Patents by Inventor Pavel Nesladek

Pavel Nesladek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110027699
    Abstract: The deterioration of photomasks caused by chromium migration in COG masks may be reduced or suppressed by avoiding substantially pure chromium materials or encapsulating these materials, since the chromium layer has been identified as a major contributor to the chromium diffusion.
    Type: Application
    Filed: July 13, 2010
    Publication date: February 3, 2011
    Inventors: Anna Tchikoulaeva, Eugen Foca, Pavel Nesladek
  • Publication number: 20080318139
    Abstract: Mask blanks of the invention include an absorber layer, an anti-reflective layer disposed over the absorber layer, and a hard mask layer disposed over the anti-reflective layer. The absorber layer is absorbent at an exposure wavelength and is reflective at an inspection wavelength. The inspection wavelength is greater than or equal to the exposure wavelength. The anti-reflective layer is not reflective at the inspection wavelength. None of the main constituents of the hard mask layer has an atomic number greater than 41. The mask blank may be a reflective EUVL mask blank or a transparent mask blank.
    Type: Application
    Filed: June 23, 2008
    Publication date: December 25, 2008
    Applicant: ADVANCED MASK TECHNOLOGY CENTER GMBH & CO. KG
    Inventors: Uwe Dersch, Haiko Rolff, Pavel Nesladek
  • Publication number: 20050016468
    Abstract: An inner contour of the compensation frame (2) is configured in polygonal fashion in order to receive the substrate (1). With the substrate (1) having been received, the compensation frame (2) encloses the substrate (1) at the outer edge thereof. A partial region (3a) of an upper main area (3) of the compensation frame (2) runs at a given height (h) above the plane of an upper main area (1a) of the substrate (1) when the latter has been received into the compensation frame (2). Moreover, a further partial region (3b) of the upper main area (3) of the compensation frame runs essentially at the same height as the plane of the upper main area (3) of the substrate (1) when the latter has been received into the compensation frame (2).
    Type: Application
    Filed: December 23, 2003
    Publication date: January 27, 2005
    Inventors: Guenther Ruhl, Gerhard Prechtl, Winfried Sabisch, Alfred Kersch, Pavel Nesladek, Fritz Gans, Rex Anderson