Abstract: Embodiments of the present invention include systems and methods of controlling reticle transmission. A process window for reticle transmission is received. For a given design, default fill cells of a default fill pattern are inserted in unused areas of an integrated circuit (IC). A pattern density is computed for each tile of an IC at each appropriate level, such as metallization levels and contact levels. An IC reticle transmission (RT) is computed for an area corresponding to an entire (or area of) IC or reticle. If the integrated circuit RT is outside of the process window, then the tiles that have an individual tile RT that is outside of the process window are identified and ranked into groups. Default fill cells in one group of tiles are replaced with replacement fill cells having an appropriate pattern and pattern density, and an updated IC RT parameter is computed until the updated IC RT parameter is within the process window.

Abstract: Embodiments of the present invention include systems and methods of controlling reticle transmission. A process window for reticle transmission is received. For a given design, default fill cells of a default fill pattern are inserted in unused areas of an integrated circuit (IC). A pattern density is computed for each tile of an IC at each appropriate level, such as metallization levels and contact levels. An IC reticle transmission (RT) is computed for an area corresponding to an entire (or area of) IC or reticle. If the integrated circuit RT is outside of the process window, then the tiles that have an individual tile RT that is outside of the process window are identified and ranked into groups. Default fill cells in one group of tiles are replaced with replacement fill cells having an appropriate pattern and pattern density, and an updated IC RT parameter is computed until the updated IC RT parameter is within the process window.

Abstract: An approach for providing a fragmentation scheme for lithographic fills is provided. In a typical embodiment, a plurality of shapes in a lithographic (e.g., dummy) fill will be grouped/classified into a first set of shapes (e.g., a representative set of shapes) and a second set of shapes (e.g., a similar set of shapes). A set of points will be identified along the edges of the first set of shapes (e.g., at corners of the edges and at positions along the edges that are in alignment with corners of adjacent shapes) to yield an initial mask output. This initial mask output will be copied to the second set of shapes to yield a final mask output which may then be outputted using such an optimized fragmentation scheme.

Abstract: An approach for providing a fragmentation scheme for lithographic fills is provided. In a typical embodiment, a plurality of shapes in a lithographic (e.g., dummy) fill will be grouped/classified into a first set of shapes (e.g., a representative set of shapes) and a second set of shapes (e.g., a similar set of shapes). A set of points will be identified along the edges of the first set of shapes (e.g., at corners of the edges and at positions along the edges that are in alignment with corners of adjacent shapes) to yield an initial mask output. This initial mask output will be copied to the second set of shapes to yield a final mask output which may then be outputted using such an optimized fragmentation scheme.