Abstract: There is disclosed a liquid cooler for semiconductor power elements, the cooler having an external surface for bearing against the cooled element. The internal space of the cooler is formed so as to generate a whirling motion of the cooling medium supplied thereto.

Abstract: A power semiconductor device for efficient heat dissipation. The construction eliminates a loose contact between the semiconductor element and a cooling jig.

Abstract: An improved construction for a two or three terminal power semiconductive device provides efficient thermal and electrical conduction between the heat-generating semiconductive wafer and the associated terminal electrodes with the use of a permanent, flowable thin layer of liquid metal therebetween. The liquid metal is carried in annular reservoirs within the outer surfaces of the terminal electrodes confronting the planar surfaces of the wafer, and serve to conduct the heat from the wafer to a hollow heat-dissipating well within the terminal electrodes. The wall of the well is made porous or is otherwise configured or reinforced to effectively increase the surface area thereof to aid in heat dissipation. If desired, an auxiliary seal-bearing groove is disposed concentric with and radially inwardly of the reservoir on at least one of the terminal electrodes, such groove bearing an O-ring or similar seal which bears against the confronting surface of the wafer to confine the flow of the liquid metal layer.

Abstract: A flat surface of a planar power semiconductive element, such as a thyristor or diode, is adjustably urged downwardly against a heat sink in electrical and thermal contact therewith by means of a spring-loaded eccentric element. The spring extends transversely over the opposite surface of the semiconductive element between a pair of anchor members carried by the heat sink. The eccentric is secured to an intermediate portion of the transversely extending spring, and is adapted to rotate in a vertical plane whereby successive portions of the eccentric periphery are urged with different pressures downwardly against the opposed surface of the semiconductive element, either directly or through an insulating spacer element. If desired, a pair of flattened abutment areas may be established on diametrically opposed portions of the eccentric periphery to correspondingly define a two-position stable adjustment of the bearing pressure.

Abstract: A high-power semiconductive device having a conductive liquid for maintaining contact between the active semiconductive element and the associated current supply and feeding facilities is described. A resilient insulating ring disposed in contact with the periphery of the active semiconductive element is contacted on respectively opposite sides by a pair of heat-conductive tubes that serve as the current supply elements of the device. A pair of conductive plates disposed on opposite sides of the semiconductive element are secured to the sides of the heat-conductive tubes to close off a pair of mutually insulated chambers which are bounded on the other side by the terminal areas of the semiconductive element. The conductive liquid is disposed in each of the so-defined chambers to provide thermal and electrical contact between the heat-conductive tubes and the terminal areas of the semiconductive element.

Abstract: A semi-conductor cooling system formed of a container having a wall portion made of soft yieldable material which is adapted to contact the surface of a semi-conductor device. A porous member is disposed within the container adjacent the inner surface of the yieldable wall. A liquid medium partially fills the remainder of the chamber immersing at least a portion of the porous member. The latent heat of the semi-conductor device is dissipated via the porous member in a closed evaporator-condensing cycle.

Abstract: A semi-conductor cooling system formed of a container having a wall portion made of soft yieldable material which is adapted to contact the surface of a semi-conductor device. A porous member is disposed within the container adjacent the inner surface of the yieldable wall. A liquid medium partially fills the remainder of the chamber immersing at least a portion of the porous member. The latent heat of the semiconductor device is dissipated via the porous member in a closed evaporator-condensing cycle.