Patents by Inventor Pavel DUTTA

Pavel DUTTA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High mobility silicon on flexible substrates
    Patent number: 11417519
    Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm?3.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: August 16, 2022
    Assignee: University of Houston System
    Inventors: Venkat Selvamanickam, Pavel Dutta, Ying Gao
  • High Mobility Silicon on Flexible Substrates
    Publication number: 20200411306
    Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm?3.
    Type: Application
    Filed: September 14, 2020
    Publication date: December 31, 2020
    Inventors: Venkat Selvamanickam, Pavel Dutta, Ying Gao
  • High mobility silicon on flexible substrates
    Patent number: 10777408
    Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm?3.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: September 15, 2020
    Assignee: University of Houston System
    Inventors: Venkat Selvamanickam, Pavel Dutta, Ying Gao
  • High Mobility Silicon on Flexible Substrates
    Publication number: 20190006170
    Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm?3.
    Type: Application
    Filed: December 8, 2016
    Publication date: January 3, 2019
    Applicant: University of Houston System
    Inventors: Venkat SELVAMANICKAM, Pavel DUTTA, Ying GAO