Patents by Inventor Pawan Kishore Singh

Pawan Kishore Singh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11610046
    Abstract: A document authoring application receives a text input including one or more alphanumeric characters. A glyph extraction module in the application determines graphical data describing glyphs of the alphanumeric characters. From the graphical data, the glyph extraction module extracts visual elements, each visual element including a color or an outline from the glyphs. The glyph extraction module generates a responsive font effect that includes the extracted visual element applied to one or more of an underline effect, a strikethrough effect, a bullet point effect, or a list dot effect. Responsive to a modification of the text input, the glyph extraction module extracts an additional visual element from an additional glyph associated with the modified text. The responsive font effect is modified to include the additional visual element. The user interface is updated to display the responsive font effect or the modified font effect.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: March 21, 2023
    Assignee: Adobe Inc.
    Inventors: Pawan Kishor Singh, Nirmal Kumawat, Saikat Chakrabarty
  • Patent number: 11367231
    Abstract: Systems and methods provide snap-line generation operations for live multi-path glyphs. In this regard, an attribute extraction component accesses a glyph description of a live multi-path glyph to determine and store several attributes related to at least one sub-path of the live multi-path glyph. The stored attributes are accessed by a snap-line generation component and used to determine whether an external object is moved near the live multi-path glyph. When moved near one another, a snap-line is generated along sub-path planes of the external object and the live multi-path glyph. Generated snap-lines are used to aid a user in aligning the two objects.
    Type: Grant
    Filed: October 22, 2020
    Date of Patent: June 21, 2022
    Assignee: Adobe Inc.
    Inventors: Nirmal Kumawat, Pawan Kishor Singh
  • Publication number: 20220130085
    Abstract: Systems and methods provide snap-line generation operations for live multi-path glyphs. In this regard, an attribute extraction component accesses a glyph description of a live multi-path glyph to determine and store several attributes related to at least one sub-path of the live multi-path glyph. The stored attributes are accessed by a snap-line generation component and used to determine whether an external object is moved near the live multi-path glyph. When moved near one another, a snap-line is generated along sub-path planes of the external object and the live multi-path glyph. Generated snap-lines are used to aid a user in aligning the two objects.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 28, 2022
    Inventors: Nirmal Kumawat, Pawan Kishor Singh
  • Publication number: 20210124796
    Abstract: A document authoring application receives a text input including one or more alphanumeric characters. A glyph extraction module in the application determines graphical data describing glyphs of the alphanumeric characters. From the graphical data, the glyph extraction module extracts visual elements, each visual element including a color or an outline from the glyphs. The glyph extraction module generates a responsive font effect that includes the extracted visual element applied to one or more of an underline effect, a strikethrough effect, a bullet point effect, or a list dot effect. Responsive to a modification of the text input, the glyph extraction module extracts an additional visual element from an additional glyph associated with the modified text. The responsive font effect is modified to include the additional visual element. The user interface is updated to display the responsive font effect or the modified font effect.
    Type: Application
    Filed: October 29, 2019
    Publication date: April 29, 2021
    Inventors: Pawan Kishor Singh, Nirmal Kumawat, Saikat Chakrabarty
  • Patent number: 10957703
    Abstract: An example embodiment comprises a method for fabrication of a non-volatile memory (NVM) device. An isolation structure is formed in a substrate between first and second locations for first and second NVM cells. A common charge trapping layer is formed as a continuous structure over the substrate, where a first portion of the charge trapping layer is disposed directly over the isolation structure and second portions of the charge trapping layer are disposed directly over the first and second substrate locations. Nitrogen doping of the first portion of the charge trapping layer is performed, where after the nitrogen doping is performed the first portion of the charge trapping layer includes a higher nitrogen concentration than the second portions. The first and second NVM cells are then formed over the first and second substrate locations, where the first and second NVM cells include the second portions of the charge trapping layer.
    Type: Grant
    Filed: August 6, 2018
    Date of Patent: March 23, 2021
    Assignee: Cypress Semiconductor Corporation
    Inventors: Pawan Kishore Singh, Shivananda Shetty, James Pak
  • Publication number: 20210064906
    Abstract: A glyph-aware method for underlining text in digital typography includes identifying first and second intersection coordinates where first and second bounds of an underline region of the text intersect with an outline path of a glyph in the text. Where such intersections occur, a portion of the outline path of the glyph between the first and second intersection coordinates is copied. First and second offset coordinates for the underline are determined by adding or subtracting an offset to the first and second intersection coordinates. A first underline outline path is constructed in the underline region, where the first underline outline path includes the copied of the outline path of the glyph between the first and second intersection coordinates. A display device renders an underline, at least partially, along the first underline outline path between the first and second offset coordinates in the underline region of the text.
    Type: Application
    Filed: August 30, 2019
    Publication date: March 4, 2021
    Applicant: Adobe Inc.
    Inventors: Pawan Kishor Singh, Nirmal Kumawat
  • Patent number: 10922575
    Abstract: A glyph-aware method for underlining text in digital typography includes identifying first and second intersection coordinates where first and second bounds of an underline region of the text intersect with an outline path of a glyph in the text. Where such intersections occur, a portion of the outline path of the glyph between the first and second intersection coordinates is copied. First and second offset coordinates for the underline are determined by adding or subtracting an offset to the first and second intersection coordinates. A first underline outline path is constructed in the underline region, where the first underline outline path includes the copied of the outline path of the glyph between the first and second intersection coordinates. A display device renders an underline, at least partially, along the first underline outline path between the first and second offset coordinates in the underline region of the text.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: February 16, 2021
    Assignee: Adobe Inc.
    Inventors: Pawan Kishor Singh, Nirmal Kumawat
  • Publication number: 20190074286
    Abstract: An example embodiment comprises a method for fabrication of a non-volatile memory (NVM) device. An isolation structure is formed in a substrate between first and second locations for first and second NVM cells. A common charge trapping layer is formed as a continuous structure over the substrate, where a first portion of the charge trapping layer is disposed directly over the isolation structure and second portions of the charge trapping layer are disposed directly over the first and second substrate locations. Nitrogen doping of the first portion of the charge trapping layer is performed, where after the nitrogen doping is performed the first portion of the charge trapping layer includes a higher nitrogen concentration than the second portions. The first and second NVM cells are then formed over the first and second substrate locations, where the first and second NVM cells include the second portions of the charge trapping layer.
    Type: Application
    Filed: August 6, 2018
    Publication date: March 7, 2019
    Applicant: Cypress Semiconductor Corporation
    Inventors: Pawan Kishore Singh, Shivananda Shetty, James Pak
  • Patent number: 10068912
    Abstract: A memory apparatus that has at least two non-volatile memory (NVM) cells disposed side by side overlying a substrate and an isolation structure disposed between the first and second NVM cells in the substrate. The first and second NVM cells share a common charge trapping layer that includes a continuous structure, and the portion of the common charge trapping layer that is disposed directly above the isolation structure includes a higher oxygen and/or nitrogen concentration than the portions of the common charge trapping layer that are disposed within the first and second NVM cells.
    Type: Grant
    Filed: June 5, 2017
    Date of Patent: September 4, 2018
    Assignee: Cypress Semiconductor Corporation
    Inventors: Pawan Kishore Singh, Shivananda Shetty, James Pak