Abstract: Embodiments of the invention are directed to a system, method, or computer program product for cross-channel network security with tiered adaptive mitigation operations. In this regard, the invention is structured for dynamic detection of security events associated with network devices and resources, and triggering real-time mitigation operations across a plurality of resource channels. The invention provides a novel method for employing activity data to construct and implement mitigation actions for de-escalating authorization tiers that are adapted to the specific attributes of the activity data, in order to prevent security exposure associated with the activity. Another aspect of the invention is directed to determining whether to continue the tiered adaptive mitigation actions and/or trigger a security proceed signal.

Abstract: Computer implemented method, systems, and computer program products include program code executing on a processor(s) that determines that a user has purchased a product. The program code classifies, with at least one trained algorithm, the product into a product type classification. The program code implements one or more trigger events; based on each trigger event occurring, the processor(s) generates and transmits an inquiry to the user. The program code determines that a trigger event has occurred. The program code generates the inquiry, obtains responsive feedback, and generates a product review.

Abstract: Embodiments of systems and methods to provide a firmware update to multiple storage units configured in a redundant configuration in an Information Handling System (IHS) are disclosed. In an illustrative, non-limiting embodiment, an IHS may include computer-executable instructions to receive a firmware update image associated with multiple devices configured in the IHS, identify two or more of the devices that are configured in a redundant configuration relative to one another, and perform the firmware update sequentially on the two or more devices.

Abstract: Provided herein are compositions and methods for preventing, attenuating or treating T cell mediated intestinal disorders. In particular, provided herein are methods for preventing, attenuating or treating T cell mediated intestinal disorders characterized with reduced intestinal epithelial cell (IEC) specific mitochondrial complex II component intrinsic succinate dehydrogenase A (SDHA) activity and/or expression through use of compositions comprising a therapeutic agent capable of preventing and/or hindering reduction of IEC related SDHA activity and/or expression.

Abstract: A method of forming a microelectronic device includes forming conductive interconnect structures vertically extending through isolation material to conductive contact structures coupled to pillar structures, forming a metal silicide material on the interconnect structures and the first isolation material, forming a conductive material on the metal silicide material, and forming a dielectric material over the conductive material. The method further includes forming openings vertically extending through the dielectric material, the conductive material, the metal silicide material, and the isolation material and forming additional isolation material to extend over remaining portions of the dielectric material and at least partially fill the openings. Related devices and systems are disclosed.

Abstract: The present disclosure relates to methods of treating or preventing graft-versus-host disease (GVHD) comprising administering to the subject a pharmaceutically effective amount of a compound disclosed herein. The present disclosure also relates to pharmaceutical compositions and pharmaceutical kits suitable for the treatment or prevention.

Abstract: Methods, systems, and devices for leakage source detection are described. In some cases, a testing device may scan a first set of access lines of a memory die that have a first length and a second set of access lines of the memory die that have a second length different than the first length. The testing device may determine a first error rate associated with the first set of access lines and a second error rate associated with the second set of access lines. The testing device may categorize a performance of the memory die based on the first and second error rates. In some cases, the testing device may determine a third error rate associated with a type of error based on the first and second error rates and may categorize the performance of the memory die based on the third error rate.

Abstract: Methods, systems, and devices for techniques for manufacturing a double electrode memory array are described. A memory device may be fabricated using a sequence of fabrication steps that include depositing a first stack of materials including a conductive layer, an interface layer, and a first electrode layer. The first stack of materials may be etched to form a first set of trenches. A second stack of materials may be deposited on top of the first stack of materials. The second stack may include a second electrode layer in contact with the first electrode layer, a storage layer, and a third electrode layer. The second stack of materials may be etched to form a second set of trenches above the first set of trenches, and filled with a sealing layer and a dielectric material. The sealing layer may not extend substantially into the first set of trenches.

Abstract: Methods, systems, and devices for techniques for forming memory structures are described. Forming a memory structure may include etching a stack of material including a conductive line, a first electrode and a sacrificial material to divide the stack of material into multiple sections. The process may further include depositing an oxide material in each of the first quantity of channels to form multiple oxide materials. The sacrificial material may be etched to form a second channel between two oxide materials of the multiple oxide materials. Memory material may be deposited over the two oxide materials and the second channel, which may create a void in the second channel between the memory material and the first electrode. The memory material may be heated to fill the void in the second channel.

Abstract: The invention relates to an N-terminal extension sequences which are employed to enhance the expression of recombinant therapeutic peptides. The invention also relates to a process for the high-level expression of recombinant therapeutic peptides using the said N-terminal extension sequence. The invention also provides nucleic acids, vectors and recombinant host cells for efficient production of biologically active proteins such as lirapeptide.

Abstract: This disclosure provides miRNA/mRNA pairs that can be used to increase the efficacy of T cells or to down-modulate T cell efficacy and restore equilibrium.

Abstract: This disclosure provides miRNA/mRNA pairs that can be used to increase the efficacy of T cells or to down-modulate T cell efficacy and restore equilibrium.

Abstract: Methods and systems for providing a centralized customer graphical user interface (GUI) include receiving an indication that a user has initiated an interaction with a cloud platform for support. In response, an interaction record is created for the interaction. A context is also determined for the interaction. The GUI displays information based on the context. An indication that an ending of the interaction has occurred may cause the GUI to present a wrap-up with confirmation indicators for one or more records interacted with via the GUI. The GUI may also receive an indication that one or more of the confirmation indicators is correct, and in response to receiving the indication that the one or more of the confirmation indicators is correct, one or more corresponding records are edited.

Abstract: Provided herein are compositions and methods for administering bacterial strains to reduce GvHD and improve survival after allogeneic BMT.

Abstract: Methods, systems, and devices for leakage source detection are described. In some cases, a testing device may scan a first set of access lines of a memory die that have a first length and a second set of access lines of the memory die that have a second length different than the first length. The testing device may determine a first error rate associated with the first set of access lines and a second error rate associated with the second set of access lines. The testing device may categorize a performance of the memory die based on the first and second error rates. In some cases, the testing device may determine a third error rate associated with a type of error based on the first and second error rates and may categorize the performance of the memory die based on the third error rate.

Abstract: Methods, systems, and devices for leakage source detection are described. In some cases, a testing device may scan a first set of access lines of a memory die that have a first length and a second set of access lines of the memory die that have a second length different than the first length. The testing device may determine a first error rate associated with the first set of access lines and a second error rate associated with the second set of access lines. The testing device may categorize a performance of the memory die based on the first and second error rates. In some cases, the testing device may determine a third error rate associated with a type of error based on the first and second error rates and may categorize the performance of the memory die based on the third error rate.

Abstract: Methods, systems, and devices for techniques for forming memory structures are described. Forming a memory structure may include etching a stack of material including a conductive line, a first electrode and a sacrificial material to divide the stack of material into multiple sections. The process may further include depositing an oxide material in each of the first quantity of channels to form multiple oxide materials. The sacrificial material may be etched to form a second channel between two oxide materials of the multiple oxide materials. Memory material may be deposited over the two oxide materials and the second channel, which may create a void in the second channel between the memory material and the first electrode. The memory material may be heated to fill the void in the second channel.

Abstract: Methods, systems, and devices for leakage source detection are described. In some cases, a testing device may scan a first set of access lines of a memory die that have a first length and a second set of access lines of the memory die that have a second length different than the first length. The testing device may determine a first error rate associated with the first set of access lines and a second error rate associated with the second set of access lines. The testing device may categorize a performance of the memory die based on the first and second error rates. In some cases, the testing device may determine a third error rate associated with a type of error based on the first and second error rates and may categorize the performance of the memory die based on the third error rate.

Abstract: Methods, systems, and devices for techniques for forming memory structures are described. Forming a memory structure may include etching a stack of material including a conductive line, a first electrode and a sacrificial material to divide the stack of material into multiple sections. The process may further include depositing an oxide material in each of the first quantity of channels to form multiple oxide materials. The sacrificial material may be etched to form a second channel between two oxide materials of the multiple oxide materials. Memory material may be deposited over the two oxide materials and the second channel, which may create a void in the second channel between the memory material and the first electrode. The memory material may be heated to fill the void in the second channel.

Abstract: Methods, systems, and devices for techniques for forming memory structures are described. Forming a memory structure may include etching a stack of material including a conductive line, a first electrode and a sacrificial material to divide the stack of material into multiple sections. The process may further include depositing an oxide material in each of the first quantity of channels to form multiple oxide materials. The sacrificial material may be etched to form a second channel between two oxide materials of the multiple oxide materials. Memory material may be deposited over the two oxide materials and the second channel, which may create a void in the second channel between the memory material and the first electrode. The memory material may be heated to fill the void in the second channel.