Abstract: The present invention concerns a sensitive field effect device (100) comprising a semiconductor channel (110), a source electrode (120) connected to said semiconductor channel (110), a drain electrode (130) connected to said semiconductor channel (110), such that said semiconductor channel (110) is interposed between said source electrode (120) and said drain electrode (130), a gate electrode (140) and a dielectric layer (150) interposed between said gate electrode (140) and said semiconductor channel (110), characterized in that said semiconductor channel (110) is a layer and is made of an amorphous oxide and in that said sensor means (170, 171, 172, 173, 174, 175, 175) are configured to change the voltage between said gate electrode (140) and said source electrode (120) upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device (100).

Abstract: The present invention refers to the use and creation of materials based on natural cellulose fibbers, synthetic fibbers, or mixed fibbers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibbers of the paper material as well as metals or passive semiconductors for manufacturing drain and source allowing the interconnection of fibbers, in addition to the gate electrode contact existing on the other side-face of the paper, p or n type respectively, in monolithic or hybrid forms.

Abstract: The present invention concerns a sensitive field effect device (100) comprising a semiconductor channel (110), a source electrode (120) connected to said semiconductor channel (110), a drain electrode (130) connected to said semiconductor channel (110), such that said semiconductor channel (110) is interposed between said source electrode (120) and said drain electrode (130), a gate electrode (140) and a dielectric layer (150) interposed between said gate electrode (140) and said semiconductor channel (110), characterized in that said semiconductor channel (110) is a layer and is made of an amorphous oxide and in that said sensor means (170, 171, 172, 173, 174, 175, 175) are configured to change the voltage between said gate electrode (140) and said source electrode (120) upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device (100).

Abstract: The present invention relates to thin films comprising non-stoichiometric monoxides of: copper (OCu2)x with embedded cubic metal copper (Cucy) [(OCu2)x+(Cu1-2)y, wherein 0.05?x<1 and 0.01?y?0.9]; of tin (OSn)?x with embedded metal tin (Sn?x) [(OSn)z+(Sn1-2)w wherein 0.05?z<1 and 0.01?w?0.9]; Cucx—Sn?x alloys with embedded metal Sn and Cu [(O—Cu—Sn)a+(Cu?—Sn?)b with 0<?<2 and 0<?<2, wherein 0.05?a<1 and 0.01?b?0.9]; and of nickel (ONi)x with embedded Ni and Sn species [(O—Ni)a+(Ni?—Sn?)b with 0<?<2 and 0<?<2, wherein 0.05?a<1 and 0.01?b?0.

Abstract: High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V?1 s?1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec?1.

Abstract: The present invention refers to the use and creation of materials based on natural cellulose fibbers, synthetic fibbers, or mixed fibbers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibbers of the paper material as well as metals or passive semiconductors for manufacturing drain and source allowing the interconnection of fibbers, in addition to the gate electrode contact existing on the other side-face of the paper, p or n type respectively, in monolithic or hybrid forms.

Abstract: The present invention relates to thin films comprising non-stoichiometric monoxides of: copper (OCu2), with embedded cubic metal copper (Cucy) [(OCu2)x+(Cu1-2)y, wherein 0.05?x<1 and 0.01?y?0.9]; of tin (OSn)?x with embedded metal tin (Sn?x) [(OSn)z+(Sn1-2)w wherein 0.05?z<1 and 0.01?w?0.9]; Cucx—Sn?x alloys with embedded metal Sn and Cu [(O—Cu—Sn)a+(Cu?—Sn?)b with 0<?<2 and 0<?<2, wherein 0.05?a<1 and 0.01?b?0.9]; and of nickel (ONi)x with embedded Ni and Sn species [(O—Ni)a+(Ni?—Sn?)b with 0<?<2 and 0<?<2, wherein 0.05?a<1 and 0.01?b?0.

Abstract: High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V?1 s?1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec?1.