Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

Abstract: The present invention is directed to a method of manufacturing a multilayer semiconductor element. According to this method a first device layer is provided on a carrier by solution printing of a first material on the carrier. A second device layer is provided by solution printing of a second material solution on said first device layer; the second material solution comprising second device layer material dissolved in a solvent. Prior to solution printing of the second device layer, a barrier interlayer is added onto the first layer for being arranged in between said first and said second device layer. The barrier interlayer comprises an interlayer material insoluble to said solvent, and arranged for enabling electric interaction between the first and second device layer. The invention further provides a semiconductor element.

Abstract: A method of manufacturing an electro-optical device stack (10) includes providing a multi-layered structure comprising an electro-optical layer (13) that contacts a charge injection layer (12) comprising an acidic compound (12m). A resist layer (14) is deposited onto the electro-optical layer (13) and comprises a cationically-crosslinkable resist material (14m) that reacts adjacent breaches (12?,13?) in the electro-optical layer (13) by a cross-linking reaction. This reaction is induced by protons (12p) from the charge injection layer (12) and results in covering of the breaches (12?,13?) with patches (14p) comprising cross-linked resist material (14c). Parts of the resist material (14m) that have not cross-linked are removed, whereas the remaining patches (14p) provide electrical insulation between the charge injection layer (12) and a layer subsequently deposited onto the electro-optical layer (13).

Abstract: Described is an (organic) light-emitting diode ((O)LED) wherein the light-emitting layer comprises a blend of an electroluminescent semiconducting material with a ferro-electric material. Either of the electrodes forms a modulatable injection barrier with the ferro-electric material, the modulation requiring a voltage Vm serving to polarize or repolarize the ferro-electric material. With Vm being larger than the voltage Ve required for light emission, the (O)LED can be turned “on” or “off” by applying a pulse voltage to (re)polarize the ferro-electric material.

Abstract: The present invention is directed to a method of manufacturing a multilayer semiconductor element. According to this method a first device layer is provided on a carrier by solution printing of a first material on the carrier. A second device layer is provided by solution printing of a second material solution on said first device layer; the second material solution comprising second device layer material dissolved in a solvent. Prior to solution printing of the second device layer, a barrier interlayer is added onto the first layer for being arranged in between said first and said second device layer. The barrier interlayer comprises an interlayer material insoluble to said solvent, and arranged for enabling electric interaction between the first and second device layer. The invention further provides a semiconductor element.

Abstract: There is provided a method of manufacturing an electro-optical device stack (10), the method comprising providing a multi-layered structure comprising an electro-optical layer (13) contacting a charge injection layer (12), the charge injection layer (12) comprising an acidic compound (12m); depositing a resist layer (14) onto the electro-optical layer (13), the resist layer (14) comprising a cationically-crosslinkable resist material (14m); having the resist material (14m) react adjacent breaches (12?,13?) in the electro-optical layer (13) by a cross-linking reaction induced by protons (12p) from the charge injection layer (12) thereby covering said breaches (12?,13?) with patches (14p) comprising cross-linked resist material (14c); and removing parts of the resist material (14m) that have not cross-linked, wherein the patches (14p) remain arranged for providing electrical insulation between the charge injection layer (12) and a layer subsequently deposited onto the electro-optical layer (13) and patches (14p

Abstract: A thin film solar cell module (1) is disclosed that is substantially translucent in at least a first wavelength domain. The module comprises a photo-electric layer (20) arranged for receiving solar radiation and for converting solar radiation in at least a second wavelength domain different from the at least a first wavelength domain into electric energy and a selectively reflective layer (30) arranged against the photo-electric layer for selectively reflecting radiation in said second wavelength domain transmitted by the photo-electric layer.

Abstract: Described is an (organic) light-emitting diode ((O)LED) wherein the light-emitting layer comprises a blend of an electroluminescent semiconducting material with a ferro-electric material. Either of the electrodes forms a modulatable injection barrier with the ferro-electric material, the modulation requiring a voltage Vm serving to polarize or repolarize the ferro-electric material. With Vm being larger than the voltage Ve required for light emission, the (O)LED can be turned “on” or “off” by applying a pulse voltage to (re)polarize the ferro-electric material.

Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

Abstract: The invention relates to a copolymer for a charge transport layer in an optoelectronic device and in particular in a light-emitting diode (LED), having a charge mobility of at least 1.0×1010 m2/V.s, and comprising at least a first and a second monomer, characterized in that the ratio of the solubilities of homopolymers made from the first and the second monomer in a first solvent is more than 10. This copolymer allows a (semi) conductive polymer to be cast to form a first layer and prevents it from being dissolved in the solvent of a subsequently deposited second, e.g. light-emitting layer. The invention further relates to a LED comprising a copolymer according to the invention.

Abstract: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.

Abstract: The invention relates to a copolymer for a charge transport layer in an optoelectronic device and in particular in a light-emitting diode (LED), having a charge mobility of at least 1.0×1010 m2/V.s, and comprising at least a first and a second monomer, characterized in that the ratio of the solubilities of homopolymers made from the first and the second monomer in a first solvent is more than 10. This copolymer allows a (semi) conductive polymer to be cast to form a first layer and prevents it from being dissolved in the solvent of a subsequently deposited second, e.g. light-emitting layer. The invention further relates to a LED comprising a copolymer according to the invention.

Abstract: The invention relates to a light-emitting diode comprising an anode, a cathode, a light-emitting layer, and at least one charge transport layer which has a luminescence efficiency which is at least 25% of the luminescence efficiency of the light-emitting layer. This leads to a light-emitting diode with a smaller percentage of catastrophic failures than in existing LEDs, because the charge transport layer takes over the light emission in case of a short-circuit of the light-emitting layer.

Abstract: The element (50) comprises a first electrode (51), a self-assembled system (52), which is or comprises a monolayer an a second electrode (54). A polymeric contact layer (53) that has been deposited wet-chemically is present between the self-assembled system (52) and the second electrode (54). Suitably, both the self-assembled system (52) and the contact layer (53) are provided in a cavity (40).

Abstract: The present invention relates to magneto-optical recording technique whereby improved domain expansion reading is achieved. A mark region is recorded as a sub-mark portion and an adjacent sub-space portion, wherein the length of the sub-mark portion is set to be less than or equal to the length of the sub-space portion. Stray field variations due to different runlengths of the recording data can thus be equalized even for short channel bit lengths, while the resolution and/or power margin is improved.

Abstract: For high-resolution and low bit-error-rate MAMMOS readout, a magnetic head includes a flat magnetic coil (1) having a coil layer structure (3a, 3b) having an electrically conductive winding (5a, 5b), and includes a permanent-magnet layer structure (7) extending parallel to the coil layer structure and having an in-plane magnetic axis (m).

Abstract: A method and device are described for writing an optical record carrier, in which a mark representing recorded data is written in a phase change layer of a record carrier by a sequence of radiation pulses. A trailing power level (t) having a value higher than the erase power level (e) is introduced after a last write pulse 3 in a sequence. Additionally, the power level of the last write pulse 3 in a sequence may be raised. This results in a reduced jitter of the marks written, especially when writing at high recording speeds.

Abstract: The present invention relates to magneto-optical recording technique whereby improved domain expansion reading is achieved. A mark region is recorded as a sub-mark portion and an adjacent sub-space portion, wherein the length of the sub-mark portion is set to be less than or equal to the length of the sub-space portion. Stray field variations due to different runlengths of the recording data can thus be equalized even for short channel bit lengths, while the resolution and/or power margin is improved.

Abstract: For high-resolution and low bit-error-rate MAMMOS readout a magnetic head is proposed, which head includes a flat magnetic coil (1) having a coil layer structure (3a, 3b) comprising an electrically conductive winding (5a, 5b) and includes a permanent-magnet layer structure (7) which extends parallel to the coil layer structure and has an in-plane magnetic axis (m).