Abstract: Title: Method for providing a substrate for an electrochemical cell with a catalytic material Abstract The invention relates to a method for providing a substrate for an electrochemical cell with a catalytic material. The method comprises atomic layer deposition (ALD) that comprises providing a catalyst precursor for the catalytic material. The ALD further comprises providing a carrier precursor for forming a carrier material. The invention further relates to a substrate provided with a catalytic material and a PEM electrolysis cell comprising a substrate provided with a catalytic material.

Abstract: The present disclosure concerns an atomic layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non-deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces provided with at least a separator gas inlet and a separator drain for, in use exposing the substrate to a separator gas flow. Wherein at least one of the gas separator spaces forms a combined separator-inhibitor gas flow comprising a separator gas and inhibitor moieties. The inhibitor moieties selectively adhering to the non-deposition area to form an inhibition layer reducing adsorption of precursor moieties. In a preferred embodiment the device includes a back-etching space to increase selectivity of the deposition process.

Abstract: A plasma source has an outer surface, interrupted by an aperture for delivering an atmospheric plasma from the outer surface. A transport mechanism transports a substrate in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface the and the substrate. A first electrode of the plasma source has a first and second surface extending from an edge of the first electrode that runs along the aperture. The first surface defines the outer surface on a first side of the aperture. The distance between the first and second surface increasing with distance from the edge.

Abstract: A method and system for depositing an atomic layer on a substrate. The method performs one or more method cycles to form a p-type oxide layer, wherein a method cycle includes performing successively the steps of: exposing the substrate to a Sn(IV) or Cu(II) precursor gas, exposing the substrate to an oxygen donor gas, wherein prior to and/or after exposing the substrate to the oxygen donor gas, hydrogen radicals are exposed to the substrate.

Abstract: An electrode for a Lithium battery, comprising: a multi-dyad nanolaminate stack formed of a metal oxide layer of the group TiO2, MnO2 or combinations thereof, ranging between 0.3 and 300 nm; separated by a decoupling layer.

Abstract: An electrode for a Lithium battery, comprising: a multi-dyad nanolaminate stack formed of a metal oxide layer of the group TiO2, MnO2 or combinations thereof, ranging between 0.3 and 300 nm; separated by a decoupling layer.

Abstract: A method of depositing an atomic layer on a substrate comprises supplying a precursor gas from a precursor-gas supply comprised in a drum; the drum being rotatable with respect to a sealing piece that receives gas from a gas source. One of the drum or sealing piece comprising one or more gas feed channels in fluid connection with the precursor-gas supply and the other of the drum or sealing piece comprises one or more circumferential grooves in its surface sealed by the one of the drum or sealing piece thereby preventing a fluid flowpath in radial direction and leaving a fluid flow path in circumferential direction. At least one sealed groove is provided with one or more separations separating adjacent zones of process gas feeds in the sealed groove, thus allowing zones to provide for mutually differing process gas compositions to have the precursor gas react near, e.g. on, the substrate thus depositing a stack of atomic layers of a gradient composition.

Abstract: The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.

Abstract: A method of depositing an atomic layer on a substrate comprises supplying a precursor gas from a precursor-gas supply comprised in a drum; the drum being rotatable with respect to a sealing piece that receives gas from a gas source. One of the drum or sealing piece comprising one or more gas feed channels in fluid connection with the precursor-gas supply and the other of the drum or sealing piece comprises one or more circumferential grooves in its surface sealed by the one of the drum or sealing piece thereby preventing a fluid flowpath in radial direction and leaving a fluid flow path in circumferential direction. At least one sealed groove is provided with one or more separations separating adjacent zones of process gas feeds in the sealed groove, thus allowing zones to provide for mutually differing process gas compositions to have the precursor gas react near, e.g. on, the substrate thus depositing a stack of atomic layers of a gradient composition.

Abstract: A plasma source has an outer surface, interrupted by an aperture for delivering an atmospheric plasma from the outer surface. A transport mechanism transports a substrate in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface the and the substrate. A first electrode of the plasma source has a first and second surface extending from an edge of the first electrode that runs along the aperture. The first surface defines the outer surface on a first side of the aperture. The distance between the first and second surface increasing with distance from the edge.

Abstract: A method of manufacturing a substrate with a patterned layer of deposited material, the patterned layer being deposited from a processing head, the method comprising applying bearing gas from the processing head to keep the processing head hovering over the substrate on a gas bearing; moving the substrate and the hovering processing head relative to each other; applying a primer material for selective deposition of a deposition material to the substrate, the primer material being applied from a first area of a surface of the processing head that faces the substrate, and spatially patterning the primer on the substrate after or during application; applying the deposition material to the substrate from a second area of the surface of the processing head that faces the substrate, the second area lying downstream of the first area in a direction of the movement of the substrate relative to the processing head.

Abstract: The present invention relates to a method for enhancing the conductivity of an undoped transparent metal oxide to obtain a transparent conductive oxide (TCO) electrode. More in particular it relates to such a method comprising the steps of providing a transparent metal oxide, applying a UV transparent barrier layer on the transparent metal oxide, and irradiating the transparent metal oxide with UV radiation after applying the barrier layer.

Abstract: The present invention relates to a method for enhancing the conductivity of an undoped transparent metal oxide to obtain a transparent conductive oxide (TCO) electrode. More in particular it relates to such a method comprising the steps of providing a transparent metal oxide, applying a UV transparent barrier layer on the transparent metal oxide, and irradiating the transparent metal oxide with UV radiation after applying the barrier layer.

Abstract: Apparatus for atomic layer deposition on a surface of a substrate, the apparatus comprising: a deposition member; a substrate table for supporting the substrate; a first reactant injector for supplying a first reactant; a second reactant injector for supplying a second reactant; a gas injector being arranged for creating, by means of gas injected by the gas injector, a gas barrier and optionally being arranged for creating a gas bearing; a heater for heating the gas that is to be injected by the gas injector; and an additional heater for heating the deposition member and the substrate table, and for heating the substrate. The deposition member has a gas inlet for the gas that is to be injected by the gas injector. The heater is provided outside the deposition member. The gas transported from the gas inlet is heated by the heater before said gas enters the gas inlet.

Abstract: The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.

Abstract: A method of manufacturing a substrate with a patterned layer of deposited material, the patterned layer being deposited from a processing head, the method comprising applying bearing gas from the processing head to keep the processing head hovering over the substrate on a gas bearing; moving the substrate and the hovering processing head relative to each other; applying a primer material for selective deposition of a deposition material to the substrate, the primer material being applied from a first area of a surface of the processing head that faces the substrate, and spatially patterning the primer on the substrate after or during application; applying the deposition material to the substrate from a second area of the surface of the processing head that faces the substrate, the second area lying downstream of the first area in a direction of the movement of the substrate relative to the processing head.

Abstract: The invention relates to a method for treating a metal oxide layer deposited on a substrate. The method comprises the step of applying a substantially atmospheric plasma process at a relatively low temperature. Preferably, the temperature during the plasma process is lower than approximately 180° C. Further, the atmospheric plasma process can be applied in a plasma chamber comprising H2 gas and He gas.

Abstract: The invention relates to a method for treating a metal oxide layer deposited on a substrate. The method comprises the step of applying a substantially atmospheric plasma process at a relatively low temperature. Preferably, the temperature during the plasma process is lower than approximately 180° C. Further, the atmospheric plasma process can be applied in a plasma chamber comprising H2 gas and He gas.