Abstract: The present application discloses a semiconductor device. The semiconductor device includes a package structure including a first side and a second side opposite to the first side; an interposer structure positioned over the first side of the package structure; a first die positioned over the interposer structure; a second die positioned over the interposer structure; and a plurality of middle interconnectors positioned between the first side of the package structure and the first die and between the first side of the package structure and the second die. The plurality of middle interconnectors respectively includes a middle exterior layer positioned between the first side of the package structure and the interposer structure, a middle interior layer enclosed by the middle exterior layer, and a cavity enclosed by the interposer structure, the package structure, and the middle interior layer.

Abstract: An infrared sensor includes a substrate, a first electrode, a light-sensing unit, and a second electrode. The substrate is infrared-transmissible. The first electrode is disposed on a surface of the substrate and is infrared-transmissible. The light-sensing unit is disposed on a surface of the first electrode opposite to the substrate, is capable of absorbing and sensing infrared light, and includes a zinc oxide (ZnO)-based layer, a first lead sulfide (PbS)-based modification layer, and a second PbS-based modification layer that are sequentially stacked from the surface of the first electrode. The first PbS-based modification layer includes halide ion-modified PbS, and the second PbS-based modification layer includes thiol-modified PbS. In addition, the second electrode is disposed on a surface of the light-sensing unit opposite to the substrate, and is capable of forming a current flow path by cooperating with the light-sensing unit and the first electrode.

Abstract: Disclosed is a method for training an expression transfer model performed by a computer device, the method including: obtaining a source domain facial image of a first object, a target domain facial image of a second object and a facial feature image associated with the target domain facial image; applying the facial feature image and the source domain facial image to an expression transfer model to obtain a synthesized facial image of the first object; applying the synthesized facial image and the target domain facial image to a discriminative network model obtain two discrimination results; applying the synthesized facial image and the target domain facial image to an image classification model to obtain a category feature vector for identifying a difference between the synthesized facial image and the target domain facial image; and updating the expression transfer model according to the category feature vector and the discrimination results.

Abstract: A pellicle including a pellicle membrane with improved stability to hydrogen plasma is provided. The pellicle membrane includes a plurality of carbon nanotubes (CNTs), where at least one carbon nanotube (CNT) of the plurality of CNTs is coated by a protection coating. The protection coating includes a plurality of nanostructures that includes a transition metal or an oxide, nitride, silicide or carbide thereof on a surface of the at least one CNT of the plurality of CNTs, a carbon-based diffusion barrier layer over at least the plurality of nanostructures, and a capping layer over at least the carbon-based diffusion barrier layer. The pellicle further includes a pellicle border attached to the pellicle membrane along a peripheral region of the pellicle membrane and a pellicle frame attached to the pellicle border.

Abstract: An EUV lithography mask including a substrate, a patterned absorber layer including an alloy of rhodium. In some embodiments, the alloy of rhodium includes a group 5, group 6, group 9, group 10, or group 11 transition metal having a specific EUV refractive index and a specific EUV extinction coefficient. The disclosed EUV lithography masks reduce undesirable mask 3D effects.

Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.

Abstract: A method for forming a pellicle for an extreme ultraviolet lithography is provided. The method includes forming a pellicle membrane over a filter membrane and transferring the pellicle membrane from the filter membrane to a membrane border. Forming the pellicle membrane includes growing carbon nanotubes (CNTs) from in-situ formed metal catalyst particles in a first reaction zone of a reactor, each of the CNTs including a metal catalyst particle at a growing tip thereof, growing boron nitride nanotubes (BNNTs) to surround individual CNTs in a second reaction zone of the reactor downstream of the first reaction zone, thereby forming heterostructure nanotubes each including a CNT core and a BNNT shell, and collecting the heterostructure nanotubes on the filter membrane. The metal catalyst particles are partially or completely removed during growing the BNNTs.

Abstract: The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.

Abstract: A reticle carrier includes an inner pod, a first auxiliary structure, and an outer pod. The inner pod is configured to receive a reticle. The inner pod comprises an inner baseplate and an inner cover plate, and an inner surface of the inner baseplate and an inner surface of the inner cover plate face each other. The first auxiliary structure is on one of the inner surface of the inner baseplate and the inner surface of the inner cover plate. The first auxiliary structure includes a raised structure and a contact pattern on the raised structure, and the contact pattern includes a plurality of parallel strips. The outer pod houses the inner pod.

Abstract: An embodiment of this application discloses an artificial intelligence-based image generation method performed by a computer device. The method includes: acquiring a source image including a target object whose pose is to be transformed, and a target image including a reference object presenting a target pose; determining a pose transition matrix according to a model pose corresponding to the pose of the target object and a model pose corresponding to the target pose of the reference object; extracting a basic appearance feature of the target object from the source image; processing the basic appearance feature based on the pose transition matrix, to obtain a target appearance feature of the target object in the target pose; and generating a target synthetic image of the target object in the target pose based on the target appearance feature.

Abstract: A light modulation module, including a liquid crystal on silicon (LCoS) display panel and a temperature adjustment module, is provided. The LCoS display panel is disposed on a transmission path of an illumination beam and is configured to modulate the illumination beam. The LCoS display panel is disposed in the temperature adjustment module, which includes a temperature sensing element and a temperature control element. The temperature sensing element is disposed next to the LCoS display panel and is configured to sense an ambient temperature of the LCoS display panel. The temperature control element is disposed next to the LCoS display panel and is coupled to the temperature sensing element. The temperature control element controls a temperature of the LCoS display panel according to the ambient temperature. A reflective projection device is also provided, which is applied with the light modulation module and has good reliability and good projection quality.

Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.

Abstract: The present disclosure provides a method for preventing and/or repairing ocular cell damage by using a Streptococcus thermophilus iHA318 strain and its metabolites.

Abstract: An extreme ultraviolet (EUV) mask and method of forming an EUV mask are provided. The method includes forming a mask layer on a semiconductor wafer, generating extreme ultraviolet (EUV) light by a lithography exposure system, forming patterned EUV light by patterning the EUV light by a mask including an absorber having extinction coefficient at an EUV wavelength that exceeds extinction coefficients of TaBN and TaN at the EUV wavelength, and exposing the mask layer by the patterned EUV light.

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.

Abstract: An image processing method and apparatus, a device, and a storage medium. The image processing method includes: performing preliminary segmentation recognition on a raw image by using a first segmentation model to obtain a candidate foreground image region and a candidate background image region of the raw image; recombining the candidate foreground image region, the candidate background image region, and the raw image to obtain a recombined image, pixels in the recombined image being in a one-to-one correspondence with pixels in the raw image; and performing region segmentation recognition on the recombined image by using a second segmentation model to obtain a target foreground image region and a target background image region of the raw image.