Abstract: Embodiments of the invention include a trio of reliability oscillators. In one embodiment, an on-chip frequency compensation circuit includes a selectively enabled reliability oscillator to generate a reference oscillating signal, a clocked reliability oscillator to generate an AC degraded oscillating signal, and a static reliability oscillator to generate a DC bias degraded oscillating signal. A compare circuit coupled to the reliability oscillators compares the oscillating signals and generates a frequency compensation signal if the comparison determines that there is frequency degradation greater than a predetermined threshold.

Abstract: Embodiments of the invention include a trio of reliability oscillators. In one embodiment, an on-chip frequency compensation circuit includes a selectively enabled reliability oscillator to generate a reference oscillating signal, a clocked reliability oscillator to generate an AC degraded oscillating signal, and a static reliability oscillator to generate a DC bias degraded oscillating signal. A compare circuit coupled to the reliability oscillators compares the oscillating signals and generates a frequency compensation signal if the comparison determines that there is frequency degradation greater than a predetermined threshold.

Abstract: Embodiments of the invention include a trio of reliability oscillators. In one embodiment, an on-chip frequency compensation circuit includes a selectively enabled reliability oscillator to generate a reference oscillating signal, a clocked reliability oscillator to generate an AC degraded oscillating signal, and a static reliability oscillator to generate a DC bias degraded oscillating signal. A compare circuit coupled to the reliability oscillators compares the oscillating signals and generates a frequency compensation signal if the comparison determines that there is frequency degradation greater than a predetermined threshold.

Abstract: Embodiments of the invention include a trio of reliability oscillators. In one embodiment, an on-chip frequency compensation circuit includes a selectively enabled reliability oscillator to generate a reference oscillating signal, a clocked reliability oscillator to generate an AC degraded oscillating signal, and a static reliability oscillator to generate a DC bias degraded oscillating signal. A compare circuit coupled to the reliability oscillators compares the oscillating signals and generates a frequency compensation signal if the comparison determines that there is frequency degradation greater than a predetermined threshold.

Abstract: Embodiments of the invention include a trio of reliability oscillators. In one embodiment, an on-chip frequency compensation circuit includes a selectively enabled reliability oscillator to generate a reference oscillating signal, a clocked reliability oscillator to generate an AC degraded oscillating signal, and a static reliability oscillator to generate a DC bias degraded oscillating signal. A compare circuit coupled to the reliability oscillators compares the oscillating signals and generates a frequency compensation signal if the comparison determines that there is frequency degradation greater than a predetermined threshold.

Abstract: Embodiments of the invention include a trio of reliability oscillators. In one embodiment, an on-chip frequency compensation circuit includes a selectively enabled reliability oscillator to generate a reference oscillating signal, a clocked reliability oscillator to generate an AC degraded oscillating signal, and a static reliability oscillator to generate a DC bias degraded oscillating signal. A compare circuit coupled to the reliability oscillators compares the oscillating signals and generates a frequency compensation signal if the comparison determines that there is frequency degradation greater than a predetermined threshold.

Abstract: A method of fabricating a field effect transistor with increased resistance to hot carrier damage is disclosed. An oxide is grown on the gate electrode. This oxide is strengthened by nitridation and anneal. After a lightly doped drain implant, a second side oxide and a conformal nitride layer are deposited. Then, the conformal nitride is anisotropically etched to form spacers for masking a high dose drain implant. An NMOS transitor fabricated with this process has been found to be forty percent less susceptible to hot carrier damage than a conventional lightly doped drain process. Also, this process has proven to be more manufacturable than one in which the side oxide is nitrided and re-oxidized.

Abstract: A monitoring device to monitor process induced charge employing a single layer of polysilicon forming a floating gate. The device comprises two capacitors, one for charging and the other for discharging a floating gate of an n-channel transistor. Embodiments which permit the monitoring of positive charge, negative charge and both positive and negative charge are described. The device is reusable and lends itself to in-line monitoring as opposed to some prior art devices used for end-of-line monitoring.

Abstract: A method of fabricating a field effect transistor with increased resistance to hot carrier damage is disclosed. An oxide is grown on the gate electrode. This oxide is strengthened by nitridation and anneal. After a lightly doped drain implant, a second side oxide and a conformal nitride layer are deposited. Then, the conformal nitride is anisotropically etched to form spacers for masking a high dose drain implant. An NMOS transitor fabricated with this process has been found to be forty percent less susceptible to hot carrier damage than a conventional lightly doped drain process. Also, this process has proven to be more manufacturable than one in which the side oxide is nitrided and re-oxidized.