Patents by Inventor Pavan Aella

Pavan Aella has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming charge storage structures including etching diffused regions to form recesses
    Patent number: 9087737
    Abstract: Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: July 21, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Alex Schrinsky, Anish Khandekar, Pavan Aella, Niraj B. Rana
  • METHODS OF FORMING CHARGE STORAGE STRUCTURES INCLUDING ETCHING DIFFUSED REGIONS TO FORM RECESSES
    Publication number: 20140349454
    Abstract: Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.
    Type: Application
    Filed: August 11, 2014
    Publication date: November 27, 2014
    Inventors: Alex Schrinsky, Anish Khandekar, Pavan Aella, Niraj B. Rana
  • Methods of forming charge storage structures including etching diffused regions to form recesses
    Patent number: 8802525
    Abstract: Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: August 12, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Alex Schrinsky, Anish Khandekar, Pavan Aella, Niraj B. Rana
  • METHODS OF FORMING CHARGE STORAGE STRUCTURES INCLUDING ETCHING DIFFUSED REGIONS TO FORM RECESSES
    Publication number: 20130040429
    Abstract: Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed.
    Type: Application
    Filed: August 8, 2011
    Publication date: February 14, 2013
    Applicant: Micron Technology, Inc.
    Inventors: Alex Schrinsky, Anish Khandekar, Pavan Aella, Niraj B. Rana