Abstract: An implant comprises a metal body having a ceramic coating comprising monoclinic and orthorhombic phases of zirconium oxide ZrO2 and at least one multi-metal phosphate from the group comprising l-IV metal phosphates. A method of forming an implant is provided. A method of applying a ceramic coating to a metal body comprises the step of electrochemical oxidation of at least a portion of the surface of a metal body in aqueous electrolyte; in which the electrolyte contains at least two elements from a group consisting of zirconium, titanium, magnesium, phosphorus, calcium, fluoride, potassium, sodium, strontium, sulphur, argentum, zinc, copper, silicon, gallium; in which electrochemical oxidation is conducted in a plasma discharge (PEO) mode for at least one interval of time, and non-discharge modes for at least two intervals of time.

Abstract: A flexible electronic substrate (FES) includes a metallic layer, a dielectric nanoceramic layer formed by oxidation of a surface of the metallic layer, and an electrical circuit formed on a surface of the dielectric layer. The FES may be used for supporting a device, for example a flexible display, an OLED, an optoelectronic device, or a rf device. The dielectric nanoceramic layer has a crystalline structure consisting of substantially equiaxed grains having an average grain size of 100 nanometers or less, a thickness of between 1 micrometer and 50 micrometers, a dielectric strength of greater than 20 KV mm?1, and a thermal conductivity of greater than 3 W/mK. The FES has a minimum bend radius of lower than 25 cm.

Abstract: A method of forming a non-metallic coating on a metallic substrate involves the steps of positioning the metallic substrate in an electrolysis chamber and applying a sequence of voltage pulses of alternating polarity to electrically bias the substrate with respect to an electrode. Positive voltage pulses anodically bias the substrate with respect to the electrode and negative voltage pulses cathodically bias the substrate with respect to the electrode. The amplitude of the positive voltage pulses is potentiostatically controlled, whereas the amplitude of the negative voltage pulses is galvanostatically controlled.

Abstract: An insulated metal substrate (IMS) for supporting a device comprises a metallic substrate having a ceramic coating formed at least in part by oxidation of a portion of the surface of the metallic substrate. The ceramic coating has a dielectric strength of greater than 50 KV mm?1 and a thermal conductivity of greater than 5 Wm?1K?1.

Abstract: A flexible electronic substrate (FES) includes a metallic layer, a dielectric nanoceramic layer formed by oxidation of a surface of the metallic layer, and an electrical circuit formed on a surface of the dielectric layer. The FES may be used for supporting a device, for example a flexible display, an OLED, an optoelectronic device, or a rf device. The dielectric nanoceramic layer has a crystalline structure consisting of substantially equiaxed grains having an average grain size of 100 nanometres or less, a thickness of between 1 micrometre and 50 micrometres, a dielectric strength of greater than 20 KV mm?1, and a thermal conductivity of greater than 3 W/mK. The FES has a minimum bend radius of lower than 25 cm.

Abstract: A metal substrate with insulated vias (MSIV) has a metallic layer with through-holes defined through a thickness of the layer, a dielectric layer formed on part of the surface of the metallic layer and extending to cover internal walls of the through-hole, a conductive material extending through the insulated through-hole to form an insulated via, and an electrical circuit formed on a portion of the dielectric layer in thermal and/or electrical contact with the conductive via. The dielectric layer is a dielectric nanoceramic layer having an equiaxed crystalline structure with an average grain size of 500 nanometres or less, a thickness of between 0.1 and 100 micrometres, a dielectric strength of greater than 20 KV mm?1, and a thermal conductivity of greater than 3 W/mK. Such a MSIV can be used as an electronic substrate to support devices such as power, microwave, optoelectronic, solid-state lighting and thermoelectric devices.

Abstract: A method of forming a non-metallic coating on a metallic substrate involves the steps of positioning the metallic substrate in an electrolysis chamber and applying a sequence of voltage pulses of alternating polarity to electrically bias the substrate with respect to an electrode. Positive voltage pulses anodically bias the substrate with respect to the electrode and negative voltage pulses cathodically bias the substrate with respect to the electrode. The amplitude of the positive voltage pulses is potentiostatically controlled, wheras the amplitude of the negative voltage pulses is galvanostatically controlled.

Abstract: An insulated metal substrate (IMS) for supporting a device comprises a metallic substrate having a ceramic coating formed at least in part by oxidation of a portion of the surface of the metallic substrate. The ceramic coating has a dielectric strength of greater than 50 KV mm?1 and a thermal conductivity of greater than 5 Wm?1K?1.