Abstract: The present invention relates to a thin-film transistor which comprises a conductive and predominantly continuous carbon-based layer (3) comprising predominantly planar graphene-like structures. The graphene-like structures may be in the following various forms: planar graphene-like nanoribbons oriented predominantly perpendicularly to the carbon-based layer surface or planar graphene-like sheets oriented predominantly parallel to the carbon-based layer surface. The carbon-based layer thickness is in the range from approximately 1 to 1000 nm.

Abstract: An integrated circuit (IC) includes an interconnect system made of electrically conducting ribtan material. The integrated circuit includes a substrate, a set of circuit elements that are formed on the substrate, an interconnect system that interconnects the circuit elements. At least part of the interconnect system is made of a metallic ribtan material.

Abstract: The present invention relates generally to the field of electronics. More specifically, the present invention relates to film and device using layer based on carbon-based ribtan material. According to present invention, the film comprises at least one optically transparent and electrically conductive layer based on a ribtan material.