Patents by Inventor Pavel S. Kobyakov

Pavel S. Kobyakov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8956698
    Abstract: Systems and methods for depositing complex thin-film alloys on substrates are provided. In particular, systems and methods for the deposition of thin-film Cd1-xMxTe ternary alloys on substrates using a stacked-source sublimation system are provided, where M is a metal such as Mg, Zn, Mn, and Cu.
    Type: Grant
    Filed: April 7, 2014
    Date of Patent: February 17, 2015
    Assignee: Colorado State University Research Foundation
    Inventors: Walajabad S. Sampath, Pavel S. Kobyakov, Kevin E. Walters, Davis R. Hemenway
  • Publication number: 20140205768
    Abstract: Systems and methods for depositing complex thin-film alloys on substrates are provided. In particular, systems and methods for the deposition of thin-film Cd1-xMxTe ternary alloys on substrates using a stacked-source sublimation system are provided, where M is a metal such as Mg, Zn, Mn, and Cu.
    Type: Application
    Filed: April 7, 2014
    Publication date: July 24, 2014
    Applicant: Colorado State University Research Foundation
    Inventors: Walajabad S. Sampath, Pavel S. Kobyakov, Kevin E. Walters, Davis R. Hemenway
  • Patent number: 8778081
    Abstract: Systems and methods for depositing complex thin-film alloys on substrates are provided. In particular, systems and methods for the deposition of thin-film Cd1-xMxTe ternary alloys on substrates using a stacked-source sublimation system are provided, where M is a metal such as Mg, Zn, Mn, and Cu.
    Type: Grant
    Filed: January 3, 2013
    Date of Patent: July 15, 2014
    Assignee: Colorado State University Research Foundation
    Inventors: Walajabad S. Sampath, Pavel S. Kobyakov, Kevin E. Walters, Davis R. Hemenway
  • Publication number: 20120322198
    Abstract: A method for sublimating a thin film of Magnesium (Mg) on a semiconductor structure for improved efficiency is described. One embodiment includes a method comprised of providing a semiconductor substrate in a vacuum chamber, wherein the substrate comprises a window layer and an absorber layer made of CdTe. The method further includes heating the substrate to a diffusion temperature or greater followed by depositing a Mg film on the absorber layer using a sublimation process, wherein at least a portion of the Mg forms a Cd1-xMgxTe alloy within the absorber layer.
    Type: Application
    Filed: June 18, 2012
    Publication date: December 20, 2012
    Inventors: Pavel S. Kobyakov, W. S. Sampath, Kevin E. Walters, Jason M. Kephart, Keegan Barricklow