Abstract: In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets having a coaxial (preferably frusto-conical) relationship to modify the distribution of ion and electron currents flowing from the plasma discharge to a substrate residing within a sputter chamber. A stress adjustment circuit is used to modify the ion bombardment of the growing films on the substrate resulting in a mechanism for control of the stress in the deposited films. In a preferred embodiment, the adjustment circuit comprises a variable resistor disposed between an internal shield that acts as a passive anode and a target. The value of the variable resistor influences the plasma discharge current distribution between the split sputter targets and the internal shields, and can effectively be used to adjust the properties of the deposited films.

Abstract: In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets having a coaxial (preferably frusto-conical) relationship to modify the distribution of ion and electron currents flowing from the plasma discharge to a substrate residing within a sputter chamber. A stress adjustment circuit is used to modify the ion bombardment of the growing films on the substrate resulting in a mechanism for control of the stress in the deposited films. In a preferred embodiment, the adjustment circuit comprises a variable resistor disposed between an internal shield that acts as a passive anode and a target. The value of the variable resistor influences the plasma discharge current distribution between the split sputter targets and the internal shields, and can effectively be used to adjust the properties of the deposited films.

Abstract: In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets having a coaxial (preferably frusto-conical) relationship to modify the distribution of ion and electron currents flowing from the plasma discharge to a substrate residing within a sputter chamber. A stress adjustment circuit is used to modify the ion bombardment of the growing films on the substrate resulting in a mechanism for control of the stress in the deposited films. In a preferred embodiment, the adjustment circuit comprises a variable resistor disposed between an internal shield that acts as a passive anode and a target. The value of the variable resistor influences the plasma discharge current distribution between the split sputter targets and the internal shields, and can effectively be used to adjust the properties of the deposited films.

Abstract: In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets having a coaxial (preferably frusto-conical) relationship to modify the distribution of ion and electron currents flowing from the plasma discharge to a substrate residing within a sputter chamber. A stress adjustment circuit is used to modify the ion bombardment of the growing films on the substrate resulting in a mechanism for control of the stress in the deposited films. In a preferred embodiment, the adjustment circuit comprises a variable resistor disposed between an internal shield that acts as a passive anode and a target. The value of the variable resistor influences the plasma discharge current distribution between the split sputter targets and the internal shields, and can effectively be used to adjust the properties of the deposited films.

Abstract: A two step thin film deposition process is disclosed to provide for the simultaneous achievement of controlled stress and the achievement of preferred crystalline orientation in sputter-deposited thin films. In a preferred embodiment, a first relatively short deposition step is performed without substrate bias to establish the crystalline orientation of the deposited film followed by a second, typically relatively longer deposition step with an applied rf bias to provide for low or no stress conditions in the growing film. Sputter deposition without substrate bias has been found to provide good crystal orientation and can be influenced through the crystalline orientation of the underlying layers and through the introduction of intentionally oriented seed layers to promote preferred crystalline orientation. Conversely, sputter deposition with substrate bias has been found to provide a means for producing stress control in growing films.

Abstract: First and second electrodes at opposite ends and magnets between the electrodes define an enclosure. Inert gas (e.g. argon) molecules pass into the enclosure through an opening near the first electrode and from the enclosure through an opening near the second electrode. A ring near the first electrode, a plate near the second electrode and the magnets are at a reference potential (e.g. ground). The first electrode is biased at a high voltage by a high alternating voltage to produce a high intensity negative electrical field. The second electrode is biased at a low negative voltage by a low alternating voltage to produce a low intensity negative electrical field. Electrons movable in a helical path in the enclosure near the first electrode ionize inert gas molecules. A wafer having a floating potential and an insulating layer is closely spaced from the second electrode.

Abstract: First and second electrodes and magnets between the electrodes define an enclosure. The first electrode is biased at a high voltage to produce a high intensity electrical field. The second electrode is biased at a low negative voltage by a low alternating voltage to produce a low intensity electrical field. Electrons movable in a helical path in the enclosure near the first electrode ionize inert gas molecules in the enclosure. A wafer having a floating potential and an insulating layer is closely spaced from the second electrode. The second electrode and the wafer define plates of a first capacitor having a high impedance. The wafer and the inert gas ions in the enclosure define opposite plates of a second capacitor. The first capacitor accordingly controls and limits the speed at which the gas ions move to the insulating layer surface to etch this surface. The resultant etch, only a relatively few angstroms, of the insulating layer is smooth, uniform and accurate.

Abstract: An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform thickness on the substrate surface (2) eliminate dielectric material from the surfaces of the targets and other components (3) provide a single ignition of the targets and eliminate target ignitions thereafter and (4) reduce the substrate temperature by using low energy (“cold”) electrons from a plasma discharge to produce a low energy current. The asymmetry may result from amplitude differences between the voltage in alternate half cycles and the voltage in the other half cycles. A second alternating voltage (preferably radio frequency) modulates the asymmetric alternating voltage to provide the smooth plasma ignition.

Abstract: An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform thickness on the substrate surface (2) eliminate dielectric material from the surfaces of the targets and other components (3) provide a single ignition of the targets and eliminate target ignitions thereafter and (4) reduce the substrate temperature by using low energy (“cold”) electrons from a plasma discharge to produce a low energy current. The asymmetry may result from amplitude differences between the voltage in alternate half cycles and the voltage in the other half cycles. A second alternating voltage (preferably radio frequency) modulates the asymmetric alternating voltage to provide the smooth plasma ignition.

Abstract: First and second electrodes and magnets between the electrodes define an enclosure. The first electrode is biased at a high voltage to produce a high intensity electrical field. The second electrode is biased at a low negative voltage by a low alternating voltage to produce a low intensity electrical field. Electrons movable in a helical path in the enclosure near the first electrode ionize inert gas molecules in the enclosure. A wafer having a floating potential and an insulating layer is closely spaced from the second electrode. The second electrode and the wafer define plates of a first capacitor having a high impedance. The wafer and the inert gas ions in the enclosure define opposite plates of a second capacitor. The first capacitor accordingly controls and limits the speed at which the gas ions move to the insulating layer surface to etch this surface. The resultant etch, only a relatively few angstroms, of the insulating layer is smooth, uniform and accurate.

Abstract: First and second electrodes at opposite ends and magnets between the electrodes define an enclosure. Inert gas (e.g. argon) molecules pass into the enclosure through an opening near the first electrode and from the enclosure through an opening near the second electrode. A ring near the first electrode, a plate near the second electrode and the magnets are at a reference potential (e.g. ground). The first electrode is biased at a high voltage by a high alternating voltage to produce a high intensity negative electrical field. The second electrode is biased at a low negative voltage by a low alternating voltage to produce a low intensity negative electrical field. Electrons movable in a helical path in the enclosure near the first electrode ionize inert gas molecules. A wafer having a floating potential and an insulating layer is closely spaced from the second electrode.