Abstract: Exemplary semiconductor processing chambers may include a faceplate assembly characterized by at least one surface defining a number of voids. Each void is configured to receive an interchangeable thermal body that can be selected from multiple interchangeable thermal bodies. Exemplary semiconductor processing chambers may also include a gas box characterized by movable members. Each movable member is configured to engage a delivery port and is movable to provide flow control for a gas being delivered to the processing volume through a gas flow path. Zoned flow and/or temperature control may be provided by the faceplate assembly, the gas box, or both.

Abstract: Exemplary semiconductor processing systems may include a chamber body comprising sidewalls and a base. The systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate defining a plurality of channels through an interior of the support plate. Each channel of the plurality of channels may include a radial portion extending outward from a central channel through the support plate. Each channel may also include a vertical portion formed at an exterior region of the support plate fluidly coupling the radial portion with a support surface of the support plate. The substrate support may include a shaft coupled with the support plate. The central channel may extend through the shaft. The systems may include a fluid source coupled with the central channel of the substrate support.

Abstract: Exemplary semiconductor processing systems include a chamber body having sidewalls and a base. The systems may include a substrate support extending through the base. The substrate support may include a support plate defining lift pin locations and a shaft coupled with the support plate. The systems may include a shield coupled with the shaft and extending below the support plate. The shield may define a central aperture that extends beyond an outer periphery of the shaft. The systems may include a purge baffle coupled with the shield at a position that is beyond the central aperture such that a space between the purge baffle and the shaft is in fluid communication with a space between the shield and the support plate. The purge baffle may extend along at least a portion of the shaft. The systems may include a purge gas source coupled with the purge baffle.