Abstract: An electron microscope (100) is described. The electron microscope comprises an electron source (110) for generating an electron beam, a condenser lens (130) for collimating the electron beam downstream of the electron source, and an objective lens (140) for focusing the electron beam onto a specimen (16). The electron source comprises a cold field emitter with an emission tip (112), an extractor electrode (114) for extracting the electron beam (105) from the cold field emitter for propagation along an optical axis (A), the extractor electrode having a first opening (115) configured as a first beam limiting aperture, a first cleaning arrangement (121) for cleaning the emission tip (112) by heating the emission tip, and a second cleaning arrangement (122) for cleaning the extractor electrode (114) by heating the extractor electrode. Further described is a method of operating such an electron microscope.

Abstract: A charged particle beam apparatus (100) is described. The charged particle beam apparatus includes a first vacuum region (121) in which a charged particle beam emitter (105) for emitting a charged particle beam (102) along an optical axis (A) is arranged, a second vacuum region (122) downstream of the first vacuum region and separated from the first vacuum region by a first gas separation wall (132) with a first differential pumping aperture (131), wherein the first differential pumping aperture (131) is configured as a first beam limiting aperture for the charged particle beam (102); and a third vacuum region (123) downstream of the second vacuum region and separated from the second vacuum region by a second gas separation wall (134) with a second differential pumping aperture (133), wherein the second differential pumping aperture (133) is configured as a second beam limiting aperture for the charged particle beam (102).

Abstract: A charged particle beam apparatus (100) is described. The charged particle beam apparatus includes a first vacuum region (121) in which a charged particle beam emitter (105) for emitting a charged particle beam (102) along an optical axis (A) is arranged, a second vacuum region (122) downstream of the first vacuum region and separated from the first vacuum region by a first gas separation wall (132) with a first differential pumping aperture (131), wherein the first differential pumping aperture (131) is configured as a first beam limiting aperture for the charged particle beam (102); and a third vacuum region (123) downstream of the second vacuum region and separated from the second vacuum region by a second gas separation wall (134) with a second differential pumping aperture (133), wherein the second differential pumping aperture (133) is configured as a second beam limiting aperture for the charged particle beam (102).

Abstract: A charged particle beam arrangement is described. The charged particle beam arrangement includes a charged particle source including a cold field emitter, a beam limiting aperture between the charged particle source and a magnetic condenser lens; the magnetic condenser lens comprising a first inner pole piece and a first outer pole piece, wherein a first axial distance between the charged particle source and the first inner pole piece is equal or less than approximately 20 mm, an acceleration section for accelerating the charged particle beam to an energy of 10 keV or more, a magnetic objective lens comprising a second inner pole piece and a second outer pole piece, a third axial distance between the second inner pole piece and a surface of a specimen is equal to or less than approximately 20 mm, and a deceleration section.

Abstract: The present disclosure provides an electron beam device (500) for inspecting a sample (10) with an electron beam, comprising an electron beam source comprising a cold field emitter (100) for emitting an electron beam, electron beam optics for directing and focusing the electron beam onto the sample (10), and a detector device (540) for detecting secondary charged particles generated by impingement of the electron beam on the sample (10).

Abstract: A housing device for providing a magnetic shielding of a charged particle beam is described. The housing device includes a housing element configured to at least partially enclose a charged particle beam propagation path and comprising a magnetic shielding material, wherein the housing element includes an inner surface directed toward the charged particle beam propagation path, an outer surface directed away from the charged particle beam propagation path and at least one edge region with an edge surface connecting the inner surface with the outer surface; and a contacting element comprising a conductive material and fixed to the at least one edge region in at least one of a form-fit connection and a bonded connection. Further, a housing arrangement including two or more electrically contacting housing devices, a charged particle beam device with a housing device, and methods of manufacturing a housing device are described.

Abstract: A housing device for providing a magnetic shielding of a charged particle beam is described. The housing device includes a housing element configured to at least partially enclose a charged particle beam propagation path and comprising a magnetic shielding material, wherein the housing element includes an inner surface directed toward the charged particle beam propagation path, an outer surface directed away from the charged particle beam propagation path and at least one edge region with an edge surface connecting the inner surface with the outer surface; and a contacting element comprising a conductive material and fixed to the at least one edge region in at least one of a form-fit connection and a bonded connection. Further, a housing arrangement including two or more electrically contacting housing devices, a charged particle beam device with a housing device, and methods of manufacturing a housing device are described.

Abstract: A cold field emitter for emitting an electron beam for an electron beam device is described. The emitter includes an emitter tip having a tip surface; and two or more adjacent facets formed at the tip surface and having facet boundaries, each of the facets forming a recess in the emitter tip, wherein the facets are separated. An intermediate area is provided between and around the two or more adjacent facets and the intermediate area is configured for electron emission. Further, an electron beam device, a method for operating an electron beam device and a method for producing an emitter for an electron beam device is described.

Abstract: A multi-beam scanning electron beam device (100) is described. The multi-bea scanning electron beam device having a column, includes a multi-beam emitter (110) for emitting a plurality of electron beams (12,13,14), at least one common electron beam optical element (130) having a common opening for at least two of the plurality of electron beams and being adapted for commonly influencing at least two of the plurality of electron beams, at least one individual electron beam optical element (140) for individually influencing the plurality of electron beams, a common objective lens assembly (150) for focusing the plurality of electrons beams having a common excitation for focusing at least two of the plurality of electron beams, and adapted for focusing the plurality of electron beams onto a specimen (20) for generation of a plurality of signal beams (121, 131,141), and a detection assembly (170) for individually detecting each signal beam on a corresponding detection element.

Abstract: A charged particle beam source device adapted for generating a charged particle beam is provided. The charged particle beam source device includes an emitter tip adapted for providing charged particles. Furthermore, an extractor electrode having an aperture opening is provided for extracting the charged particles from the emitter tip. An aperture angle of the charged particle beam is 2 degrees or below the aperture angle being defined by a width of the aperture opening and a distance between the emitter tip and the extractor electrode, wherein the distance between the emitter tip and the extractor electrode is a range from 0.1 mm to 2 mm.

Abstract: A gun arrangement configured for generating a primary electron beam for a wafer imaging system is described. The arrangement includes a controller configured for switching between a normal operation and a cleaning operation, a field emitter having an emitter tip adapted for providing electrons and emitting an electron beam along an optical axis, an extractor electrode adapted for extracting the electron beam from the emitter tip electrode, a suppressor electrode, and at least one auxiliary emitter electrode arranged radially outside the suppressor electrode, and provided as a thermal electron emitter for thermally emitting electrons towards the optical axis.

Abstract: A method of pre-treating an ultra high vacuum charged particle gun chamber by ion stimulated desorption is provided. The method includes generating a plasma for providing a plasma ion source, and applying a negative potential to at least one surface in the gun chamber, wherein the negative potential is adapted for extracting an ion flux from the plasma ion source to the at least one surface for desorbing contamination particles from the at least one surface by the ion flux impinging on the at least one surface.

Abstract: A charged particle beam source device adapted for generating a charged particle beam is provided. The charged particle beam source device includes an emitter tip adapted for providing charged particles. Furthermore, an extractor electrode having an aperture opening is provided for extracting the charged particles from the emitter tip. An aperture angle of the charged particle beam is 2 degrees or below the aperture angle being defined by a width of the aperture opening and a distance between the emitter tip and the extractor electrode, wherein the distance between the emitter tip and the extractor electrode is a range from 0.1 mm to 2 mm.

Abstract: A gun arrangement configured for generating a primary electron beam for a wafer imaging system is described. The arrangement includes a controller configured for switching between a normal operation and a cleaning operation, a field emitter having an emitter tip adapted for providing electrons and emitting an electron beam along an optical axis, an extractor electrode adapted for extracting the electron beam from the emitter tip electrode, a suppressor electrode, and at least one auxiliary emitter electrode arranged radially outside the suppressor electrode, and provided as a thermal electron emitter for thermally emitting electrons towards the optical axis.

Abstract: A magnetic deflector assembly configured for scanning a primary electron beam and providing an upgrade kit for a wafer imaging system is described. The assembly includes at least one magnetic deflector for scanning the beam over the wafer in one direction, wherein the at least one magnetic deflector comprises at least two coils forming a pair of the at least two coils, wherein the number of turns in the at least two coils is 8 or less and wherein a maximum dimension of a cross-section of a coil-forming wire or of a coil forming conductor is 0.2 mm or less.

Abstract: A method and a device for stabilizing the emission current of an emitter of a charged particle beam device are provided. In the method, the emitter is operated under predetermined operation parameters including at least one voltage with a predetermined value. The method includes determining a first value of the emission current under the predetermined operation parameters and flash cleaning the emitter while a first electric field is applied to the emitter. The first electric field is generated by the at least one voltage having a first value of the at least one voltage, wherein the first value of the at least one voltage is provided in dependence of the determined first value of the emission current.

Abstract: A secondary charged particle detection device for detection of a signal beam is described. The device includes a detector arrangement having at least two detection elements with active detection areas, wherein the active detection areas are separated by a gap, a particle optics configured for separating the signal beam in a first portion of the signal beam and in at least one second portion of the signal beam, configured for focusing the first portion of the signal beam, and configured for deflecting and focusing the at least one second portion of the signal beam, wherein the particle optics includes a first electrode and at least one second electrode. Therein, the first electrode is an inner electrode and the at least one second electrode is provided radially outward of the first electrode.

Abstract: A deflector system for fast magnetic deflection of a charged particle beam is described. The deflector system includes a tube for separating the beam from the magnetic deflector coil arrangement, the tube having a middle section, at least a first end section, and a second end section, wherein a wall thickness of the middle section is lower than a wall thickness of at least one of the first end section and the second end section.

Abstract: A secondary charged particle detection device for detection of a signal beam is described. The device includes a detector arrangement having at least two detection elements with active detection areas, wherein the active detection areas are separated by a gap, a particle optics configured for separating the signal beam in a first portion of the signal beam and in at least one second portion of the signal beam, configured for focusing the first portion of the signal beam, and configured for deflecting and focusing the at least one second portion of the signal beam, wherein the particle optics includes a first electrode and at least one second electrode. Therein, the first electrode is an inner electrode and the at least one second electrode is provided radially outward of the first electrode.

Abstract: A charged particle beam device for inspecting a specimen includes a charged particle beam source adapted to generate a primary charged particle beam; an objective lens device adapted to direct the primary charged particle beam onto the specimen; a retarding field device adapted to accelerate secondary charged particles starting from the specimen, a first detector device having a central opening, includes at least two azimuthal detector segments for detecting secondary particles, wherein the objective lens device is adapted such that particles with different starting angles from the specimen exhibit crossovers at substantially the same distance from the specimen between the objective lens and the detector device, and an aperture located between the objective lens and the crossovers, having an opening which is equal to or smaller than the central opening in the detector device.