Abstract: A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.

Abstract: A differential MEMS-readout circuit comprises a first input bonding pad, including a first contact pin and a second contact pin. The differential MEMS-readout circuit comprises a second input bonding pad, including a first contact pin and a second contact pin; and a differential-readout amplifier section comprising a first input connected to the first contact pin of the first input bonding pad and a second input connected to the first contact pin of the second bonding pad, wherein the differential-readout amplifier section comprises a first and a second transistor circuit and each of the second contact pins of the first and second input bonding pads is coupled to one of the first and the second transistor circuits or is coupled to one of the first and the second transistor circuits and/or to ground.

Abstract: A MEMS transducer includes a first and a second differential MEMS sensor device. The first differential MEMS sensor device includes a first and a second electrode structure for providing a first differential output signal, and a third electrode structure between the first and second electrode structure. The second differential MEMS sensor device includes a first and second electrode structure for providing a second differential output signal, and a third electrode structure between the first and second electrode structure. A biasing circuit provides the third electrode structure of the first differential MEMS sensor device with a first biasing voltage and provides the third electrode structure of the second differential MEMS sensor device with a second biasing voltage. A read-out circuitry combines the first and second differential output signal in an anti-parallel manner.

Abstract: A controlled oscillator Analog-to-Digital Converter (ADC) includes an analog interface configured for receiving an analog differential input signal, and configured for providing a differential control signal; first and second controlled oscillators configured for receiving the differential control signal; and a frequency-to-digital converter having a first input coupled to an output of the first controlled oscillator, a second input coupled to an output of the second controlled oscillator, and an output for providing a digital output signal proportional to the analog differential input signal, wherein the analog interface or at least one of the first and second controlled oscillators is configured for receiving at least one disturb signal to prevent locking between the first and second controlled oscillators.

Abstract: A controlled oscillator Analog-to-Digital Converter (ADC) includes an analog interface configured for receiving an analog differential input signal, and configured for providing a differential control signal; first and second controlled oscillators configured for receiving the differential control signal; and a frequency-to-digital converter having a first input coupled to an output of the first controlled oscillator, a second input coupled to an output of the second controlled oscillator, and an output for providing a digital output signal proportional to the analog differential input signal, wherein the analog interface or at least one of the first and second controlled oscillators is configured for receiving at least one disturb signal to prevent locking between the first and second controlled oscillators.

Abstract: A MEMS transducer includes a first and a second differential MEMS sensor device. The first differential MEMS sensor device includes a first and a second electrode structure for providing a first differential output signal, and a third electrode structure between the first and second electrode structure. The second differential MEMS sensor device includes a first and second electrode structure for providing a second differential output signal, and a third electrode structure between the first and second electrode structure. A biasing circuit provides the third electrode structure of the first differential MEMS sensor device with a first biasing voltage and provides the third electrode structure of the second differential MEMS sensor device with a second biasing voltage. A read-out circuitry combines the first and second differential output signal in an anti-parallel manner.

Abstract: A MEMS component includes a MEMS sound transducer having a membrane structure and an assigned counterelectrode structure, and a circuit unit, which is electrically coupled to the MEMS sound transducer and which in a first operating mode of the MEMS sound transducer in the audio frequency range detects an audio output signal of the MEMS sound transducer on the basis of a deflection of the membrane structure relative to the counterelectrode structure, the deflection being brought about by an acoustic sound pressure change, and in a second operating mode of the MEMS sound transducer in the ultrasonic frequency range to drive and read the MEMS sound transducer as an ultrasonic transceiver.

Abstract: A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.

Abstract: A MEMS component includes a MEMS sound transducer having a membrane structure and an assigned counterelectrode structure, and a circuit unit, which is electrically coupled to the MEMS sound transducer and which in a first operating mode of the MEMS sound transducer in the audio frequency range detects an audio output signal of the MEMS sound transducer on the basis of a deflection of the membrane structure relative to the counterelectrode structure, the deflection being brought about by an acoustic sound pressure change, and in a second operating mode of the MEMS sound transducer in the ultrasonic frequency range to drive and read the MEMS sound transducer as an ultrasonic transceiver.

Abstract: A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.