Abstract: A system and method for selective imaging through dual photoresist layers. The system and method includes coating a surface of the wafer with a first resist and baking the wafer to sufficiently drive out solvents in the first resist. The first resist is exposed to a first radiation source and exposing an edge of the wafer having the first resist disposed thereon to the first radiation source. The method further includes hard baking the first resist to the wafer and coating the first resist with a second resist. The method also includes baking the wafer to sufficiently drive out solvents in the second resist and exposing the second resist to a second radiation source. The method also includes exposing select portions of the edge of the wafer having the second resist disposed thereon to the second radiation source and hard baking the second resist to the wafer.

Abstract: A method for haze control on a semiconductor reticle, the method including performing a reticle inspection of a semiconductor reticle to detect haze formation on a periodic basis, performing a wafer inspection to detect haze defects, forecasting haze formation, and cleaning the semiconductor reticle. Also included is a haze forecasting method for haze control on a semiconductor reticle, including scanning a plurality of semiconductor wafers, identifying repeating defects in the semiconductor wafers, storing the repeating defects in a database as known repeating defects, and identifying an additional repeating defect that is not a known repeating defect, the additional repeating defect caused by semiconductor reticle haze.

Abstract: A system and method for selective imaging through dual photoresist layers. The system and method includes coating a surface of the wafer with a first resist and baking the wafer to sufficiently drive out solvents in the first resist. The first resist is exposed to a first radiation source and exposing an edge of the wafer having the first resist disposed thereon to the first radiation source. The method further includes hard baking the first resist to the wafer and coating the first resist with a second resist. The method also includes baking the wafer to sufficiently drive out solvents in the second resist and exposing the second resist to a second radiation source. The method also includes exposing select portions of the edge of the wafer having the second resist disposed thereon to the second radiation source and hard baking the second resist to the wafer.

Abstract: A method for haze control on a semiconductor reticle, the method including performing a reticle inspection of a semiconductor reticle to detect haze formation on a periodic basis, performing a wafer inspection to detect haze defects, forecasting haze formation, and cleaning the semiconductor reticle. Also included is a haze forecasting method for haze control on a semiconductor reticle, including scanning a plurality of semiconductor wafers, identifying repeating defects in the semiconductor wafers, storing the repeating defects in a database as known repeating defects, and identifying an additional repeating defect that is not a known repeating defect, the additional repeating defect caused by semiconductor reticle haze.