Patents by Inventor Pavlo BIDENKO

Pavlo BIDENKO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optical phase shifter and optical switch device using ferroelectric material
    Patent number: 10901246
    Abstract: An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: January 26, 2021
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jae-Hoon Han, Sanghyeon Kim, Pavlo Bidenko, Subin Lee, Jin-Dong Song
  • OPTICAL PHASE SHIFTER AND OPTICAL SWITCH DEVICE USING FERROELECTRIC MATERIAL
    Publication number: 20200041825
    Abstract: An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.
    Type: Application
    Filed: August 1, 2019
    Publication date: February 6, 2020
    Inventors: Jae-Hoon HAN, Sanghyeon KIM, Pavlo BIDENKO, Subin LEE, Jin-Dong SONG