Abstract: Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area of a third of the STI trenches; removing dielectric material from the third STI trench; forming a gate stack having a first portion located between the first and the second of the STI trenches and a second portion located over and extending into the third trench; and performing a source/drain implant of the same polarity as the second cell well, thereby forming a FET in the first cell well, and a capacitor in the second cell well. The second polarity may be opposite from the first polarity. An additional implant may reduce ESR in the second cell well.

Abstract: A high-density plasma chemical vapor deposition tool and the method for use of the tool is disclosed. The chemical vapor deposition tool allows for angular adjustment of the pedestal that holds the substrate being manufactured. Electromagnets serve as an “electron filter” that allows for angular deposition of material onto the substrate. Methods for fabrication of trench structures and asymmetrical spacers in a semiconductor manufacturing process are also disclosed. The angular deposition saves process steps, thereby reducing time, complexity, and cost of manufacture, while improving overall product yield.

Abstract: Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area of a third of the STI trenches; removing dielectric material from the third STI trench; forming a gate stack having a first portion located between the first and the second of the STI trenches and a second portion located over and extending into the third trench; and performing a source/drain implant of the same polarity as the second cell well, thereby forming a FET in the first cell well, and a capacitor in the second cell well. The second polarity may be opposite from the first polarity. An additional implant may reduce ESR in the second cell well.

Abstract: Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area of a third of the STI trenches; removing dielectric material from the third STI trench; forming a gate stack having a first portion located between the first and the second of the STI trenches and a second portion located over and extending into the third trench; and performing a source/drain implant of the same polarity as the second cell well, thereby forming a FET in the first cell well, and a capacitor in the second cell well. The second polarity may be opposite from the first polarity. An additional implant may reduce ESR in the second cell well.

Abstract: An apparatus which allows tightly coupling of the device wafer to the electrostatic chuck of the process chamber after the process chamber is conditioned. The apparatus includes (a) a process chamber; (b) a chuck in the process chamber; (c) a guard wafer placed on and in direct physical contact with the chuck; and (d) a particle restraining layer on essentially all surfaces that are exposed to the ambient inside the process chamber. The particle restraining layer has a thickness in a first direction of at least 500 nm. The first direction is essentially perpendicular to an interfacing surface between the particle restraining layer and the chuck. The guard wafer comprises a material selected from the group consisting of a metal and a semiconductor oxide.

Abstract: Waste rubber in the from of crumbs, mainly from automobile tires, but also from other used rubber products including waste rubber formed in the course of their manufacturing, is mixed in a kneader, calender, or extruder with a compound containing the chemical group —SO2—NH—. Subsequently, at temperatures up to 180° C. the rubber crumbs are de-vulcanized within 15-20 minutes, the de-vulcanization degree being controlled by the de-vulcanization agent concentration, and time and temperature of de-vulcanization. After the eventual addition of small amounts of extenders as oil, soot, raw rubber, inorganic filler and the vulcanization agent a vulcanization mixture is obtained that after pressing into the shape of the rubber product is subjected to a standard vulcanization process.

Abstract: An apparatus which allows tightly coupling of the device wafer to the electrostatic chuck of the process chamber after the process chamber is conditioned. The apparatus includes (a) a process chamber; (b) a chuck in the process chamber; (c) a guard wafer placed on and in direct physical contact with the chuck; and (d) a particle restraining layer on essentially all surfaces that are exposed to the ambient inside the process chamber. The particle restraining layer has a thickness in a first direction of at least 500 nm. The first direction is essentially perpendicular to an interfacing surface between the particle restraining layer and the chuck. The guard wafer comprises a material selected from the group consisting of a metal and a semiconductor oxide.

Abstract: An apparatus (and method for operating the same) which allows tightly coupling the device wafer to the electrostatic chuck of the process chamber after the process chamber is conditioned. The method comprises (a) providing (i) a process chamber and (ii) an electrostatic chuck in the process chamber; (b) placing a guard wafer on the electrostatic chuck via a top surface of the electrostatic chuck; and (c) forming a particle restraining layer on essentially all surfaces that are exposed to the ambient inside the process chamber, wherein the particle restraining layer has a thickness in a first direction of at least 500 ?, wherein the first direction is essentially perpendicular to an interfacing surface between the particle restraining layer and an inner surface of the process chamber, and wherein the guard wafer comprises a material selected from the group consisting of a metal and a semiconductor oxide.

Abstract: An apparatus (and method for operating the same) which allows tightly coupling the device wafer to the electrostatic chuck of the process chamber after the process chamber is conditioned. The method comprises (a) providing (i) a process chamber and (ii) an electrostatic chuck in the process chamber; (b) placing a guard wafer on the electrostatic chuck via a top surface of the electrostatic chuck; and (c) forming a particle restraining layer on essentially all surfaces that are exposed to the ambient inside the process chamber, wherein the particle restraining layer has a thickness in a first direction of at least 500 ?, wherein the first direction is essentially perpendicular to an interfacing surface between the particle restraining layer and an inner surface of the process chamber, and wherein the guard wafer comprises a material selected from the group consisting of a metal and a semiconductor oxide.

Abstract: An integrated circuit plasma processing system, apparatus and method for reclaiming material, such as a plasma precursor and potentially useful components among their byproducts, from plasma-enhanced exhaust of a plasma process chamber for subsequent reuse in the chamber. The apparatus provides a recycle feedback loop for a plasma process chamber that provides the high purity materials necessary for microelectronic applications. Since the apparatus is in-situ, no byproducts that are not already present are possible. Accordingly, the apparatus guarantees purity of the recycled material. In addition to cost savings, the invention provides an environmentally friendly plasma process chamber and apparatus with very little production of waste.

Abstract: A method and apparatus for removing a deposited layer on a bottom surface of a substrate, the deposited layer proximate to an edge of the substrate. The method comprises: providing a chuck for supporting the bottom surface of the substrate, an peripheral portion of the bottom surface proximate to the edge extending past a periphery of the chuck; positioning a shield spaced away from and over a top surface of the substrate, a bottom surface of the shield opposite a top surface of the substrate; directing a reactant containing gas to the bottom surface of the substrate proximate to the edge of the substrate; and converting the reactant gas to a reactant species, the reactant species reacting with the deposited layer in order to cause removal of the deposited layer from the substrate.

Abstract: The present invention relates generally to the field of semiconductor device manufacturing, and more specifically to a method for cleaning and preconditioning a dome in a chemical vapor deposition system. During cleaning, the direction of flow of cooling water through an induction coil in the dome is reversed. During preconditioning, the direction of cooling water flow is preferably reversed again, such that it is the same direction as during deposition. The preconditioning portion of the method comprises introducing a hydrogen gas into the CVD chamber, and then introducing a mixture of hydrogen gas and nitrogen gas into the chamber.

Abstract: The present invention relates generally to the field of semiconductor device manufacturing, and more specifically to a method for cleaning and preconditioning a dome in a chemical vapor deposition system. During cleaning, the direction of flow of cooling water through an induction coil in the dome is reversed. During preconditioning, the direction of cooling water flow is preferably reversed again, such that it is the same direction as during deposition. The preconditioning portion of the method comprises introducing a hydrogen gas into the CVD chamber, and then introducing a mixture of hydrogen gas and nitrogen gas into the chamber.

Abstract: A cooling structure and a reinforcing structure are described for use with a radio-frequency coil in an ionized physical vapor deposition apparatus. The cooling structure includes a portion for carrying coolant and is proximate to the RF coil along the outer circumference thereof. The cooling structure is shaped relative to the RF coil so that thermal expansion of the RF coil brings the RF coil into close contact with the cooling structure, thereby facilitating heat transfer from the RF coil to the coolant. The reinforcing structure is similarly shaped, and may be integrated with the cooling structure. In addition, the RF coil or cooling/reinforcing structure may be mounted to the wall of the process chamber with telescoping mounting posts, which permit the RF coil to maintain its shape while undergoing thermal expansion. The parasitic inductance of the RF coil leads is reduced by arranging those leads coaxially, thereby minimizing power losses in the RF coil.

Abstract: Improvements are described for a wafer clamp ring used in an IPVD apparatus to provide cooling for the wafer clamp ring, to protect the wafer clamp ring from ion bombardment, and to prevent damage to the wafer. The wafer clamp ring is placed on a cooling fixture when not required for a deposition process. The fixture is annular in shape and in close thermal contact with a circulating coolant and is thereby cooled below ambient temperature. The cooling line and the cooling fixture are fixed relative to the IPVD device, so that problems associated with flexible cooling lines are avoided. An annular grounded shield may be provided between the plasma and clamp ring to protect the clamp ring against ion bombardment during the deposition process. The wafer clamp ring may have a portion which overhangs the wafer during a deposition process, and which has a ridge portion extending downwards therefrom and tapering to a knife edge.

Abstract: A multiprobe apparatus for probing a device having a plurality of contacts includes a holder for holding the device in a fixed position; a plurality of electrically conducting elongated probes, each probe being adapted for electrical communication with a respective one of the contacts by tangential linear contact along the length of the probe; and a probe support for supporting the probes and for maintaining the probes in electrical communication with the contacts.

Abstract: A semiconductor structure including a doped semiconductor substrate defining a surface. A buffer layer of epitaxial semiconductor material overlies the substrate surface, the buffer layer having a relatively higher dopant concentration than the substrate and being virtually free from oxygen precipitation. A layer of intrinsic semiconductor material overlies the buffer layer, and a device layer of epitaxial semiconductor material is situated on the intrinsic layer. The device layer is formed to have a relatively lower dopant concentration than the first layer. Isolation regions extend from a surface of the device layer into the buffer layer for forming an electrically isolated device region in the device layer. At least one active device is formed in the isolated device region.

Abstract: A semiconductor structure including a doped semiconductor substrate defining a surface. A buffer layer of epitaxial semiconductor material overlies the substrate surface, the buffer layer having a relatively higher dopant concentration than the substrate and being virtually free from oxygen precipitation. A layer of intrinsic semiconductor material overlies the buffer layer, and a device layer of epitaxial semiconductor material is situated on the intrinsic layer. The device layer is formed to have a relatively lower dopant concentration than the first layer. Isolation regions extend from a surface of the device layer into the buffer layer for forming an electrically isolated device region in the device layer. At least one active device is formed in the isolated device region.

Abstract: An improvement in the method and apparatus for growing a semiconductor crystal by the Czochralski technique comprising the steps of applying a rotating transverse magnetic field to molten semiconductor material held in a crucible during the seed crystal pulling and crystal formation step, to cause the molten material to rotate within the crucible, and simultaneously increasing the rotational velocity of the magnetic field during this crystal formation as a function of the length of the crystal pulled from said molten material to thereby vary the rotation rate of the molten material. These steps result in the uniform axial distribution of oxygen in the crystal.

Abstract: An apparatus and method are described for incorporating doping material into a single silicon crystal by an improved float zone (FZ) crystal growth method. A solid fused silica doping rod is inserted into a floating zone of molten silicon in a controlled manner, preferably via a generally radial hole through a radio-frequency induction coil. Oxygen doping, in a concentration of 1-25 ppm, is achieved by using a fused silica doping rod. N- or p-type dopants may be contained in the silica rod as impurities to provide n- or p-type doping concurrently with the oxygen doping.