Abstract: A memory cell structure includes a transistor structure and a capacitor structure, where the capacitor structure includes a hydrogen absorption layer. The hydrogen absorption layer absorbs hydrogen, which prevents or reduces the likelihood of the hydrogen diffusing into an underlying metal-oxide channel of the transistor structure. In this way, the hydrogen absorption layer minimizes and/or reduces the likelihood of hydrogen contamination in the metal-oxide channel, which may enable a low current leakage to be achieved for the memory cell structure and reduces the likelihood of data corruption and/or failure of the memory cell structure, among other examples.

Abstract: A method for manufacturing an optoelectronic structure and a package structure are provided. The method includes providing a substrate and a light source module and a photonic component over the substrate; and adjusting a lens structure to a unit specific position related to the substrate to couple an optical signal from the light source module to the photonic component.

Abstract: Non-planar I/O and logic semiconductor devices having different workfunctions on common substrates and methods of fabricating non-planar I/O and logic semiconductor devices having different workfunctions on common substrates are described. For example, a semiconductor structure includes a first semiconductor device disposed above a substrate. The first semiconductor device has a conductivity type and includes a gate electrode having a first workfunction. The semiconductor structure also includes a second semiconductor device disposed above the substrate. The second semiconductor device has the conductivity type and includes a gate electrode having a second, different, workfunction.

Abstract: A display device includes a substrate, an insulating layer and a metal layer. The substrate includes a light transmitting region. The insulating layer is disposed on the substrate and between the substrate and the metal layer. An edge of the insulating layer has a concave corner, and the concave corner is recessed toward the metal layer and located in the light transmitting region. A manufacturing method of the display device is also proposed.

Abstract: An adjustable cable clip is disclosed. The cable clip includes a base, a first strap, and a second strap. The first strap is coupled to the base. The first strap has a first interior surface, a first exterior surface opposing the first interior surface, and an aperture. The second strap is coupled to the base opposite from the first strap. The second strap has a second interior surface, a second exterior surface opposing the second interior surface, and a projection. The first strap and the second strap are configured to couple together to form a cable area by the projection coupling with the aperture such that the first interior surface touches the second exterior surface or the first exterior surface touches the second interior surface.

Abstract: An array substrate, a display panel and a manufacturing method thereof are provided. The array substrate includes data lines, gate lines, a gate driving structure electrically connected with the gate lines and the gate driving signal lines, gate driving signal lines and a data fanout wiring region. The array substrate further includes a dummy fanout wiring region, a dummy pad region and a bended line, the data fanout wiring region and the dummy fanout wiring region are located at both sides of the display region, the data lines are electrically connected with pads in the dummy pad region through the wires in the dummy fanout wiring region; the gate driving signal lines are electrically connected with pads in the dummy pad region; a transmission line is disposed at one side of the gate driving structure away from the display region and electrically connected with the bended line.

Abstract: A power tool includes a locking mechanism for locking the output shaft when the output shaft transmits torque to the motor shaft. The locking mechanism includes a shaft lock bracket connected to the output shaft to drive the output shaft; and a damping assembly including a first mounting portion connected to the output shaft, a second mounting portion connected to the shaft lock bracket, and a buffer part. The buffer part connects the first mounting portion to the second mounting portion. When the output shaft and the shaft lock bracket move relative to each other, the buffer part undergoes the torsional deformation to provide a buffer force that delays the movement of the output shaft relative to the shaft lock bracket.

Abstract: A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die to form a reconstituted wafer. A first insulating layer is formed over the reconstituted wafer. A first dummy opening is formed in the first insulating layer. A first conductive layer is formed on the first insulating layer including a first contact pad over the first dummy opening.

Abstract: A quick installation structure for a sunroom and a sunroom are provided, where the quick installation structure includes: a connecting rod; a crossbeam providing with a first connecting unit and a second connecting unit; a connector connected to the connecting rod and including a locking portion, a pushing portion, and an actuating portion. The pushing portion matches with the locking portion, the actuating portion is connected to the locking portion and controls its movement. The locking portion is subjected by the pushing portion during movement and switches between a first state and a second state; the first connecting unit and the second connecting unit are extended to two sides of the crossbeam, both the first connecting unit and the second connecting unit include a connecting portion, which includes a first wall portion and a second wall portion.

Abstract: A method includes forming a fin extending from a substrate; depositing a liner over a top surface and sidewalls of the fin, where the minimum thickness of the liner is dependent on selected according to a first germanium concentration of the fin; forming a shallow trench isolation (STI) region adjacent the fin; removing a first portion of the liner on sidewalls of the fin, the first portion of the liner being above a topmost surface of the STI region; and forming a gate stack on sidewalls and a top surface of the fin, where the gate stack is in physical contact with the liner.

Abstract: A new transistor structure for use with III-Nitride semiconductor structures is disclosed. This transistor adds a top cap layer, etch stop layer and bottom cap layer between the gate electrode and the barrier layer. This structure enables a fabrication process in which the barrier layer is not subjected to plasma etching, which is a cause of etch related variations. In some embodiments, the bottom cap layer and optionally the etch stop layer extend from the source electrode to the drain electrode. A gate dielectric layer may optionally be included between the gate electrode and the top cap layer.

Abstract: The present disclosure provides for polypeptide conjugates. The polypeptide conjugates disclosed herein comprise a polyarginine peptide and a cyclic cell-penetrating peptide (cCPP) conjugated, directly or indirectly, to the polyarginine peptide. The present disclosure demonstrates that cCPPs conjugated to polyarginine peptides can be used to deliver nucleic acids to the cytosol of cells.

Abstract: The present invention relates to a cell differentiation medium composition, a high secretion insulin-producing cells and a preparation method thereof. The high secretion insulin-producing cells obtained by using the cell differentiation medium composition to induce stem cell differentiated under specific conditions can secrete a large amount of insulin in a short time, and when the high-secreting insulin-producing cells are transplanted into the human body, they are not easy to be swallowed by macrophages, which can improve the survival rate of the insulin-producing cells and prolong the time of insulin secretion thereby.

Abstract: Provided are systems and methods for the automatic generation of support videos from a source video. For example, the support video can more deeply explain or elaborate upon content included in source video. In particular, a computing system can obtain a source video and extract one or more sets of textual content associated with the source video. For example, the sets of textual content can include a transcript of speech that occurs within the source video. The computing system can process the one or more sets of textual content with a generative sequence processing model to generate, as an output of the generative sequence processing model, additional textual content for a support video.

Abstract: A device and a method to detect unauthorized opening of a casing is disposed in the upper or lower casing of an apparatus. The device includes a base plate with vibrator, carrier, and sensor on the lower case, and receiving grooves. Balls of a lesser number than the number of receiving grooves are installed in the grooves in a predetermined arrangement by the manufacturer. A waveguide element and magnet, fixed on the upper casing, is in contact with the balls, and when the waveguide is vibrated, the number and locations of the balls govern the form of a setting signal derived therefrom at the factory. If the upper casing is separated from the lower casing, the waveguide element separates from the carrier, the magnetic element gathers the balls, the predetermined arrangement being thereby lost, when tested by an authorized repair engineer.

Abstract: A time series anomaly detection method, system, and computer program product that processes time series data includes absorbing profiles of the time series data and anomaly types of a model as features, optimizing biased ranks to create optimized ranks through merging initial ranks with new ranks generated by real anomalies, and auto-suggesting the optimized ranks for saving a predetermined amount of data operation.

Abstract: A semiconductor manufacturing system includes: a nozzle including a first channel that allows a fluid to flow through; a light source configured to emit light; and a light sensor configured to receive light, the light source and the light sensor being disposed within the first channel and opposite to each other. The semiconductor manufacturing system is configured to: emit light, by the light source, from within the nozzle toward a surface while the nozzle is dispensing the fluid; receive the light reflected from the surface by the light sensor, the emitted light and the reflected light adapted to be contained within the fluid; and examine a status of the reflected light. The emitted light and the reflected light propagate in a direction parallel to a longitudinal axis of the first channel.

Abstract: A qubit mapping method is performed by a computer device. The method includes: obtaining a coupling graph corresponding to a quantum device, each vertex in the coupling graph representing one qubit in the quantum device, an edge between two vertexes representing that a two-qubit gate is allowed to directly act on qubits corresponding to the two vertexes; generating at least two connected subgraphs based on the coupling graph, a quantity of vertexes of each connected subgraph being greater than or equal to 2 and less than or equal to a routing number of the coupling graph, and a sum of quantities of vertexes of the at least two connected subgraphs being equal to a constant multiple of a quantity of vertexes of the coupling graph; and performing qubit mapping on a logic circuit based on the at least two connected subgraphs, to obtain a corresponding hardware compilable circuit.