Abstract: An apparatus for patterned processing includes a source of input gas, a source of energy suitable for generating a plasma from the input gas in a plasma region and a grounded sample holder configured for receiving a solid sample. The apparatus includes a mask arranged between the plasma region and the grounded sample holder, the mask having a first face oriented toward the plasma region and a second face oriented toward a surface of the solid sample to be processed, the mask including a mask opening extending from the first face to the second face, and an electrical power supply adapted for applying a direct-current bias voltage to the mask, and the mask opening being dimensioned and shaped so as to generate spatially selective patterned processing on the surface of the solid sample.

Abstract: An apparatus for patterned processing includes a source of input gas, a source of energy suitable for generating a plasma from the input gas in a plasma region and a grounded sample holder configured for receiving a solid sample. The apparatus includes a mask arranged between the plasma region and the grounded sample holder, the mask having a first face oriented toward the plasma region and a second face oriented toward a surface of the solid sample to be processed, the mask including a mask opening extending from the first face to the second face, and an electrical power supply adapted for applying a direct-current bias voltage to the mask, and the mask opening being dimensioned and shaped so as to generate spatially selective patterned processing on the surface of the solid sample.

Abstract: Disclosed is a plasma generating apparatus, for manufacturing devices having patterned layers, including a first electrode assembly and a second electrode assembly placed in a plasma reactor chamber, an electrical power supply for generating a voltage difference between the first electrode assembly and the second electrode assembly. The first electrode assembly includes a plurality of protrusions and a plurality of recesses, the protrusions and recesses being dimensioned and set at respective distances from the surface of the substrate so as to generate a plurality of spatially isolated plasma zones located selectively either between the second electrode assembly and the plurality of recesses or between the second electrode assembly and the plurality of protrusions.

Abstract: The invention relates to a process for texturing the surface of a silicon substrate, comprising a step of exposing said surface to an MDECR plasma generated, at least from argon, using between 1.5 W/cm2 and 6.5 W/cm2 of plasma power in a matrix distributed electron cyclotron resonance plasma source, the substrate bias being between 100 V and 300 V.

Abstract: An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.

Abstract: A plasma excitation device is described for use in depositing a film on a substrate from a plasma formed by distributed electron cyclotron resonance. The device comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna.

Abstract: A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse.

Abstract: A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600° C., preferably 225-350° C. and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range ?30 to ?105V, preferably using a source of RF power in the range of 50-250 mW/cm2 of the area of the substrate holder.

Abstract: A method is described of forming a film of an amorphous material on a substrate (14) by deposition from a plasma. The substrate (14) is placed in an enclosure, a film precursor gas is introduced into the enclosure through pipes (20), and unreacted and dissociated gas is extracted from the enclosure through pipes (22) so as to provide a low pressure therein. Microwave energy—is introduced into the gas within the enclosure as a sequence of pulses at a given frequency and power level to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The frequency and/or power level of the pulses is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.

Abstract: A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure therein. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The said flow rate of the film precursor gas is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.

Abstract: An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.

Abstract: A method is disclosed for forming a film of an amorphous material, for example amorphous silicon, on a substrate (14), by deposition from a plasma. A substrate is placed in an enclosure having a defined volume, and a film precursor gas, for example silane, is introduced into the enclosure through pipes (20). Unreacted and dissociated gas is extracted from the enclosure through exit (22) so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distribution electron cyclotron resonance, and cause material to be deposited from the plasma on the substrate. The normalised precursor gas flow rate, defined as the precursor gas flow rate, divided by the area of the distributed plasma source, is greater than or equal to 700 sccm/m2, and the gas residence time, defined as the volume of the reactor divided by the effective precursor gas pumping rate, is not more than 30 ms.

Abstract: A method is described of forming a film of an amorphous material on a substrate (14) by deposition from a plasma. The substrate (14) is placed in an enclosure, a film precursor gas is introduced into the enclosure through pipes (20), and unreacted and dissociated gas is extracted from the enclosure through pipes (22) so as to provide a low pressure therein. Microwave energy—is introduced into the gas within the enclosure as a sequence of pulses at a given frequency and power level to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The frequency and/or power level of the pulses is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.

Abstract: A plasma excitation device is described for use in depositing a film on a substrate from a plasma formed by distributed electron cyclotron resonance. The device comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna.

Abstract: An apparatus for generating a plasma includes a vacuum chamber having a wall and a plasma source including one or more devices for exciting the plasma, and elements for generating a constant magnetic field around the plasma to couple microwave energy into plasma at electron cyclotron resonance, each of the devices for exciting the plasma including a coaxial microwave connector able to be connected to a microwave energy source and a loop antenna able to emit a microwave energy for exciting the plasma. The loop antenna of the one or more devices is positioned inside the vacuum chamber in order to be in contact with the plasma and the elements for generating a constant magnetic field include at least two magnetic dipoles placed on the wall of the vacuum chamber, each of the one or more devices for exciting the plasma having the two magnetic dipoles placed on both sides.

Abstract: A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600° C., preferably 225-350° C. and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range ?30 to ?105V, preferably using a source of RF power in the range of 50-250 mW/cm2 of the area of the substrate holder.

Abstract: A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure therein. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The said flow rate of the film precursor gas is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.

Abstract: A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse.