (9) and a first side (8) of the assembly (2), and the second dielectric layer (7) is located between the second gate electrode (11) and a second side (10) of the assembly (2), wherein the organic semi-conductor (5) is an organic ambipolar conduction semiconductor (12) which enables at least one electron injection area (18) at the first side (8) and at least one hole injection area (18) at the second side (19) of the assembly (2).