Abstract: Different pages of a quad-level cell (QLC) memory can have different data retention characteristics. A controller of a data storage device can store selected data in relatively-lower data retention pages of the QLC block. For example, data for an internal data storage device operation can be stored in the relatively-lower data retention pages of QLC memory, and host data can be stored in the relatively-higher data retention pages of QLC memory. Other examples are provided.

Abstract: A data storage device initially stores incoming data from a host in single-level cell (SLC) blocks and later folds the data from those blocks into a multi-level cell (MLC) block. If an error is detected during the folding operation, the data storage device pauses the folding operation, programs data that failed to be program and other data from the initial SLC blocks into another SLC block, and then resumes the folding operation. This can be part of a dynamic runtime zoning process where the data storage device determines a set of wordlines that will fall under one zone at runtime during an enhanced post-write-read (EPWR) operation.

Abstract: A data storage device initially stores incoming data from a host in single-level cell (SLC) blocks and later folds the data from those blocks into a multi-level cell (MLC) block. If an error is detected during the folding operation, the data storage device pauses the folding operation, programs data that failed to be program and other data from the initial SLC blocks into another SLC block, and then resumes the folding operation. This can be part of a dynamic runtime zoning process where the data storage device determines a set of wordlines that will fall under one zone at runtime during an enhanced post-write-read (EPWR) operation.