Abstract: An infrared (IR) sensor includes a semiconductor material, a circular membrane and a thermopile. The semiconductor material includes a cavity surrounded by a frame. The circular membrane is positioned over the cavity and has a perimeter supported by the frame. The membrane has a first surface for receiving thermal radiation and an oppositely-disposed second surface. The membrane includes at least one infrared absorbing layer. The thermopile includes a plurality of serially connected thermocouples. Each of the thermocouples has dissimilar electrically-resistive materials that define measurement junctions, which are positioned on the membrane, and reference junctions, which are positioned on the frame.

Abstract: An infrared temperature sensing device is provided for sensing temperature of a target object. The sensing device includes a semiconductor substrate, a thermopile infrared sensor mounted to the substrate for sensing temperature of a remote target object, and temperature sensing circuitry mounted to the substrate. The temperature sensing circuitry generates a temperature dependent signal substantially linearly related to ambient temperature of the substrate. The sensing device further includes summing circuitry for generating a signal indicative of infrared sensed temperature as a function of the ambient temperature.

Abstract: An electrostatic discharge (ESD) protection device includes a first-type substrate, a second-type well formed in the substrate and a first-type well formed in the substrate. The second-type well includes a second-type+ region formed between first and second first-type+ regions. The first-type well is formed in the substrate adjacent a first side of the second-type well. The first-type well includes first and second first-type regions with a first-type+ region and a second-type+ region formed between the first and second first-type regions. The second-type+ region of the first-type well is formed between the first-type+ region of the first-type well and the second-type well.

Abstract: A method and apparatus for evaluating the functionality and sensitivity of an infrared sensor to infrared radiation. The method and apparatus are adapted for testing an infrared sensor having a diaphragm containing a heating element and a transducer that generates an output responsive to temperature. The method entails placing the infrared sensor in a controlled environment, and then exposing the diaphragm of the sensor to different levels of thermal radiation so as to obtain outputs of the transducer at different output levels. In the absence of exposure of the diaphragm to thermal radiation, flowing current through the heating element at different input levels so that the output of the transducer returns to the different output levels obtained using thermal radiation, the input difference between the input levels can be computed and used to assess the functionality and the sensitivity of the sensor.